ZXMC4559DN8(2) [ETC]
;
ETC 
ZXMC4559DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.5A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SO8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
Motor Drive
LCD backlighting
Q1 = N-CHANNEL
Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMC4559DN8TA
ZXMC4559DN8TC
7’‘
12mm
12mm
500 units
PINOUT
13’‘
2500 units
DEVICE MARKING
ZXMC
4559
Top view
ISSUE 1 - SEPTEMBER 2002
1
ZXMC4559DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL N-Channel P-Channel
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
60
-60
V
V
DSS
GS
Ϯ20
Ϯ20
Continuous Drain Current@V =10V; T =25ЊC (b)(d)
GS
I
4.7
3.7
3.6
-3.5
-2.8
-2.6
A
A
A
D
@V =10V; T =25ЊC (b)(d)
GS
A
@V =10V; T =25ЊC (a)(d)
GS
A
Pulsed Drain Current (c)
I
I
I
17
3.4
17
-12.6
-3.2
A
A
A
DM
S
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
-12.6
SM
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
P
P
P
1.25
10
W
D
D
D
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
1.8
14
W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
100
69
UNIT
°C/W
°C/W
°C/W
Junction to Ambient (a)(d)
Junction to Ambient (b)(e)
Junction to Ambient (b)(d)
Notes
R
R
R
θJA
θJA
θJA
58
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a device with one active die.
(e) For device with 2 active die running at equal power.
ISSUE 1 - SEPTEMBER 2002
2
ZXMC4559DN8
CHARACTERISTICS
RDS(ON)
Limited
RDS(ON)
Limited
10
1
10
1
DC
DC
1s
100ms
1s
100ms
10ms
1ms
100m
100m
10ms
1ms
Note (a)(f)
Note (a)(f)
100us
10
100us
10m
10m
Single Pulse, Tamb=25°C
1
Single Pulse, Tamb=25°C
1
0.1
10
100
0.1
100
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
2.0
1.5
1.0
0.5
0.0
100
80
60
40
20
0
Two active die
Oneactivedie
D=0.5
Single Pulse
D=0.2
D=0.05
D=0.1
100µ 1m 10m 100m
1
10 100 1k
0
25
50
75
100 125 150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
Single Pulse
T
amb=25°C
100
10
1
100µ 1m 10m 100m
1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ISSUE 1 - SEPTEMBER 2002
3
ZXMC4559DN8
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
60
V
A
nA
V
I
=250µA, V =0V
GS
(BR)DSS
D
I
I
1.0
V
=60V, V =0V
DS GS
DSS
GSS
100
V
=Ϯ20V, V =0V
DS
GS
Gate-Source Threshold Voltage
V
R
1.0
I
=250A, V = V
GS
GS(th)
DS(on)
DS
D
Static Drain-Source On-State Resistance
(1)
0.055
0.075
V
V
=10V, I =4.5A
⍀
⍀
GS
GS
D
=4.5V, I =4.0A
D
Forward Transconductance (1)(3)
DYNAMIC (3)
g
10.2
S
V
=15V,I =4.5A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
1063
104
64
pF
pF
pF
iss
V
=30V, V =0V,
GS
DS
oss
rss
f=1MHz
t
t
t
t
3.8
4.0
ns
ns
ns
ns
nC
d(on)
r
V
R
=30V, I =1A
D
DD
G
Turn-Off Delay Time
Fall Time
26.2
10.6
11.0
6.0Ω, V =10V
d(off)
f
GS
Gate Charge
Q
V
=30V,V =5V,
GS
g
DS
ID=4.5A
Total Gate Charge
Q
Q
Q
20.4
4.1
nC
nC
nC
g
V
=30V,V =10V,
GS
DS
ID=4.5A
Gate-Source Charge
Gate-Drain Charge
gs
gd
5.1
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
0.85
1.2
V
T =25°C, I =5.5A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
22
ns
T =25°C, I =2.2A,
J F
di/dt= 100A/s
rr
Q
21.4
nC
rr
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - SEPTEMBER 2002
4
ZXMC4559DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
-60
V
A
nA
V
I
=-250µA, V =0V
GS
(BR)DSS
D
I
I
-1.0
100
V
=-60V, V =0V
DS GS
DSS
GSS
V
=Ϯ20V, V =0V
DS
GS
Gate-Source Threshold Voltage
V
R
-0.8
I
=-250A, V = V
DS
GS(th)
DS(on)
GS
D
Static Drain-Source On-State Resistance
(1)
0.105
0.135
V
V
=-10V, I =-3.5A
D
=-4.5V, I =-3.1A
D
⍀
⍀
GS
GS
Forward Transconductance (1)(3)
DYNAMIC (3)
g
7.8
S
V
=-15V,I =-3.5A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
1021
83.1
56.4
pF
pF
pF
iss
V
=-30 V, V =0V,
GS
DS
oss
rss
f=1MHz
t
t
t
t
2.33
13.5
25.1
15.4
12.2
ns
ns
ns
ns
nC
d(on)
V
R
=-30V, I =-1A
D
6.0Ω, V =-10V
GS
r
DD
G
Turn-Off Delay Time
Fall Time
d(off)
f
Gate Charge
Q
V
=-30V,V =-5V,
GS
=-3.5A
g
DS
I
D
Total Gate Charge
Q
Q
Q
24.3
2.7
nC
nC
nC
g
V
D
=-30V,V =-10V,
GS
DS
=-3.5A
Gate-Source Charge
Gate-Drain Charge
gs
gd
I
3.8
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
-0.85
-0.95
V
T =25°C, I =-3.4A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
29.2
39.6
ns
T =25°C, I =-2A,
J F
di/dt= 100A/µs
rr
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - SEPTEMBER 2002
5
ZXMC4559DN8
N-CHANNEL TYPICAL CHARACTERISTICS
10V
T = 150°C
T = 25°C
4.5V
4.5V
4V
10V
10
1
10
1
4V
3.5V
3.5V
3V
3V
2.5V
VGS
0.1
0.01
0.1
0.01
VGS
2V
2.5V
0.1
1
10
0.1
1
10
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10V
IDG=S 4.5A
10
1
T = 150°C
RDS(on)
VGS(th)
T = 25°C
VDS = 10V
0.1
0.01
V
=VDS
IDG=S 250uA
2
3
4
5
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
100
2.5V
1000
100
10
T = 25°C
T = 150°C
VGS
3V
10
1
3.5V
T = 25°C
4V
4.5V
1
0.1
0.01
10V
0.1
0.01
0.2
0.6
0.8
1.0
1.2
V0.4Source-Drain Voltage (V)
0.01
0.1
1
10
ID Drain Current (A)
SD
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
ISSUE 1 - SEPTEMBER 2002
6
ZXMC4559DN8
N-CHANNEL TYPICAL CHARACTERISTICS
1600
1400
1200
1000
800
600
400
200
0
10
VGS =0V
f =1MHz
ID =4.5A
8
6
4
2
0
C
ISS
COSS
C
RSS
VDS = 30V
0.1
1
10
0
5
10
15
20
25
VDS - Drain- SourceVoltage(V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
ISSUE 1 - SEPTEMBER 2002
7
ZXMC4559DN8
P-CHANNEL TYPICAL CHARACTERISTICS
10V
10V
T = 150°C
4.5V
T = 25°C
4.5V
3.5V
3V
3.5V
10
1
10
3V
2.5V
2.5V
1
2V
-VGS
-VGS
2V
0.1
0.01
0.1
1.5V
0.01
0.1
1
10
0.1
1
10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= -10V
IDG=S - 3.5A
10
1
RDS(on)
T = 150°C
VGS(th)
T = 25°C
V
=VDS
IDG=S -250uA
-VDS = 10V
0.1
1
2
3
4
-50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
2.5V
T = 25°C
10
-VGS
3V
10
1
T = 150°C
1
0.1
3.5V
4V
T = 25°C
4.5V
10V
0.1
0.01
0.0-V 0.2Source-Drain Voltage (V)1.2
0.4 0.6 0.8 1.0
0.1
1
10
-ID Drain Current (A)
SD
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - SEPTEMBER 2002
8
ZXMC4559DN8
P-CHANNEL TYPICAL CHARACTERISTICS
10
1400
1200
1000
800
600
400
200
0
VGS =0V
f =1MHz
ID = -3.5A
8
6
4
2
0
C
ISS
COSS
C
RSS
VDS = -30V
0.1
1
10
0
5
10
15
20
25
-VDS - Drain- SourceVoltage(V)
Capacitance v Drain-Source Voltage
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
ISSUE 1 - SEPTEMBER 2002
9
ZXMC4559DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
MIN
MILLIMETRES
DIM
MAX
0.069
0.010
0.197
0.244
0.157
0.050
MIN
1.35
0.10
4.80
5.80
3.80
0.40
MAX
1.75
0.25
5.00
6.20
4.00
1.27
A
A1
D
H
E
0.053
0.004
0.189
0.228
0.150
0.016
L
e
0.050 BSC
1.27 BSC
b
0.013
0.008
0Њ
0.020
0.010
8Њ
0.33
0.19
0Њ
0.51
0.25
8Њ
c
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
⍜
h
0.010
0.020
0.25
0.50
© Zetex plc 2002
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Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
uk.sales@zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
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3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Germany
USA
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (631) 360 2222
Fax: (631) 360 8222
usa.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - SEPTEMBER 2002
10
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