ZXMC4A16DN8 [DIODES]
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET; 互补40V增强型MOSFET
| 型号： | ZXMC4A16DN8 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET |
| 文件： | 总10页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMC4A16DN8
COMPLEMENTARY 40V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2A
P-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7A
DESCRIPTION
This new generation of trench MOSFETs from Zetex
utilises a unique structure that com bines the benefits
of low on-resistance with fast switching speed. This
m akes them ideal for high efficiency, low voltage,
power m anagem ent applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor drive
• LCD backlighting
ORDERING INFORMATION
DEVICE
REEL
S IZE
QUANTITY PER
REEL
TAPE WIDTH
PINOUT
7”
12m m
12m m
500
ZXMC4A16DN8TA
ZXMC4A16DN8TC
13”
2,500
DEVICE MARKING
• ZXMC
4A16
TOP VIEW
ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
1
ZXMC4A16DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
N-channel
40
P-channe|
-40
UNIT
V
Dra in -s o u rce vo lta g e
V
V
DS S
GS
Ga te -s o u rce vo lta g e
Ϯ20
Ϯ20
V
Co n tin u o u s d ra in cu rre n t
I
D
(b )(d )
(b )(d )
(a )(d )
(V = 10V; T =25°C)
5.2
4.1
4.0
-4.7
-3.8
-3.6
A
A
A
GS
A
(V = 10V; T =70°C)
GS
A
(V = 10V; T =25°C)
GS
(c)
A
Pu ls e d d ra in cu rre n t
I
I
I
24
2.5
24
-23
2.3
23
A
A
A
DM
(b )
Co n tin u o u s s o u rce cu rre n t (b o d y d io d e )
S
(c)
Pu ls e d s o u rce cu rre n t (b o d y d io d e )
S M
(a ) (d )
Po w e r d is s ip a tio n a t T =25°C
A
P
P
P
1.25
10
W
D
D
D
Lin e a r d e ra tin g fa cto r
m W/°C
(a ) (e )
(b ) (d )
Po w e r d is s ip a tio n a t T =25°C
A
1.8
14
W
Lin e a r d e ra tin g fa cto r
m W/°C
Po w e r d is s ip a tio n a t T =25°C
A
2.1
17
W
Lin e a r d e ra tin g fa cto r
m W/°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T , T
-55 to +150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
100
70
UNIT
(a ) (d )
J u n ctio n to a m b ie n t
R
R
R
°C/W
°C/W
°C/W
⍜J A
⍜J A
⍜J A
(a ) (e )
J u n ctio n to a m b ie n t
(b ) (d )
J u n ctio n to a m b ie n t
60
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface m ounted on FR4 PCB m easured at t Յ 10 sec.
(c) Repetitive rating - pulse width lim ited by m axim um junction tem perature. Pulse width 300us, d<= 0.02. Refer to Transient Therm al Im pedance
graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
2
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
3
ZXMC4A16DN8
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
40
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DS S
I
I
0.5
V
=40V, V =0V
GS
DS S
DS
GS
100
V
=±20V, V =0V
DS
GS S
Ga te -S o u rce Th re s h o ld Vo lta g e
Static Drain-Source On-State Resistance
V
R
1.0
I = 250m A, V =V
D DS GS
GS (th )
(1)
0.050
0.075
⍀
V
= 10V, I = 4.5A
D
DS (o n )
GS
V
V
= 4.5V, I = 3.2A
D
GS
(1) (3)
Fo rw a rd Tra n s co n d u cta n ce
g
8.6
S
= 15V, I = 4.5A
D
fs
DS
(3)
DYNAMIC
In p u t Ca p a cita n ce
Cis s
Co s s
Crs s
770
92
pF
pF
pF
V
= 40V, V =0V
GS
DS
Ou tp u t Ca p a cita n ce
f=1MHz
Re ve rs e Tra n s fe r Ca p a cita n ce
61
(2) (3)
S WITCHING
Tu rn -On -De la y Tim e
Ris e Tim e
td (o n )
tr
3.3
4.7
29
ns
ns
V
R
= 30V, I = 1A
D
DD
Tu rn -Off De la y Tim e
Fa ll Tim e
td (o ff)
tf
ns
≅6.0⍀, V = 10V
G
GS
14
ns
To ta l Ga te Ch a rg e
Ga te -S o u rce Ch a rg e
Ga te Dra in Ch a rg e
S OURCE-DRAIN DIODE
Qg
17
nC
nC
nC
Qg s
Qg d
2.5
3.8
V
= 30V, V = 10V
GS
DS
I = 4.5A
D
(1)
Dio d e Fo rw a rd Vo lta g e
VS D
0.8
0.95
V
T =25°C, I = 4.5A,
j S
V
=0V
GS
(3)
Re ve rs e Re co ve ry Tim e
trr
20
16
ns
T =25°C, I = 2.5A,
j
S
(3)
d i/d t=100A/s
Re ve rs e Re co ve ry Ch a rg e
Qrr
nC
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
4
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
5
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
6
ZXMC4A16DN8
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
-40
V
I = -250A, V =0V
D GS
(BR)DS S
I
I
-1.0
100
A
nA
V
V
= -40V, V =0V
GS
DS S
DS
GS
V
=±20V, V =0V
DS
GS S
Ga te -S o u rce Th re s h o ld Vo lta g e
Static Drain-Source On-State Resistance
V
R
-1.0
I = -250A, V =V
D DS GS
GS (th )
(1)
0.060
0.100
⍀
V
= -10V, I = -3.8A
D
DS (o n )
GS
V
V
= -4.5V, I = -2.9A
D
GS
(1) (3)
Fo rw a rd Tra n s co n d u cta n ce
g
6.8
S
= -15V, I = -3.8A
D
fs
DS
(3)
DYNAMIC
In p u t Ca p a cita n ce
C
C
C
1000
180
pF
pF
pF
is s
V
= -20V, V =0V
GS
DS
Ou tp u t Ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e Tra n s fe r Ca p a cita n ce
160
(2) (3)
S WITCHING
Tu rn -On -De la y Tim e
Ris e Tim e
t
t
t
t
3.7
5.5
33
ns
ns
ns
ns
nC
d (o n )
V
R
= -20V, I = -1A
D
r
DD
≅ 6.0⍀, V = 10V
Tu rn -Off De la y Tim e
Fa ll Tim e
G
GS
d (o ff)
f
18
Ga te Ch a rg e
Q
15
V
= -20V, V = -5V
g
DS GS
I = -3.8A
D
To ta l Ga te Ch a rg e
Q
Q
Q
26
3.2
7.3
nC
nC
nC
g
V
= -20V, V = -10V
GS
DS
Ga te -S o u rce Ch a rg e
Ga te Dra in Ch a rg e
S OURCE-DRAIN DIODE
g s
g d
I = -3.8A
D
(1)
Dio d e Fo rw a rd Vo lta g e
V
t
-0.86 -0.95
V
T =25°C, I = -3.4A,
j S
S D
V
=0V
GS
(3)
Re ve rs e Re co ve ry Tim e
27
25
ns
T =25°C, I = -3A,
rr
j
S
(3)
d i/d t=100A/s
Re ve rs e Re co ve ry Ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
7
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
8
ZXMC4A16DN8
TYPICAL CHARACTERISTICS
ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
9
ZXMC4A16DN8
PACKAGE OUTLINE
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim eters
Inches
Min
Millim eters
Min Max
1.27 BSC
Inches
Min Max
0.050 BSC
DIM
DIM
Min
1.35
0.10
4.80
5.80
3.80
0.40
Max
Max
0.069
0.010
0.197
0.244
0.157
0.050
A
A1
D
1.75
0.25
5.00
6.20
4.00
1.27
0.053
0.004
0.189
0.228
0.150
0.016
e
b
c
0.33
0.19
0°
0.51
0.25
8°
0.013
0.020
0.010
8°
0.008
0°
H
⍜
h
-
E
0.25
-
0.50
-
0.010
-
0.020
-
L
© Zetex Sem iconductors plc 2004
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ISSUE 1 - NOVEMBER 2004
S E M IC O N D U C T O R S
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