ZXMC3AMC [DIODES]
30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET; 30V互补对增强型MOSFET
| 型号： | ZXMC3AMC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总11页 (文件大小：736K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
ZXMC3AMC
30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
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Low profile package, for thin applications
Low RθJA, thermally efficient package
6mm2 footprint, 50% smaller than TSOP6 and SOT23-6
Low on-resistance
ID max
Device
V(BR)DSS
RDS(on) max
TA = 25°C
(Notes 4 & 7)
Fast switching speed
3.7A
3.0A
120mΩ @ VGS = 10V
180mΩ @ VGS = 4.5V
210mΩ @ VGS = -10V
330mΩ @ VGS = -4.5V
Q1
Q2
30V
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
-2.7A
-2.2A
-30V
Mechanical Data
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Case: DFN3020B-8
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Terminals: Pre-Plated NiPdAu leadframe
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
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MOSFET gate drive
LCD backlight inverters
Motor control
Portable applications
DFN3020B-8
D1
D2
D2
D2
D1
D1
G1
G2
D1
D2
S1
S2
G2 S2
G1 S1
Q1 N-Channel
Q2 P-Channel
Pin 1
Top View
Bottom View
Bottom View
Pin-Out
Equivalent Circuit
Ordering Information (Note 3)
Part Number
ZXMC3AMCTA
Marking
C01
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
C01 = Product Type Marking Code
Top view, Dot Denotes Pin 1
C01
1 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
N-channel – Q1 P-channel – Q2
Unit
-30
±20
-2.7
-2.2
-2.1
-9.2
-2.8
-9.2
30
±20
3.7
3.0
2.9
13
V
Gate-Source Voltage
VGSS
(Notes 4 & 7)
Continuous Drain Current
V
V
GS = 10V TA = 70°C (Notes 4 & 7)
(Notes 3 & 7)
ID
A
Pulsed Drain Current
(Notes 6 & 7)
(Notes 4 & 7)
(Notes 6 & 7)
GS = 10V
IDM
IS
Continuous Source Current (Body diode)
Pulse Source Current (Body diode)
3.2
13
ISM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
N-channel – Q1 P-channel – Q2
Unit
1.50
12
(Notes 3 & 7)
2.45
19.6
1.13
9
(Notes 4 & 7)
Power Dissipation
Linear Derating Factor
W
mW/°C
PD
(Notes 5 & 7)
1.70
13.6
83.3
51.0
111
73.5
(Notes 5 & 8)
(Notes 3 & 7)
(Notes 4 & 7)
Thermal Resistance, Junction to Ambient
(Notes 5 & 7)
RθJA
°C/W
°C
(Notes 5 & 8)
(Notes 7 & 9)
Thermal Resistance, Junction to Lead
17.1
RθJL
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Notes:
3. For a device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.
4. Same as note (3) except the device is measured at t < 5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
2 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
Thermal Characteristics
RDS(ON)
RDS(ON)
10
1
10
Limited
Limited
1
DC
1s
DC
1s
100ms
100ms
100m
100m
10m
10ms
10ms
1ms
8 sq cm 2oz Cu
One active die
8 sq cm 2oz Cu
One active die
Single Pulse, Tamb=25°C
1ms
100us
10
100us
10
Single Pulse, Tamb=25°C
10m
1
1
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
P-channel Safe Operating Area
N-channel Safe Operating Area
90
2.0
10 sq cm 1oz Cu
Two active die
8 sq cm 2oz Cu
One active die
80
1.5
1.0
0.5
0.0
8 sq cm 2oz Cu
One active die
60
D=0.5
40
10 sq cm 1oz Cu
One active die
Single Pulse
D=0.05
D=0.1
D=0.2
20
0
100µ 1m 10m 100m
1
10
100
1k
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Derating Curve
Transient Thermal Impedance
3.5
225
200
175
150
125
100
75
Tamb=25°C
Tj max=150°C
Continuous
2oz Cu
Two active die
1oz Cu
One active die
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1oz Cu
Two active die
2oz Cu
One active die
2oz Cu
One active die
1oz Cu
Two active die
50
1oz Cu
One active die
2oz Cu
Two active die
25
0
0.1
0.1
1
10
100
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
3 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
Electrical Characteristics – Q1 N-Channel @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
30
-
-
-
-
-
V
BVDSS
IDSS
ID = 250μA, VGS = 0V
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
0.5
μA
nA
-
±100
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
1.0
-
-
3.0
V
VGS(th)
ID = 250μA, VDS = VGS
0.100
0.140
3.5
0.120
V
V
GS = 10V, ID = 2.5A
GS = 4.5V, ID = 2.0A
Static Drain-Source On-Resistance (Note 10)
Ω
RDS (ON)
0.180
Forward Transconductance (Note 10 & 11)
Diode Forward Voltage (Note 10)
Reverse Recover Time (Note 11)
Reverse Recover Charge (Note 11)
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
-
-
-
-
-
S
V
gfs
VSD
trr
VDS = 10V, ID = 2.5A
IS = 1.7A, VGS = 0V
0.85
17.7
13.0
0.95
-
-
ns
nC
IS = 2.5A, di/dt= 100A/µs
Qrr
-
-
-
-
-
-
-
-
-
-
-
190
38
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
ns
Ciss
Coss
Crss
Qg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
20
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
2.3
3.9
0.6
0.9
1.7
2.3
6.6
2.9
VGS = 4.5V
Qg
V
DS = 15V
I
D = 2.5A
Qgs
Qgd
tD(on)
tr
VGS = 10V
ns
VDS = 15V, ID = 2.5A
GS = 10V, RG = 6Ω
ns
V
tD(off)
tf
ns
Notes:
10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.
4 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
Typical Electrical Characteristics – Q1 N-Channel
T = 150°C
T = 25°C
10V
10V
7V
7V
5V
5V
10
1
10
1
4.5V
4V
4.5V
4V
3.5V
3V
3.5V
3V
2.5V
VGS
2V
VGS
0.1
0.1
2.5V
0.1
V
1
0.1
V
1
Drain-Source Voltage 1(V0 )
Drain-Source Voltage 1(V0 )
DS
DS
Output Characteristics
Output Characteristics
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
ID = 2.5A
VDS = 10V
RDS(on)
T = 150°C
1
VGS(th)
T = 25°C
3.0
VGS = VDS
ID = 250uA
0.1
2.0
2.5
3.5
4.0
4.5
5.0
-50
0
50
100
150
VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
2.5V
3V
3.5V
VGS
4.5V
4V
10
T = 150°C
1
5V
1
7V
10V
T = 25°C
0.1
0.1
0.4
T = 25°C
0.1
0.6
0.8
1.0
1.2
1
10
ID Drain Current (A)
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
5 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
Typical Electrical Characteristics – Q1 N-Channel - Continued
300
250
200
150
100
50
10
8
VGS = 0V
f = 1MHz
ID = 2.5A
6
CISS
COSS
VDS = 15V
4
CRSS
2
0
0.1
0
0
1
2
3
4
1
10
Q - Charge (nC)
VDS - Drain - Source Voltage (V)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test Circuits
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
6 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
Electrical Characteristics – Q2 P-Channel @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-30
-
-
-
-
V
BVDSS
IDSS
ID = -250μA, VGS = 0V
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
-
-
-0.5
±100
μA
nA
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
-1.0
-
-
-3.0
V
VGS(th)
ID = -250μA, VDS = VGS
0.150
0.280
2.48
-0.85
18.6
14.8
0.210
V
V
GS = -10V, ID = -1.4A
GS = -4.5V, ID = -1.1A
Static Drain-Source On-Resistance (Note 13)
Ω
RDS (ON)
0.330
Forward Transconductance (Note 13 & 14)
Diode Forward Voltage (Note 13)
Reverse Recover Time (Note 14)
Reverse Recover Charge (Note 14)
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
-
-
-
-
-
S
V
gfs
VSD
trr
VDS = -15V, ID = -1.4A
IS = -1.1A, VGS = 0V
-0.95
-
-
ns
nC
IS = -0.95A, di/dt = 100A/µs
Qrr
-
-
-
-
-
-
-
-
-
-
-
206
59.3
49.2
3.8
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
nC
nC
nC
nC
ns
Ciss
Coss
Crss
Qg
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 15)
Total Gate Charge (Note 15)
Gate-Source Charge (Note 15)
Gate-Drain Charge (Note 15)
Turn-On Delay Time (Note 15)
Turn-On Rise Time (Note 15)
Turn-Off Delay Time (Note 15)
Turn-Off Fall Time (Note 15)
VGS = -4.5V
6.4
Qg
V
DS = -15V
0.69
2.0
I
D = -1.4A
Qgs
Qgd
tD(on)
tr
VGS = -10V
1.5
2.8
ns
VDS = -15V, ID = -1A
GS = -10V, RG = 6Ω
11.3
7.5
ns
V
tD(off)
tf
ns
Notes:
13. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
14. For design aid only, not subject to production testing.
15. Switching characteristics are independent of operating junction temperature.
7 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
Typical Electrical Characteristics – Q2 P-Channel
10V
7V
10V
T = 150°C
T = 25°C
5V
4V
3.5V
3V
10
1
10
1
5V
4V
3.5V
3V
2.5V
2V
-VGS
2V
0.1
0.01
0.1
0.01
1.5V
-VGS
-VDS Drain-Source Voltage1(0V)
-VDS Drain-Source Voltage1(0V)
0.1
1
0.1
1
Output Characteristics
Output Characteristics
1.4
1.2
1.0
0.8
0.6
VGS = -10V
-VDS = 10V
ID = - 1.4A
RDS(on)
1
T = 150°C
VGS(th)
VGS = VDS
T = 25°C
2.5
ID = -250uA
0.1
1.5
2.0
3.0
3.5
4.0
4.5
-50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
10
3V
T = 25°C
2V
2.5V
-VGS
10
3.5V
4V
T = 150°C
1
5V
1
0.1
T = 25°C
7V
10V
0.01
0.1
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
8 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
Typical Electrical Characteristics – Q2 P-Channel - Continued
10
350
300
250
200
150
100
50
VGS = 0V
f = 1MHz
ID = -1.4A
CISS
8
6
4
2
0
COSS
CRSS
VDS = -15V
1
10
0
1
2
3
4
5
6
-VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test Circuits
Current
regulator
QG
50k
0.2F
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
Pulse width Ͻ 1S
Duty factor 0.1%
tr
td(off)
tr
td(on)
t(on)
t(on)
Switching time waveforms
Switching time test circuit
9 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
Package Outline Dimensions
A
DFN3020B-8
Dim Min Max Typ
A3
A
A1
A3
b
0.77 0.83 0.80
A1
0
-
0.05 0.02
0.15
-
D
0.25 0.35 0.30
2.95 3.075 3.00
D
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
D4
D4
e
-
-
0.65
D2
E
1.95 2.075 2.00
E
E2
e
E2 0.43 0.63 0.53
L
Z
0.25 0.35 0.30
0.375
b
Z
-
-
L
All Dimensions in mm
Suggested Pad Layout
C
X
Dimensions
Value (in mm)
0.650
Y1
Y
C
G
G1
X
X1
Y
G1
0.285
0.090
0.400
1.120
G
Y2
0.730
X1
Y1
Y2
0.500
0.365
10 of 11
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December 2010
© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
A Product Line of
Diodes Incorporated
ZXMC3AMC
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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© Diodes Incorporated
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
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