ZXMC4559DN8 [ZETEX]
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET; 互补60V增强型MOSFET
| 型号： | ZXMC4559DN8 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET |
| 文件： | 总10页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMC4559DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7A
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.9A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that com bines the benefits of low on-resistance with fast switching
speed. This m akes them ideal for high efficiency, low voltage, power
m anagem ent applications.
SO8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
Motor Drive
LCD backlighting
Q1 = N-CHANNEL
Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE
REEL TAPE
QUANTITY
PER REEL
WIDTH
12m m
12m m
ZXMC4559DN8TA
ZXMC4559DN8TC
7’‘
500 units
PINOUT
13’‘
2500 units
DEVICE MARKING
•
ZXMC
4559
Top view
ISSUE 5 - MAY 2005
1
S E M IC O N D U C T O R S
ZXMC4559DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL N-Channel P-Channel
UNIT
Dra in -S o u rce Vo lta g e
V
V
60
Ϯ20
4.7
-60
Ϯ20
-3.9
V
DS S
GS
Ga te -S o u rce Vo lta g e
V
(b ) (d )
(b ) (d )
(a ) (d )
Co n tin u o u s Dra in Cu rre n t @V =10V; T =25ЊC
I
A
GS
A
D
@V =10V; T =25ЊC
3.7
-2.8
A
GS
A
@V =10V; T =25ЊC
3.6
-2.6
A
GS
A
(c)
Pu ls e d Dra in Cu rre n t
I
I
I
22.2
3.4
-18.3
-3.2
A
A
DM
(b )
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e )
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )(c)
S
22.2
-18.3
A
S M
(a ) (d )
Po w e r Dis s ip a tio n a t TA=25°C
P
P
P
1.25
10
W
D
D
D
Lin e a r De ra tin g Fa cto r
m W/°C
W
(a ) (e )
Po w e r Dis s ip a tio n a t TA=25°C
1.8
14
Lin e a r De ra tin g Fa cto r
m W/°C
W
(b ) (d )
Po w e r Dis s ip a tio n a t TA=25°C
2.1
17
Lin e a r De ra tin g Fa cto r
m W/°C
°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
T :T
-55 to +150
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
100
69
UNIT
°C/W
°C/W
°C/W
(a ) (d )
J u n ctio n to Am b ie n t
R
R
R
⍜J A
⍜J A
⍜J A
(b ) (e )
J u n ctio n to Am b ie n t
(b ) (d )
J u n ctio n to Am b ie n t
58
Notes
(a) For a dual device surface m ounted on 25m m x 25m m FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface m ounted on FR4 PCB m easured at t Յ10 sec.
(c) Repetitive rating 25m m x 25m m FR4 PCB, D=0.02 pulse width=300s - pulse width lim ited by m axim um junction tem perature.
(d) For a device with one active die.
(e) For device with 2 active die running at equal power.
ISSUE 5 - MAY 2005
2
S E M IC O N D U C T O R S
ZXMC4559DN8
CHARACTERISTICS
ISSUE 5 - MAY 2005
3
S E M IC O N D U C T O R S
ZXMC4559DN8
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated).
PARAMETER
S YMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS .
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
60
V
A
n A
V
I =250A, V =0V
D GS
(BR)DS S
I
I
1.0
V
=60V, V =0V
DS S
DS GS
100
V
=Ϯ20V, V =0V
GS S
GS DS
Ga te -S o u rce Th re s h o ld Vo lta g e
S ta tic Dra in -S o u rce On -S ta te
V
R
1.0
I =250A, V = V
DS GS
D
GS (th )
0.055
0.075
V
V
V
=10V, I =4.5A
D
⍀
DS (o n )
GS
GS
DS
(1)
Re s is ta n ce
=4.5V, I =4.0A
D
⍀
(1) (3)
Fo rw a rd Tra n s co n d u cta n ce
g
10.2
S
=15V,I =4.5A
D
fs
(3)
DYNAMIC
In p u t Ca p a cita n ce
C
C
C
1063
104
64
p F
p F
p F
is s
V
=30V, V =0V,
GS
DS
Ou tp u t Ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e Tra n s fe r Ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -On De la y Tim e
Ris e Tim e
t
t
t
t
3.5
4.1
n s
n s
n s
n s
n C
d (o n )
r
V
R
=30V, I =1A
D
DD
Tu rn -Off De la y Tim e
Fa ll Tim e
26.2
10.6
11.0
d (o ff)
f
≅6.0⍀, V =10V
G
GS
Ga te Ch a rg e
Q
V
=30V,V =5V,
g
DS GS
ID=4.5A
To ta l Ga te Ch a rg e
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
Q
Q
Q
20.4
4.1
n C
n C
n C
g
V
=30V,V =10V,
DS
GS
g s
g d
ID=4.5A
5.1
S OURCE-DRAIN DIODE
(1)
Dio d e Fo rw a rd Vo lta g e
V
0.85
1.2
V
T =25°C, I =5.5A,
J S
S D
V
=0V
GS
(3)
Re ve rs e Re co ve ry Tim e
t
22
n s
T =25°C, I =2.2A,
J F
rr
(3)
d i/d t= 100A/s
Re ve rs e Re co ve ry Ch a rg e
Q
21.4
n C
rr
NOTES
(1) Measured under pulsed conditions. Width Յ300s. Duty cycle Յ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 5 - MAY 2005
4
S E M IC O N D U C T O R S
ZXMC4559DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
-60
V
A
n A
V
I =-250A, V =0V
D GS
(BR)DS S
I
I
-1.0
100
V
=-60V, V =0V
DS S
DS GS
V
=Ϯ20V, V =0V
DS
GS S
GS
Ga te -S o u rce Th re s h o ld Vo lta g e
S ta tic Dra in -S o u rce On -S ta te
V
R
-1.0
I =-250A, V = V
DS GS
D
GS (th )
0.085
0.125
V
V
V
=-10V, I =-2.9A
D
⍀
⍀
DS (o n )
GS
GS
DS
(1)
Re s is ta n ce
=-4.5V, I =-2.4A
D
(1) (3)
Fo rw a rd Tra n s co n d u cta n ce
g
7.2
S
=-15V,I =-2.9A
D
fs
(3)
DYNAMIC
In p u t Ca p a cita n ce
C
C
C
1021
83.1
56.4
p F
p F
p F
is s
V
=-30 V, V =0V,
GS
DS
Ou tp u t Ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e Tra n s fe r Ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -On De la y Tim e
Ris e Tim e
t
t
t
t
3.5
4.1
35
n s
n s
n s
n s
n C
d (o n )
V
R
=-30V, I =-1A
DD
D
r
6.0⍀, V =-10V
Tu rn -Off De la y Tim e
Fa ll Tim e
G
GS
d (o ff)
f
10
Ga te Ch a rg e
Q
12.1
V
=-30V,V =-5V,
g
DS GS
I =-2.9A
D
To ta l Ga te Ch a rg e
Q
Q
Q
24.2
2.5
n C
n C
n C
g
V
=-30V,V =-10V,
GS
DS
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
S OURCE-DRAIN DIODE
g s
g d
I =-2.9A
D
3.7
(1)
Dio d e Fo rw a rd Vo lta g e
V
-0.85
-0.95
V
T =25°C, I =-3.4A,
J S
S D
V
=0V
GS
(3)
Re ve rs e Re co ve ry Tim e
t
29.2
39.6
n s
T =25°C, I =-2A,
J F
d i/d t= 100A/µs
rr
(3)
Re ve rs e Re co ve ry Ch a rg e
Q
n C
rr
NOTES
(1) Measured under pulsed conditions. Width Յ300s. Duty cycle Յ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 5 - MAY 2005
5
S E M IC O N D U C T O R S
ZXMC4559DN8
N-CHANNEL TYPICAL CHARACTERISTICS
10V
T = 150°C
T = 25°C
10
4.5V
4.5V
4V
10V
10
1
4V
3.5V
3.5V
3V
1
0.1
3V
2.5V
0.1
0.01
V
GS
V
GS
2V
2.5V
0.01
0.1
V
1
10
0.1
V
1
10
Drain-Source Voltage (V)
Drain-Source Voltage (V)
DS
DS
Output Characteristics
Output Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10V
IDG=S 4.5A
10
1
T = 150°C
RDS(on)
V
T = 25°C
GS(th)
0.1
0.01
V
= V
IDG=S 250uA
DS
VDS = 10V
2
3
4
5
-50
0
50
100
150
V
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
GS
Normalised Curves v Temperature
Typical Transfer Characteristics
100
2.5V
1000
100
10
T = 25°C
T = 150°C
V
GS
10
1
3V
3.5V
T = 25°C
4V
4.5V
1
0.1
0.01
10V
0.1
0.01
0.2
0.6
1.0
1.2
V 0.4Source-Drain0V.8oltage (V)
0.01
0.1
1
10
ID Drain Current (A)
SD
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
ISSUE 5 - MAY 2005
6
S E M IC O N D U C T O R S
ZXMC4559DN8
N-CHANNEL TYPICAL CHARACTERISTICS
1600
1400
1200
1000
800
600
400
200
0
10
V
GS = 0V
ID = 4.5A
f = 1MHz
8
6
4
2
0
C
ISS
COSS
C
RSS
V
DS = 30V
0.1
1
10
0
5
10
15
20
25
V - Drain - Source Voltage (V)
Q - Charge (nC)
DS
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
ISSUE 5 - MAY 2005
7
S E M IC O N D U C T O R S
ZXMC4559DN8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 5 - MAY 2005
8
S E M IC O N D U C T O R S
ZXMC4559DN8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 5 - MAY 2005
9
S E M IC O N D U C T O R S
ZXMC4559DN8
PACKAGE OUTLINE
PACKAGE DIMENSIONS
INCHES
MIN
MILLIMETRES
⍜
DIM
D
MAX
0.069
0.010
0.197
0.244
0.157
0.050
MIN
1.35
0.10
4.80
5.80
3.80
0.40
MAX
1.75
0.25
5.00
6.20
4.00
1.27
A
A1
D
H
E
0.053
0.004
0.189
0.228
0.150
0.016
Pin 1
c
L
e
0.050 BSC
1.27 BSC
Seating Plane
b
0.013
0.008
0Њ
0.020
0.010
8Њ
0.33
0.19
0Њ
0.51
0.25
8Њ
b
e
c
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES
⍜
h
0.010
0.020
0.25
0.50
© Zetex Sem iconductors plc 2005
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ISSUE 5 - MAY 2005
10
S E M IC O N D U C T O R S
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