ZXMC3F31DN8TA [DIODES]
30V SO8 Complementary dual enhancement mode; 30V SO8互补双增强模式
| 型号： | ZXMC3F31DN8TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V SO8 Complementary dual enhancement mode |
| 文件： | 总11页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMC3F31DN8
30V SO8 Complementary dual enhancement mode
MOSFET
Summary
V(BR)DSS
(V)
QG
(nC)
Device
RDS(on) (Ω)
ID (A)
0.024 @ VGS= 10V
0.039 @ VGS= 4.5V
0.045 @ VGS= -10V
0.080 @ VGS= -4.5V
7.3
5.7
5.3
4
Q1
Q2
30
12.9
12.7
-30
Description
This new generation Trench MOSFET from Zetex has been designed to
minimize the on-state resistance (RDS(on)) and yet maintain superior
switching performance making it ideal for power management and
battery charging functions.
Features
•
•
•
Low on-resistance
4.5V gate drive capability
Low profile SOIC package
D1
D2
Applications
G1
G2
•
•
•
•
•
DC-DC Converters
SMPS
S1
S2
Q1 N-Channel
Q2 P-Channel
Load switching switches
Motor control
Backlighting
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
S1
G1
S2
G2
D1
D1
D2
D2
N
ZXMC3F31DN8TA
Device marking
7
12
500
P
ZXMC
3F31
Top view
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ZXMC3F31DN8
Absolute maximum ratings
Parameter
Symbol
N-
channel
Q1
P-
channel
Q2
Unit
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
30
-30
V
V
±20
±20
(b)(d)
(b)(d)
(a)(d)
(a)(e)
(f)(d)
7.3
5.9
5.7
6.8
7.8
5.3
4.3
4.1
4.9
5.7
A
ID
Continuous Drain current @ VGS= 10V; TA=25°C
@ VGS= 10V; TA=70°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TA=25°C
@ VGS= 10V; TL=25°C
(c)
IDM
33
3.5
33
23
3.2
23
A
A
A
Pulsed Drain current
(b)(d)
Continuous Source current (Body diode)
IS
(c)(d)
Pulsed Source current (Body diode)
ISM
PD
(a)(d)
1.25
10
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
(a)(e)
1.8
14
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
P
D
P
D
P
D
(b)(d)
2.1
17
W
mW/°C
Power dissipation at TA =25°C
Linear derating factor
(f) (d)
2.35
19
W
mW/°C
Power dissipation at TL =25°C
Linear derating factor
T , T
j
Operating and storage temperature range
-55 to 150
stg
°C
Thermal resistance
Parameter
Symbol
Value
Unit
°C/W
°C/W
°C/W
°C/W
(a)(d)
R
θJA
100
Junction to ambient
(a)(e)
R
θJA
70
60
53
Junction to ambient
(b)(d)
R
θJA
Junction to ambient
(f) (d)
R
θJL
Junction to lead
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still
air conditions.
(b) Mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction
temperature.
(d) For a device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead).
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Thermal characteristics
RDS(ON)
RDS(ON)
Limited
10
Limited
10
1
DC
1
DC
1s
1s
100ms
100ms
100m
10ms
100m
10m
10ms
1ms
1ms
Note (a)(d)
Note (a)(d)
100us
10
100us
10
10m
0.1
NPN @ Single Pulse, Tamb=25°C
1
PNP @ Single Pulse, Tamb=25°C
1
0.1
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
2.0
100
80
1.5
1.0
0.5
0.0
Two active die
One active die
D=0.5
D=0.2
60
40
20
0
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m
1
10
100
1k
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
Single Pulse
amb=25°C
T
100
10
1
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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ZXMC3F31DN8
Q1 N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
30
V
V(BR)DSS
IDSS
ID = 250μA, VGS=0V
DS=30V, VGS=0V
Zero Gate voltage Drain
current
0.5
µA
V
IGSS
Gate-Body leakage
100
3.0
nA
V
VGS=±20V, VDS=0V
ID= 250μA, VDS=VGS
Gate-Source threshold
voltage
VGS(th)
1.0
RDS(on)
Static Drain-Source
0.024
0.039
Ω
V
GS= 10V, ID= 7.0A
GS= 4.5, ID= 6.0A
( )
on-state resistance *
V
gfs
Forward
16.5
S
VDS= 15V, ID= 7.0A
( ) (†)
Transconductance *
(†)
Dynamic
Input capacitance
Output capacitance
608
132
72
pF
pF
pF
Ciss
Coss
Crss
VDS= 15V, VGS=0V
f=1MHz
Reverse transfer
capacitance
(‡) (†)
Switching
Turn-on-delay time
Rise time
2.9
3.3
16
ns
ns
ns
ns
nC
td(on)
tr
td(off)
tf
VDD= 15V, VGS=10V
ID= 1A
Turn-off delay time
Fall time
RG ≅ 6.0Ω,
8
Total Gate charge
12.9
Qg
VDS= 15V, VGS= 10V
ID= 7A
Gate-Source charge
Gate-Drain charge
Source–Drain diode
2.5
nC
nC
Qgs
Qgd
2.52
( )
IS= 1.7A,VGS=0V
0.82
12
1.2
V
Diode forward voltage *
VSD
trr
(‡)
ns
nC
Reverse recovery time
IS= 2.2A,di/dt=100A/μs
(‡)
4.8
Qrr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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Q1 Typical characteristics
10V
5V
VGS
T = 150°C
10V
4V
4V
3.5V
3V
10
1
10
1
3.5V
2.5V
3V
2V
0.1
0.01
0.1
2.5V
VGS
1.5V
T = 25°C
0.01
0.1
V
1
0.1
V
1
Drain-Source Voltage 1(V0 )
Drain-Source Voltage 1(V0 )
DS
DS
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
ID = 7A
10
1
VDS = 10V
RDS(on)
T = 150°C
VGS(th)
T = 25°C
VGS = VDS
ID = 250uA
0.1
2
4
-50
0
50
150
Tj Junction Temperatu1re00(°C)
VGS Gate-Source 3Voltage (V)
Typical Transfer Characteristics
Normalised Curves v Temperature
1000
10
2.5V
VGS
T = 25°C
100
T = 150°C
1
3V
10
3.5V
0.1
0.01
1E-3
T = 25°C
1
4V
0.1
4.5V
10V
Vgs = -3V
0.8 1.0
VSD Source-Drain Voltage (V)
0.01
0.01
0.2
0.4
0.6
ID Drain C1urrent (A)10
0.1
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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Q1 Typical characteristics –cntd.
900
800
700
600
10
9
8
7
6
5
4
3
2
1
0
VGS = 0V
f = 1MHz
ID = 7A
CISS
500
COSS
400
CRSS
300
VDS = 15V
200
100
0
1
10
0
1
2
4
5
7 8 9 10 11 12 13 14
3 Q - Ch6arge (nC)
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test circuits
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Q2 P-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-Source breakdown
voltage
-30
V
V(BR)DSS
IDSS
ID = -250μA, VGS=0V
DS=-30V, VGS=0V
Zero Gate voltage Drain
current
-5.0
µA
V
IGSS
Gate-Body leakage
-100
-3.0
nA
V
VGS=±20V, VDS=0V
ID= -250μA, VDS=VGS
Gate-Source threshold
voltage
VGS(th)
-1.0
RDS(on)
Static Drain-Source
0.045
0.080
Ω
V
GS= -10V, ID= -5.0A
GS= -4.5V, ID= -4.0A
( )
on-state resistance *
V
gfs
Forward
14
S
VDS= -15V, ID= -5.0A
( ) (†)
Transconductance *
(†)
Dynamic
Input capacitance
Output capacitance
670
126
70
pF
pF
pF
Ciss
Coss
Crss
VDS= -15V, VGS=0V
f=1MHz
Reverse transfer
capacitance
(‡) (†)
Switching
Turn-on-delay time
Rise time
1.9
3
ns
ns
ns
ns
nC
td(on)
tr
td(off)
tf
VDD= -15V, VGS=-10V
ID= -1A
Turn-off delay time
Fall time
30
RG ≅ 6.0Ω,
21
Total Gate charge
12.7
Qg
VDS= -15V, VGS= -10V
ID= -5A
Gate-Source charge
Gate-Drain charge
Source–Drain diode
2
nC
nC
Qgs
Qgd
2.4
( )
IS= -2A,VGS=0V
-0.82
16.5
11.5
-1.2
V
Diode forward voltage *
VSD
trr
(‡)
ns
nC
Reverse recovery time
IS= -2.1A,di/dt=100A/μs
(‡)
Qrr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
(†)Switching characteristics are independent of operating junction temperature.
(‡)For design aid only, not subject to production testing
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Typical characteristics
10V
10V
4.5V
4V
4V
3V
T = 25°C
10
3.5V
3V
T = 150°C
3.5V
10
1
2.5V
1
2V
2.5V
VGS
0.1
VGS
0.01
0.1
0.1
1
0.1
1
-VDS Drain-Source Voltage1(0V)
-VDS Drain-Source Voltage1(0V)
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
ID = 5A
VDS = 10V
10
1
RDS(on)
T = 150°C
T = 25°C
VGS = VDS
VGS(th)
ID = 250uA
0.1
2.0
3.5
-50
0
50
150
Tj Junction Temperatu1re00(°C)
-V G2a.t5e-Source V3o.l0tage (V)
Typical TGraS nsfer Characteristics
Normalised Curves v Temperature
10
2.5V
VGS
T = 25°C
10
T = 150°C
1
3V
3.5V
1
0.1
T = 25°C
4V
4.5V
10V
0.1
0.01
1E-3
Vgs = 0V
0.8
0.01
0.01
0.2
0.4
0.6
1.0
0.1
1
10
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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Typical characteristics
1000
800
10
9
8
7
6
5
4
3
2
1
0
ID = 5A
VGS = 0V
f = 1MHz
600
400
200
0
CISS
COSS
CRSS
VDS = 15V
1
10
0
5
15
Q - Charge (nC1)0
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test circuits
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Package outline SO8
SO8 Package Information
DIM
Inches
Min.
Millimeters
DIM
Inches
Min. Max.
0.050 BSC
Millimeters
Max.
0.069
0.010
0.197
0.244
0.157
0.050
Min.
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
Max.
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.35
0.10
4.80
5.80
3.80
0.40
e
b
c
1.27 BSC
0.013
0.020
0.010
8°
0.33
0.19
0°
0.51
0.25
8°
0.008
0°
H
U
h
-
E
0.010
-
0.020
-
0.25
-
0.50
-
L
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
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Definitions
Product change
Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the
user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by
Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such
use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including
negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss
in the use of these circuit applications, under any circumstances.
Life support
Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
B.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.
Quality of product
Diodes Zetex Semiconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com or www.diodes.com
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Diodes Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding
regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the
use of hazardous substances and/or emissions.
All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE
and ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
Diodes Zetex sales offices
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Zetex Inc
Diodes Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Diodes Incorporated
15660 N. Dallas Parkway
Suite 850, Dallas
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
TX75248, USA
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (1) 972 385 2810
www.diodes.com
© 2008 Published by Diodes Incorporated
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