ZXMC3AM832TA [ZETEX]
MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET; MPPS⑩微型封装的电源解决方案互补30V增强型MOSFET
| 型号： | ZXMC3AM832TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET |
| 文件： | 总10页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMC3AM832
MPPS™ Miniature Package Pow er Solutions
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A
P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A
DESCRIPTION
Packaged in the new innovative 3m m x 2m m MLP(Micro Leaded Package)
outline this dual 30V N channel Trench MOSFET utilizes a unique structure
com bining the benefits of Low on-resistance with fast switching speed. This
m akes them ideal for high efficiency, low voltage power m anagem ent
applications. Users will also gain several other key benefits:
Perform ance capability equivalent to m uch larger packages
Im proved circuit efficiency & pow er levels
PCB area and device placem ent savings
Reduced com ponent count
3m m x 2m m Dual Die MLP
FEATURES
•
•
•
•
•
Low on - resistance
Fast switching speed
Low threshold
Low gate drive
3m m x 2m m MLP
APPLICATIONS
•
•
•
MOSFET gate drive
LCD backlight inverters
Motor control
PINOUT
5
6
7
2
8
D2
D2
D1
D1
ORDERING INFORMATION
DEVICE
REEL TAPE
QUANTITY
PER REEL
WIDTH
S1
G1
S2
G2
ZXMC3AM832TA
ZXMC3AM832TC
7’‘
8m m
3000 units
4
1
3
13’‘
8m m
10000 units
3 x 2 Dual MLP
underside view
DEVICE MARKING
C01
PROVISIONAL ISSUE E - J ULY 2004
1
ZXMC3AM832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL N-Ch a n n e l P-Ch a n n e l
UNIT
V
Dra in -S o u rce Vo lta g e
Ga te -S o u rce Vo lta g e
V
V
30
-30
DS S
GS
Ϯ20
Ϯ20
V
(b )(f)
(b )(f)
(a )(f)
Co n tin u o u s Dra in Cu rre n t@V =10V; T =25ЊC
I
3.7
3.0
2.9
-2.7
-2.2
-2.1
A
A
GS
A
D
@V =10V; T =25ЊC
GS
A
@V =10V; T =25ЊC
GS
A
Pu ls e d Dra in Cu rre n t
I
I
I
12.4
2.4
-9.2
-2.8
-9.2
A
A
A
DM
(b )(f)
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e )
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )
S
12.4
S M
(a )(f)
Po w e r Dis s ip a tio n a t TA=25°C
P
P
P
P
P
1.5
12
W
m W/°C
D
D
D
D
D
Lin e a r De ra tin g Fa cto r
(b )(f)
Po w e r Dis s ip a tio n a t TA=25°C
2.45
19.6
W
m W/°C
Lin e a r De ra tin g Fa cto r
(c)(f)
Po w e r Dis s ip a tio n a t TA=25°C
1
8
W
m W/°C
Lin e a r De ra tin g Fa cto r
(d )(f)
Po w e r Dis s ip a tio n a t TA=25°C
1.13
8
W
m W/°C
Lin e a r De ra tin g Fa cto r
(d )(g )
Po w e r Dis s ip a tio n a t TA=25°C
1.7
W
13.6
m W/°C
Lin e a r De ra tin g Fa cto r
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
83.3
51
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
(a )(f)
J u n ctio n to Am b ie n t
R
R
R
R
R
R
θJ A
θJ A
θJ A
θJ A
θJ A
θJ A
(b )(f)
J u n ctio n to Am b ie n t
(c)(f)
J u n ctio n to Am b ie n t
125
(d )(f)
J u n ctio n to Am b ie n t
111
(d )(g )
J u n ctio n to Am b ie n t
73.5
41.7
(e )(g )
J u n ctio n to Am b ie n t
Notes
(a) For a dual device surface m ounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions w ith all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface m ounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions w ith all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface m ounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions w ith m inim al lead connections only.
(d) For a dual device surface m ounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions w ith all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface m ounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions w ith all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width lim ited by m ax junction tem perature. Refer to Transient Therm al Im pedance graph.
(i) The m inim um copper dim ensions required for m ounting are no sm aller than the exposed m etal pads on the base if the device as shown in the
package dim ensions data. The therm al resistance for a dual device m ounted on 1.5m m thick FR4 board using m inim um copper 1 oz weight, 1m m
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500m W.
PROVISIONAL ISSUE E - J ULY 2004
2
ZXMC3AM832
TYPICAL CHARACTERISTICS
RDS(ON)
Limited
RDS(ON)
Limited
10
10
1
1
DC
DC
1s
1s
100ms
100ms
100m
100m
10ms
10ms
1ms
1ms
Note (a)(f)
Note (a)(f)
100us
10
100us
10
Single Pulse, Tamb=25°C
1
10m
10m Single Pulse, Tamb=25°C
1
V
Drain-Source Voltage (V)
-V Drain-Source Voltage (V)
DS
DS
N-channel Safe Operating Area
P-channel Safe Operating Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Note (a)(f)
80
60
40
20
0
2oz Cu
Note (e)(g)
2oz Cu
Note (a)(f)
D=0.5
1oz Cu
Note (d)(g)
Single Pulse
D=0.2
D=0.05
D=0.1
1oz Cu
Note (d)(f)
100µ 1m 10m 100m
1
10 100
1k
0
25
50
75
100 125 150
Pulse Width (s)
Temperature (°C)
Derating Curve
Transient Thermal Impedance
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
225
200
175
150
125
100
75
2oz copper
Note (g)
T
T
amb=25°C
jmax=150°C
Continuous
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (f)
1oz copper
Note (g)
50
1oz copper
Note (f)
2oz copper
Note (g)
25
0
0.1
1
10
100
0.1
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Thermal Resistance v Board Area
Power Dissipation v Board Area
PROVISIONAL ISSUE E - J ULY 2004
3
ZXMC3AM832
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
30
V
µA
n A
V
I =250µA, V =0V
(BR)DS S
D
GS
I
0.5
V
=30V, V =0V
DS S
DS GS
I
100
V
= 20V, V =0V
DS
GS S
GS
Ga te -S o u rce Th re s h o ld Vo lta g e
Static Drain-Source On-State Resistance
V
1
I =250µA, V = V
GS (th )
DS
GS
D
(1)
R
0.106
3.5
0.12
0.18
V
V
=10V, I =2.5A
D
Ω
Ω
DS (o n )
GS
GS
=4.5V, I =2.0A
D
(1)(3)
Fo rw a rd Tra n s co n d u cta n ce
g
S
V
=4.5V,I =2.5A
D
fs
DS
(3)
DYNAMIC
In p u t Ca p a cita n ce
C
C
C
190
38
p F
p F
p F
is s
V
=25 V, V =0V,
DS
GS
Ou tp u t Ca p a cita n ce
f=1MHz
o s s
rs s
Re ve rs e Tra n s fe r Ca p a cita n ce
20
(2) (3)
S WITCHING
Tu rn -On De la y Tim e
Ris e Tim e
t
t
t
t
1.7
2.3
6.6
2.9
2.3
n s
n s
n s
n s
n C
d (o n )
V
R
=15V, I =2.5A
D
r
DD
=6.0Ω, V =10V
G
GS
Tu rn -Off De la y Tim e
Fa ll Tim e
d (o ff)
f
Ga te Ch a rg e
Q
V
=15V,V =5V,
g
DS GS
ID=2.5A
To ta l Ga te Ch a rg e
Q
Q
Q
3.9
0.6
0.9
n C
n C
n C
g
V
=15V,V =10V,
GS
DS
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
S OURCE-DRAIN DIODE
ID=2.5A
g s
g d
(1)
Dio d e Fo rw a rd Vo lta g e
V
0.85
0.95
V
T =25°C, I =1.7A,
J S
S D
V
=0V
GS
(3)
Re ve rs e Re co ve ry Tim e
t
17.7
13.0
n s
T =25°C, I =2.5A,
J F
d i/d t= 100A/µs
rr
(3)
Re ve rs e Re co ve ry Ch a rg e
Q
n C
rr
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE E - J ULY 2004
4
ZXMC3AM832
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherwise stated)
PARAMETER
S YMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
-30
V
A
n A
V
I =-250µA, V =0V
(BR)DS S
D
GS
I
I
1
V
=-30V, V =0V
DS S
GS S
DS GS
100
V
=Ϯ20V, V =0V
GS DS
Ga te -S o u rce Th re s h o ld Vo lta g e
Static Drain-Source On-State Resistance
V
R
-0.8
I =-250A, V = V
DS GS
D
GS (th )
DS (o n )
(1)
0.210
0.330
V
V
=-10V, I =-1.4A
Ω
Ω
GS
GS
D
=-4.5V, I =-1.1A
D
(1)(3)
Fo rw a rd Tra n s co n d u cta n ce
g
2.48
S
V
=-15V,I =-1.4A
D
fs
DS
(3)
DYNAMIC
In p u t Ca p a cita n ce
C
C
C
204
39.8
25.8
p F
p F
p F
is s
V
=-15 V, V =0V,
DS
GS
Ou tp u t Ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e Tra n s fe r Ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -On De la y Tim e
Ris e Tim e
t
t
t
t
1.5
2.8
n s
n s
n s
n s
n C
d (o n )
r
V
R
=-15V, I =-1A
D
DD
=6.0Ω, V =-10V
G
GS
Tu rn -Off De la y Tim e
Fa ll Tim e
11.3
7.5
d (o ff)
f
Ga te Ch a rg e
Q
2.58
V
=-15V,V =-5V,
g
DS GS
I =-1.4A
D
To ta l Ga te Ch a rg e
Q
Q
Q
5.15
0.65
0.92
n C
n C
n C
g
V
=-15V,V =-10V,
GS
DS
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
S OURCE-DRAIN DIODE
g s
g d
I =-1.4A
D
(1)
Dio d e Fo rw a rd Vo lta g e
V
-0.85
-0.95
V
T =25°C, I =-1.1A,
J S
S D
V
=0V
GS
(3)
Re ve rs e Re co ve ry Tim e
t
18.6
14.8
n s
T =25°C, I =-0.95A,
J F
d i/d t= 100A/µs
rr
(3)
Re ve rs e Re co ve ry Ch a rg e
Q
n C
rr
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE E - J ULY 2004
5
ZXMC3AM832
N-CHANNEL TYPICAL CHARACTERISTICS
T = 150°C
10V 7V
10V
5V
7V
5V
T = 25°C
10
1
10
1
4.5V
4V
4.5V
4V
3.5V
3.5V
3V
3V
2.5V
2V
V
GS
V
GS
0.1
0.1
2.5V
0.V1 Drain-So1urce Voltage1(0V)
0.V1 Drain-So1urce Voltage1(0V)
DS
Output Characteristics
DSOutput Characteristics
10
1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10V
V
DS = 10V
IDG=S 2.5A
RDS(on)
T = 150°C
V
GS(th)
T= 25°C
3.0
V
= V
DS
IDG=S 250uA
0.1
2.0
2.5
3.5
4.0
4.5
5.0
-50
0
50 100
150
V
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
GS
Typical Transfer Characteristics
Normalised Curves v Temperature
3.5V 4V
V
3V
2.5V
10
1
GS
T = 150°C
1
4.5V
5V
7V
10V
10
T = 25°C
0.1
0.1
T= 25°C
0.1
0.4
0.6
0.8
1.0
1.2
1
ID Drain Current (A)
V
Source-Drain Voltage (V)
SD
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
PROVISIONAL ISSUE E - J ULY 2004
6
ZXMC3AM832
N-CHANNEL TYPICAL CHARACTERISTICS
300
250
200
150
100
50
10
V
GS = 0V
ID = 2.5A
f = 1MHz
8
6
4
2
0
C
ISS
COSS
V = 15V
DS
C
RSS
0
0
1
2
3
4
0.1
1
10
V - Drain - Source Voltage (V)
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
CapaDcSitance v Drain-Source Voltage
PROVISIONAL ISSUE E - J ULY 2004
7
ZXMC3AM832
P-CHANNEL TYPICAL CHARACTERISTICS
10V
T = 150°C
T= 25°C
10
10V
5V
10
1
5V
4V
4V
3.5V
3V
3.5V
3V
2.5V
1
2.5V
-V
GS
2V
2V
0.1
0.1
0.01
-V
GS
1.5V
0.01
1
10
1
10
0.-1V Drain-Source Voltage (V)
0.-1V Drain-Source Voltage (V)
DS
DS
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
V
= -10V
IDG=S -1.4A
RDS(on)
T = 150°C
1
T= 25°C
V
GS(th)
V
= V
IDG=S -250uA
DS
0.1
-VDS = 10V
1
2
3
4
5
-50
0
50
100
150
-V Gate-Source Voltage (V)
Tj Junction Temperature (°C)
GS
Typical Transfer Characteristics
Normalised Curves v Temperature
2V
10
T= 25°C
100
10
1
-V
GS
2.5V
T = 150°C
1
0.1
3V
3.5V
4V
T= 25°C
1.0
5V
10V
0.01
0.1
0.2
0.4
0.8
1.4
-V So0u.6rce-Drain Voltage1(.V2 )
0.1
1
10
-I Drain Current (A)
SD
On-ResDistance v Drain Current
Source-Drain Diode Forward Voltage
PROVISIONAL ISSUE E - J ULY 2004
8
ZXMC3AM832
P-CHANNEL TYPICAL CHARACTERISTICS
300
250
200
150
100
50
10
V
GS = 0V
ID = -1.4A
f = 1MHz
8
6
4
2
0
C
ISS
COSS
C
RSS
VDS = -15V
0
0.1
1
10
0
2
4
6
-V - Drain - Source Voltage (V)
Q - Charge (nC)
DS
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
PROVISIONAL ISSUE E - J ULY 2004
9
ZXMC3AM832
MLP832 PACKAGE OUTLINE (3m m x 2m m Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX. CONVERTED DIMENSIONS IN INCHES
PACKAGE DIMENSIONS
Millim eters
Min
Inches
Millim eters
Min Max
Inches
DIM
DIM
Max
1.00
0.05
0.75
0.25
0.34
0.30
Min
Max
Min
Max
A
A1
A2
A3
b
0.80
0.00
0.65
0.15
0.24
0.17
0.0315
0.00
0.0394
0.002
e
E
E2
L
L2
r
0.65 BSC
2.00 BSC
0.0256 BSC
0.0787 BSC
0.0256
0.006
0.0295
0.0098
0.0134
0.0118
0.43
0.63
0.45
0.017
0.0248
0.0177
0.005
0.20
0.00
0.0079
0.00
0.0095
0.0068
0.125
b1
D
0.075 BSC
0.0029 BSC
3.00 BSC
0.118 BSC
⍜
-
0Њ
-
12Њ
0Њ
-
12Њ
D2
D3
0.82
1.01
1.02
1.21
0.0323
0.0398
0.0402
0.0476
-
-
-
-
-
-
-
© Zetex Sem iconductors plc 2004
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PROVISIONAL ISSUE E - J ULY 2004
10
相关型号：
ZXMC3AM832TC
MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZETEX
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