ZUMT848B [ETC]

Obsolete ; 过时的\n
ZUMT848B
型号: ZUMT848B
厂家: ETC    ETC
描述:

Obsolete
过时的\n

文件: 总3页 (文件大小:26K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SOT323 NPN SILICON PLANAR  
GENERAL PURPOSE TRANSISTOR  
ISSUE 1 - DECEMBER 1998  
ZUMT848B  
Partmarking Detail:  
- T14  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Pulse Current  
VCBO  
VCES  
VCEO  
VEBO  
IC  
30  
30  
V
30  
5
V
V
100  
mA  
mA  
mA  
mW  
°C  
IEM  
200  
Base Current  
IBM  
200  
Power Dissipation at Tamb=25°C  
Ptot  
330  
Operating and Storage  
Temperature Range  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector Cut-Off Current ICBO  
15  
5
nA  
µA  
VCB = 30V  
V
CB = 30V, Tamb=150°C  
Collector-Emitter  
VCE(sat)  
90  
250  
600  
600  
mV  
mV  
mV  
mV  
IC=10mA, IB=0.5mA  
IC=100mA, IB=5mA  
IC=10mA*  
Saturation Voltage  
200  
300  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE  
700  
900  
IC=10mA ,IB=0.5mA  
IC=100mA,IB=5mA  
Base-Emitter Voltage  
580  
650  
750  
770  
mV  
IC=2mA, VCE=5V  
IC=10mA, VCE=5V  
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the  
operating point IC = 11mA, VCE = 1V at constant base current.  
TYPICAL CHARACTERISTICS  
ZUMT848B  
ELECTRICAL CHARACTERISTICS (Continued)  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Noise Figure  
N
2
10 dB  
V
CB = 5V, IC=200µA,  
RG=2k, f=1kHz, f=200Hz  
dB  
nV  
V
CB = 5V, IC=200µA,  
RG=2k, f=30Hz to 15kHz  
at 3dB points  
Equivalent Noise Voltage  
Dynamic  
en  
V
CB = 5V, IC=200µA,  
RG=2k, f=10Hz to 50Hz at  
3dB points  
hie  
hre  
hfe  
hoe  
hFE  
3.2  
4.5  
2
8.5  
kΩ  
Group B  
Characteristics  
x10-4  
Group B  
Group B  
Group B  
Group B  
VCE=5V  
Ic=2mA  
f=1kHz  
240 330  
500  
60  
30  
150  
290 450  
µs  
Static Forward  
Current Ratio  
IC=0.01mA,VCE=5V  
IC=2mA, VCE=5V  
IC=100mA,VCE=5V  
200  
200  
300  
Transition  
Frequency  
fT  
MHz IC=10mA,VCE=5V  
f=100MHz  
Collector-Base  
Capacitance  
Cobo  
Cibo  
2.5 4.5  
9
VCB=10V, f=1MHz  
pF  
Emitter-Base  
Capacitance  
VEB=0.5V, f=1MHz  
pF  

相关型号:

ZUMT850B

Obsolete
ETC

ZUMT850C

Obsolete
ETC

ZUMT858B

Obsolete
ETC

ZUMT860B

TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | SOT-323
ETC

ZUMT860C

Obsolete
ETC

ZUMT918

NPN SILICON PLANAR VHF/UHF TRANSISTOR
ZETEX

ZUMT918TA

VHF/UHF TRANSISTOR
DIODES

ZUMTQ31A

NPN SILICON PLANAR VHF/UHF TRANSISTORS
ZETEX

ZUMTS17

NPN SILICON PLANAR RF TRANSISTORS
ZETEX

ZUMTS17H

NPN SILICON PLANAR RF TRANSISTORS
ZETEX

ZUMTS17N

NPN RF TRANSISTOR IN SOT-323
DIODES