ZUMT860B [ETC]
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | SOT-323 ; 晶体管| BJT | PNP | 45V V（ BR ） CEO | 100MA I（C ） | SOT- 323\n
| 型号： | ZUMT860B |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 100MA I(C) | SOT-323
|
| 文件： | 总3页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT323 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTORS
ISSUE 1 - DECEMBER 1998
ZUMT860B
ZUMT860C
Partmarking Detail:
ZUMT860B T2B
ZUMT860C T22
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
-50
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
VCBO
VCES
VCEO
VEBO
IC
-50
V
-45
V
-5
V
-100
mA
mA
mA
mW
°C
IEM
-200
Base Current
IBM
-200
Power Dissipation at Tamb=25°C
Ptot
330
Operating and Storage
Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector Cut-Off Current ICBO
-15
-4
nA
µA
VCB = -30V
V
CB = -30V, Tamb=150°C
Collector-Emitter
VCE(sat)
-75
-250
-650
-600
mV
mV
mV
mV
IC=-10mA, IB=-0.5mA
IC=-100mA, IB=-5mA
IC=-10mA*
Saturation Voltage
-250
-300
Base-Emitter
Saturation Voltage
VBE(sat)
VBE
-700
-850
IC=-10mA ,IB=-0.5mA
IC=-100mA,IB=-5mA
Base-Emitter Voltage
-580
-650
-750
-820
mV
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC = 11mA, VCE = 1V at constant base current.
ZUMT860B
ZUMT860C
TYPICAL CHARACTERISTICS
1.2
1.2
+25° C
IC/IB=10
0.8
0.8
IC/IB=10
IC/IB=20
IC/IB=50
-55°C
+25°C
+100°C
+150°C
0.4
0
0.4
0
1m
10m
100m
1
1m
10m
100m
1
IC - Collector Current (A)
IC - Collector Current (A)
VCE(sat) v IC
VCE(sat) v IC
500
250
0
VCE=5V
1.0
0.5
0
IC/IB=10
+100°C
+25°C
-55°C
-55°C
+25°C
+100°C
+150°C
1m
10m
100m
1
1m
10m
100m
1
IC - Collector Current (A)
IC - Collector Current (A)
hFE v IC
VBE(sat) v IC
VCE=5V
1.0
0.5
0
-55°C
+25°C
+100°C
1m
10m
100m
1
IC - Collector Current (A)
VBE(on) v IC
ZUMT860B
ZUMT860C
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Noise Figure
N
-
1
1
–
4
3
dB
dB
V
CB = -5V, IC=-200µA,
RG=2kΩ, f=1kHz,
∆f=200Hz
–
–
V
CB = -5V, IC=-200µA,
RG=2kΩ, f=30Hz to 15kHz
at -3dB points
Equivalent Noise Voltage
Dynamic
en
110 nV
V
CB = -5V, IC=-200µA,
RG=2kΩ, f=10Hz to 50Hz
at -3dB points
hie
hre
hfe
hoe
hFE
3.2
6
4.5
8.7
2
8.5
15
kΩ
Group B
Characteristics
kΩ
Group C
Group B
Group C
Group B
Group C
Group B
Group C
Group B
x10-4
x10-4
VCE=-5V
Ic=-2mA
f=1kHz
3
240 330
500
900
60
110
450
–
600
30
60
150
290 475
µs
µs
–
Static Forward
Current Ratio
IC=-0.01mA,VCE=-5V
IC=-2mA, VCE=-5V
IC=-100mA,VCE=-5V
IC=-0.01mA, VCE=-5V
IC=-2mA, VCE=-5V
IC=-100mA,VCE=-5V
220
–
–
–
hFE
270
500
–
Group C
420
–
800
–
Transition
Frequency
fT
–
300
–
MHz IC=-10mA,VCE=-5V
f=100MHz
Collector-Base
Capacitance
Cobo
4.5
VCB=-10V, f=1MHz
pF
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