ZUMTQ31A [ZETEX]
NPN SILICON PLANAR VHF/UHF TRANSISTORS; NPN硅平面VHF / UHF晶体管
| 型号： | ZUMTQ31A |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR VHF/UHF TRANSISTORS |
| 文件： | 总1页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT323 NPN SILICON PLANAR
VHF/UHF TRANSISTORS
ISSUE 1 – DECEMBER 1998
ZUMTQ31A
PARTMARKING DETAIL
–
T11
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
30
Collector-Emitter Voltage
Emitter-Base Voltage
15
V
3
100
V
Continuous Collector Current
Base Current
mA
mA
mW
°C
IB
50
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
330
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
30
15
3
V
IC=1.0µA, IE=0
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V
IC=3mA, IB=0*
IE=10µA, IC=0
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
0.01
VCB=15V, IE=0
µA
V
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
0.4
1.0
IC=10mA, IB=1mA
IC=10mA, IB=1mA
IC=3mA, VCE=1V
Base-Emitter
Saturation Voltage
V
Static Forward Current hFE
Transfer Ratio
100
600
Transition
Frequency
fT
MHz
pF
IC=4mA, VCE=10V
f=100MHz
Collector-Base
Capacitance
Cobo
1.7
VCB=10V, f=1MHz
Input Capacitance
Noise Figure
Cibo
N
2.0
6.0
pF
dB
VCB=0.5V, f=1MHz
IC=1mA, VCE=6V
Rs=400Ω, f=60MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
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