ZUMT918 [ZETEX]
NPN SILICON PLANAR VHF/UHF TRANSISTOR; NPN硅平面VHF / UHF晶体管
| 型号： | ZUMT918 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR VHF/UHF TRANSISTOR |
| 文件： | 总1页 (文件大小：23K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT323 NPN SILICON PLANAR
VHF/UHF TRANSISTOR
ISSUE 1 – DECEMBER 1998
ZUMT918
PARTMARKING DETAIL –
T5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
30
Collector-Emitter Voltage
15
V
Emitter-Base Voltage
3
100
V
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
mA
mW
°C
Ptot
330
Tj:Tstg
-55 to +150
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
V(BR)CBO
VCEO(sus)
V(BR)EBO
30
15
3
V
V
V
IC=1µA, IE=0
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
IC=3mA, IB=0*
IE=10µA, IC=0
VCB=15V, IE=0
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current ICBO
0.05
0.4
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
hFE
V
IC=10mA, IB=1mA
IC=10mA, IB=1mA
IC=3mA, VCE=1V
Base-Emitter
Saturation Voltage
1.0
V
Static Forward Current
Transfer Ratio
20
Transition Frequency
fT
600
MHz
IC=4mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
3.0
1.7
pF
pF
VCB=0V, f=1MHz
V
CB=10V, f=1MHz
Input Capacitance
Noise Figure
Cibo
N
1.6
6.0
pF
dB
VEB=0.5V,f=1MHz
CE=6V, IC=1mA
f=60MHz, RG=400Ω
V
Common Emitter
Power Gain
Gpe
15
dB
VCB=12V, IC=6mA
f=200MHz
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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