ZUMT850B [ETC]
Obsolete ; 过时的\n型号: | ZUMT850B |
厂家: | ETC |
描述: | Obsolete
|
文件: | 总3页 (文件大小:27K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SOT323 NPN SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 1 - DECEMBER 1998
ZUMT850B
ZUMT850C
Partmarking Detail:
ZUMT850B - T1B
ZUMT850C - T21
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
VCBO
VCES
VCEO
VEBO
IC
50
50
V
45
5
V
V
100
mA
mA
mA
mW
°C
IEM
200
Base Current
IBM
200
Power Dissipation at Tamb=25°C
Ptot
330
Operating and Storage
Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector Cut-Off Current ICBO
15
5
nA
µA
VCB = 30V
V
CB = 30V, Tamb=150°C
Collector-Emitter
VCE(sat)
90
250
600
600
mV
mV
mV
mV
IC= 10mA, IB=0.5mA
IC=100mA, IB=5mA
IC=10mA*
Saturation Voltage
200
300
Base-Emitter
Saturation Voltage
VBE(sat)
VBE
700
900
IC=10mA ,IB=0.5mA
IC=100mA,IB=5mA
Base-Emitter Voltage
580
660
700
770
mV
IC=2mA, VCE=5V
IC=10mA, VCE=5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC = 11mA, VCE = 1V at constant base current.
TYPICAL CHARACTERISTICS
ZUMT850B
ZUMT850C
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Noise Figure
N
-
1
1.4
–
4
3
dB
dB
V
CB = 5V, IC=200µA,
RG=2kΩ, f=1kHz,
∆f=200Hz
–
–
V
CB =5V, IC=200µA,
RG=2kΩ, f=30Hz to 15kHz
at -3dB points
Equivalent Noise Voltage
Dynamic
en
135 nV
V
CB = 5V, IC=200µA,
RG=2kΩ, f=10Hz to 50Hz
at -3dB points
hie
hre
hfe
hoe
hFE
3.2
6
4.5
8.7
2
8.5
15
kΩ
Group B
Characteristics
kΩ
Group C
Group B
Group C
Group B
Group C
Group B
Group C
Group B
x10-4
x10-4
VCE=5V
Ic=2mA
f=1kHz
3
240 330
500
900
60
110
450
–
600
30
60
150
290 450
µs
µs
–
Static Forward
Current Ratio
IC=0.01mA,VCE=5V
IC=2mA, VCE=5V
IC=100mA,VCE=5V
IC=0.01mA, VCE=5V
IC=2mA, VCE=5V
IC=100mA,VCE=5V
220
–
–
–
hFE
270
500
–
Group C
420
–
800
–
Transition
Frequency
fT
–
300
–
MHz IC=10mA,VCE=5V
f=100MHz
Collector-Base
Capacitance
Cobo
2.5 4.5
VCB=10V, f=1MHz
pF
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