ZUMT858B [ETC]
Obsolete ; 过时的\n
| 型号： | ZUMT858B |
| 厂家： | 
ETC |
| 描述： | Obsolete
|
| 文件： | 总3页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT323 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 1 - DECEMBER 1998
ZUMT858B
Partmarking Detail:
- T19
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
-30
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
VCBO
VCES
VCEO
VEBO
IC
-30
V
-30
V
-5
V
-100
mA
mA
mA
mW
°C
IEM
-200
Base Current
IBM
-200
Power Dissipation at Tamb=25°C
Ptot
330
Operating and Storage
Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector Cut-Off Current ICBO
-15
-4
nA
µA
VCB = -30V
V
CB = -30V, Tamb=150°C
Collector-Emitter
VCE(sat)
-75
-300
-600
-600
mV
mV
mV
mV
IC=-10mA, IB=-5mA
IC=-100mA, IB=-5mA
IC=-10mA*
Saturation Voltage
-250
-300
Base-Emitter
Saturation Voltage
VBE(sat)
VBE
-700
-850
IC=-10mA ,IB=-0.5mA
IC=-100mA,IB=-5mA
Base-Emitter Voltage
-600
-650
-750
-820
mV
IC=-2mA, VCE=-5V
IC=-10mA, VCE=-5V
* Collector-Emitter Saturation Voltage at IC = 10mA for the characteristics going through the
operating point IC = 11mA, VCE = 1V at constant base current.
TYPICAL CHARACTERISTICS
ZUMT858B
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
Noise Figure
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
N
-
–
2
–
10 dB
V
CB = -5V, IC=-200µA,
RG=2kΩ, f=1kHz,
∆f=200Hz
–
dB
VCB = -5V, IC=-200µA,
RG=2kΩ, f=30Hz to 15kHz
at -3dB points
Dynamic
hie
hre
hfe
hoe
hFE
3.2
4.5
2
8.5
kΩ
Group B
Group B
Group B
Group B
Group B
Characteristics
VCE=-5V
IC=-2mA
f=1kHz
x10-4
240 330
500
60
–
30
150
290 475
µs
Static Forward
Current Ratio
IC=-0.01mA,VCE=-5V
IC=-2mA, VCE=-5V
IC=-100mA,VCE=-5V
220
–
200
150
–
–
Transition
Frequency
fT
–
MHz IC=-10mA,VCE=-5V
f=100MHz
Collector-Base
Capacitance
Cobo
4.5
VCB=-10V, f=1MHz
pF
相关型号：
©2020 ICPDF网 联系我们和版权申明