STB20NE06T4 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 60V V（ BR ） DSS | 20A I（ D） | TO- 263AB\n
| 型号： | STB20NE06T4 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-263AB
|
| 文件： | 总8页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB20NE06
2
N-CHANNEL 60V - 0.06Ω - 20A D PAK
STripFET POWER MOSFET
V
R
DS(on)
I
TYPE
DSS
D
STB20NE06
60 V
<0.080 Ω
20 A
■
■
■
■
■
TYPICAL RDS(on) = 0.06 Ω
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
o
LOW GATE CHARGE 100 C
3
1
APPLICATION ORIENTED
CHARACTERIZATION
2
D PAK
TO-263
(suffix“T4”)
■
FOR THROUGH-HOLEVERSION CONTACT
SALES OFFICE
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronis unique “Single Feature Size
”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■
■
■
DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
V
Drain-source Voltage (V = 0)
60
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
60
±20
20
V
DGR
GS
V
Gate- source Voltage
V
GS
I
Drain Current (continuos) at T = 25°C
A
D
D
C
I
Drain Current (continuos) at T = 100°C
14
A
C
I
(•)
DM
Drain Current (pulsed)
80
A
P
Total Dissipation at T = 25°C
70
W
tot
C
Derating Factor
0.47
7
W/°C
V/ns
°C
°C
(1)
Peak Diode Recovery voltage slope
Storage Temperature
dv/dt
T
stg
–60 to 175
175
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area.
(1)I
≤20A, di/dt ≤300A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX.
SD
DD
December 2000
1/8
STB20NE06
THERMAL DATA
R
Thermal Resistance Junction-case
Max
Max
Typ
2.14
62.5
0.5
°C/W
°C/W
°C/W
°C
thj-case
R
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
thj-amb
thc-sink
R
T
Maximum Lead Temperature For Soldering Purpose
300
j
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
AR
20
A
(pulse width limited by T max)
j
E
Single Pulse Avalanche Energy
AS
100
mJ
(starting T = 25 °C, I = I , V = 25 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol
Parameter
Drain-source
Test Conditions
= 250 µA = 0
Min.
Typ.
Max.
Unit
V
I
V
GS
60
V
(BR)DSS
D
Breakdown Voltage
I
Zero Gate Voltage
V
V
= Max Rating
1
10
µA
µA
DSS
DS
DS
Drain Current (V = 0)
= Max Rating T = 125 °C
GS
C
I
Gate-body Leakage
V
= ± 20 V
±100
nA
GSS
GS
Current (V = 0)
DS
(*)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
Gate Threshold Voltage
V
V
= V
I
I
= 250 µA
2
GS(th)
DS(on)
DS
GS
GS
D
D
I
Static Drain-source On Resis-
tance
= 10 V
= 10 A
0.060
0.080
Ω
I
On State Drain Current
V
V
> I
x R
DS(on)max
20
A
D(on)
DS
GS
D(on)
= 10 V
DYNAMIC
Symbol
Parameter
Test Conditions
x R I =10A
Min.
Typ.
Max.
Unit
(*)
g
fs
Forward Transconductance
V
V
>I
5
9
S
DS D(on)
DS(on)max D
C
oss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitances
= 25V f = 1 MHz
V = 0
GS
900
125
35
pF
pF
pF
iss
DS
C
C
rss
2/8
STB20NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time Rise Time
V
= 30 V
I
D
GS
= 10 A
= 10 V
20
45
ns
ns
d(on)
DD
t
R
G
= 4.7 Ω
V
r
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
=48V I =20A
V =10V
GS
25
10
6
34
nC
nC
nC
g
DD
D
Q
gs
Q
gd
SWITCHING OFF
Symbol
Parameter
Test Conditions
= 48 V
Min.
Min.
Typ.
Max.
Unit
t
Off-voltage Rise Time
Fall Time
Cross-over Time
V
I
= 20 A
V = 10 V
GS
8
25
37
ns
ns
ns
r(Voff)
DD
D
t
t
R
G
= 4.7
Ω
r
c
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I
Source-drain Current
Source-drain Current (pulsed)
20
80
A
A
SD
(•)
I
SDM
V
(*)
Forward On Voltage
I
I
= 20 A
=20 A
V = 0
GS
1.5
V
SD
SD
SD
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
di/dt = 100 A/µs
T = 150 °C
50
115
4.5
ns
µC
A
rr
Q
V
= 30 V
rr
RRM
DD
j
I
(see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(• )Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
3/8
STB20NE06
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
STB20NE06
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STB20NE06
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits ForResistive
Fig. 4: Gate Charge test Circuit
Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/8
STB20NE06
2
D PAK MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
TYP.
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
7/8
STB20NE06
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
2000 STMicroelectronics - All Rights Reserved
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8/8
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