DMN5L06VAK-7 [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双N沟道增强型场效应晶体管型号: | DMN5L06VAK-7 |
厂家: | DIODES INCORPORATED |
描述: | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
文件: | 总5页 (文件大小:158K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPICE MODEL: DMN5L06VK DMN5L06VAK
DMN5L06VK/VAK
Lead-free Green
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
·
·
·
Dual N-Channel MOSFET
SOT-563
Low On-Resistance
Dim Min
Max
0.30
1.25
1.70
0.50
1.10
1.70
0.60
0.30
0.18
Typ
0.25
1.20
1.60
A
Very Low Gate Threshold Voltage
Low Input Capacitance
A
B
C
D
G
H
K
L
0.15
1.10
1.55
Fast Switching Speed
B
C
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
D
0.90
1.50
0.56
0.10
0.10
1.00
1.60
0.60
0.20
¾
G
H
ESD Protected Up To 2kV
M
Mechanical Data
K
M
·
·
Case: SOT-563
All Dimensions in mm
L
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating 94V-0
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
D2
G1
S1
D2
G1
S1
Terminals: Finish ¾ Matte Tin annealed over
Copper leadframe. Solderable per MIL-STD-202,
Method 208
·
·
·
Marking: Date Code and Type Code, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
G2
S2
D1
S2
G2
D1
ESD protected up to 2kV
DMN5L06VAK
(KAE Type Code)
DMN5L06VK
(KAB Type Code)
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
Value
50
Units
V
V
Drain-Source Voltage
VDGR
50
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
±20
±40
VGSS
V
ID
IDM
280
1.5
mA
A
Drain Current (Note 1)
Continuous
Pulsed
Drain Current (Note 1)
Pd
Total Power Dissipation (Note 1)
150
mW
°C/W
°C
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
833
-55 to +150
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30769 Rev. 2 - 2
1 of 5
DMN5L06VK/VAK
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = 10mA
50
¾
¾
¾
V
@ TC = 25°C
VDS = 50V, VGS = 0V
nA
¾
60
VGS = ±12V, VDS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
1
500
50
µA
nA
nA
IGSS
Gate-Body Leakage
¾
¾
ON CHARACTERISTICS (Note 4)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250mA
0.49
¾
1.2
V
VGS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
VGS = 5.0V, ID = 50mA
¾
¾
¾
¾
¾
¾
3.0
2.5
2.0
RDS (ON)
Static Drain-Source On-Resistance
W
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
ID(ON)
|Yfs|
On-State Drain Current
0.5
200
0.5
1.4
¾
¾
¾
A
mS
V
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
VSD
¾
1.4
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
50
25
pF
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
5.0
1.5
1
8V
VGS = 10V
VDS = 10V
Pulsed
10V
8V
6V
5V
4V
3V
5V
1.2
0.9
0.6
0.3
0
4V
6V
3V
TA = 150°C
TA = 125°C
TA = 85°C
0.1
TA = 25°C
TA = -25°C
TA = -55°C
0.01
3
0
1
2
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DS30769 Rev. 2 - 2
2 of 5
www.diodes.com
DMN5L06VK/VAK
1.0
0.9
0.8
0.7
10
VGS = 10V
Pulsed
VDS = 10V
ID = 1mA
Pulsed
TA = 85°C
TA = 125°C
TA = 150°C
0.6
0.5
0.4
0.3
TA = -55°C
1
TA = 25°C
TA = -25°C
0.2
0.1
0
0.1
0.001
75
100
-25
25
150
-55
50
125
0
0.1
1
0.01
Tch, CHANNEL TEMPERATURE (°C)
ID, DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
10
2.0
1.8
VGS = 5V
Pulsed
TA = 25°C
Pulsed
TA = 85°C
TA = 125°C
1.6
1.4
TA = 150°C
ID = 280mA
ID = 140mA
1.2
1.0
1
TA = -55°C
0.8
0.6
0.4
0.2
0
TA = 25°C
TA = -25°C
0.1
1
0.1
ID, DRAIN CURRENT (A)
0.001
0.01
8
0
2
12 14 16 18
4
6
10
20
VGS, GATE SOURCE VOLTAGE (V)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
3
1
VGS = 10V
Pulsed
VGS = 0V
Pulsed
TA = 150°C
TA = 125°C
2
1
0
0.1
ID = 280mA
ID = 140mA
TA = 85°C
TA = 25°C
0.01
0.001
TA = -25°C
TA = -55°C
-50
50
100
-25
75
125
150
0
25
1
0
0.5
Tch, CHANNEL TEMPERATURE (°C)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
DS30769 Rev. 2 - 2
3 of 5
www.diodes.com
DMN5L06VK/VAK
1
1
VDS = 10V
Pulsed
VGS = 10V
TA = -55°C
0.1
TA = -25°C
TA = 25°C
TA = 85°C
0.1
VGS = 0V
0.01
0.001
TA = 125°C
TA = 150°C
TA = 25°C
Pulsed
0.01
0
0.2
0.4
0.6
1
0.8
0.001
0.01
0.1
1
VSD, SOURCE-DRAIN VOLTAGE (V)
ID, DRAIN CURRENT (A)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
Fig.10 Forward Transfer Admittance
vs. Drain Current
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 Derating Curve - Total
(Note 5)
Ordering Information
Device
Packaging
SOT-563
SOT-563
Shipping
DMN5L06VK-7
DMN5L06VAK-7
3000/Tape & Reel
3000/Tape & Reel
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
(Note 6)
Marking Information
D2
G1
S1
S1
D2
G1
KAB = DMN5L06VK Product Type Marking Code
(See Note 6)
YM = Date Code Marking
Y = Year ex: U = 2007
KAE = DMN5L06VAK Product Type Marking Code
(See Note 6)
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
KAB YM
KAE YM
M = Month ex: 9 = September
S2
G2
D1
G2
S2
D1
Notes:
6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Date Code Key
Year
2006
2007
2008
2009
Code
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30769 Rev. 2 - 2
4 of 5
www.diodes.com
DMN5L06VK/VAK
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30769 Rev. 2 - 2
5 of 5
DMN5L06VK/VAK
www.diodes.com
相关型号:
DMN5L06VK-13
Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6
DIODES
©2020 ICPDF网 联系我们和版权申明