DMN5L06W [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | DMN5L06W |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总4页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN5L06W
N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Lead-free Green
Features
·
·
·
·
·
·
·
·
·
N-Channel MOSFET
SOT-323
Low On-Resistance
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
Very Low Gate Threshold Voltage
Low Input Capacitance
A
D
B
Fast Switching Speed
C
Low Input/Output Leakage
C
B
D
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
“Green” Device (Note 3)
0.65 Nominal
S
G
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
G
H
G
H
K
J
M
J
Mechanical Data
K
0.90
0.25
0.10
0°
·
·
Case: SOT-323
L
D
F
L
Case Material: Molded Plastic, "Green" Molding
M
Compound. UL Flammability Classification Rating 94V-0
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
a
Drain
All Dimensions in mm
Terminals: Finish ¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
·
·
·
Marking: Date Code and Type Code, See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
Gate
Source
EQUIVALENT CIRCUIT
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
Value
50
Units
V
V
Drain-Source Voltage
VDGR
50
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
±20
±40
VGSS
V
ID
IDM
280
1.5
mA
A
Drain Current (Note 1)
Continuous
Pulsed
Drain Current (Note 1)
Pd
Total Power Dissipation (Note 1)
200
mW
°C/W
°C
RqJA
Tj, TSTG
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
625
-55 to +150
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30613 Rev. 3 - 2
1 of 4
DMN5L06W
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = 10mA
VDS = 50V, VGS = 0V
50
¾
¾
¾
¾
¾
¾
V
@ TC
=
25°C
0.1
500
µA
nA
@ TC = 125°C
VGS
= 20V, VDS = 0V
IGSS
Gate-Body Leakage
20
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
V
DS = VGS, ID = 250mA
VGS = 2.7V, ID = 0.2A,
GS = 1.8V, ID = 50mA
0.49
¾
1.2
V
¾
¾
1.6
2.2
3
4
RDS (ON)
Static Drain-Source On-Resistance
W
V
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
ID(ON)
½Yfs½
VSD
On-State Drain Current
0.5
200
0.5
1.0
¾
¾
¾
A
mS
V
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
¾
1.4
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
50
25
pF
pF
pF
V
DS = 25V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
5.0
1.5
1
VDS = 10V
Pulsed
8V
VGS = 10V
8V
6V
5V
4V
3V
10V
3V
1.2
0.9
0.6
6V
5V
TA = 150°C
0.1
4V
TA = 125°C
TA = 85°C
TA = 25°C
0.01
0.3
0
TA = 0°C
TA = -25°C
TA = -55°C
0.001
4
2
3
1
5
0
3.5
2.5
1.5
2
3
1
0.5
0
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.8
10
VDS = 10V
ID = 1mA
Pulsed
VGS = 10V
Pulsed
0.7
0.6
TA = 85°C
TA = 125°C
TA = 150°C
0.5
0.4
0.3
0.2
1
TA = -55°C
TA = 25°C
TA = 0°C
TA = -25°C
0.1
0
0.1
0.001
-75 -50
-25
50 75 100 125
150
0
25
0.1
1
0.01
Tch, CHANNEL TEMPERATURE (°C)
ID, DRAIN CURRENT (A)
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
Fig. 4 Static Drain-Source On-Resistance
Vs. Drain Current
DS30613 Rev. 3 - 2
2 of 4
www.diodes.com
DMN5L06W
8
7
10
VGS = 5V
Pulsed
TA = 25°C
Pulsed
TA = 85°C
TA = 125°C
6
5
4
3
2
TA = 150°C
1
TA = -55°C
TA = 25°C
TA = 0°C
TA = -25°C
ID = 280mA
1
0
ID = 140mA
0.1
1
0.1
0.001
0.01
5
0
10
15
20
VGS, GATE SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
1
2.5
VGS = 0V
Pulsed
VGS = 10V
Pulsed
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
TA = 150°C
0.1
ID = 280mA
TA = 125°C
ID = 140mA
TA = 85°C
0.01
TA = 25°C
TA = -25°C
0.7
0.5
TA = -55°C
0.001
-50
50
100
-25
75
125
150
0
25
1
0
0.5
Tch, CHANNEL TEMPERATURE (°C)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Static Drain-Source On-State Resistance
vs. Channel Temperature
Fig. 8 Reverse Drain Current
vs. Source-Drain Voltage
DS30613 Rev. 3 - 2
3 of 4
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DMN5L06W
1
1
TA = -55°C
VDS = 10V
Pulsed
TA = -25°C
VGS = 10V
0.1
TA = 0°C
0.1
VGS = 0V
TA = 25°C
0.01
0.001
TA = 85°C
TA = 125°C
TA = 25°C
Pulsed
TA = 150°C
0.01
0
0.5
1
0.001
0.01
0.1
1
VSD, SOURCE-DRAIN VOLTAGE (V)
ID, DRAIN CURRENT (A)
Fig. 9 Reverse Drain Current
vs. Source-Drain Voltage
Fig.10 Forward Transfer Admittance
vs. Drain Current
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (°C)
Fig. 11, Derating Curve - Total
(Note 5)
Ordering Information
Device
Packaging
Shipping
DMN5L06W-7
SOT-323
3000/Tape & Reel
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K5L = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
M = Month ex: 9 = September
K5L YM
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
5
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
6
7
8
9
O
N
D
DS30613 Rev. 3 - 2
4 of 4
DMN5L06W
www.diodes.com
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