DMN600V [DIODES]
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双N沟道增强型场效应晶体管
| 型号： | DMN600V |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：320K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN600V
DUAL N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
·
Dual N-Channel MOSFET
Low On-Resistance
SOT-563
Low Gate Threshold Voltage
Low Input Capacitance
Dim Min
Max
0.30
1.25
1.70
0.50
1.10
1.70
0.60
0.30
0.18
Typ
0.25
1.20
1.60
A
A
B
C
D
G
H
K
L
0.15
1.10
1.55
Fast Switching Speed
Low Input/Output Leakage
B
C
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)
0.90
1.50
0.56
0.10
0.10
1.00
1.60
0.60
0.20
0.11
D
G
SEE NOTE 1
Mechanical Data
M
K
·
·
Case: SOT-563
M
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
H
All Dimensions in mm
L
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals Connections: See Diagram
D2
G1
S1
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
·
Terminals: Lead bearing terminal plating available. See
Ordering information Page 2, Note 6
S2
G2
D1
·
·
·
Marking: See Page 2
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VDSS
Value
60
Units
V
V
Drain-Source Voltage
VDGR
60
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage (Note 3)
Continuous
Pulsed
±20
±40
VGSS
V
ID
IDM
Pd
280
1.5
mA
A
Drain Current (Note 3)
Continuous
Pulsed
Drain Current (Note 3)
Total Power Dissipation
150
mW
°C/W
°C
R
qJA
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
833
Tj, TSTG
-55 to +150
Notes: 1. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. No purposefully added Lead.
DS30673 Rev. 1 - 5
1 of 3
DMN600V
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ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
VGS = 0V, ID = 10mA
BVDSS
IDSS
60
¾
¾
70
¾
¾
¾
V
@ TC = 25°C
@ TC = 85°C
25
250
VDS = 50V, VGS = 0V
VGS = ±20V, VDS = 0V
nA
nA
IGSS
Gate-Body Leakage
±100
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
1.0
¾
2.5
V
VGS = 5V, ID = 0.05A,
VGS = 10V, ID = 0.5A, Tj = 125°C
¾
¾
¾
¾
7.5
13.5
RDS (ON)
Satic Drain-Source On-Resistance
W
VGS = 10V, VDS = 7.5V
VDS = 10V, ID = 0.2A
ID(ON)
gFS
On-State Drain Current
0.5
80
1.0
¾
A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
¾
¾
mS
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
50
25
pF
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
5.0
VDD = 30V, ID = 0.2A,
RL = 150W, VGEN = 10V,
RGEN = 25W
tD(ON)
¾
¾
¾
¾
20
20
ns
ns
tD(OFF)
Turn-Off Delay Time
(Note 5)
Ordering Information
Device
Packaging
Shipping
DMN600V-7
SOT-563
3000/Tape & Reel
Notes: 4. Short duration test pulse used to minimize self-heating effect.
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
6. "-L" suffix on part number indicates Pb/Sn terminal plating. "-L" version is a Non Lead-Free, Non RoHS-compliant device.
Marking Information
D2
G1
S1
KBS = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: S = 2005
KBS YM
M = Month ex: 9 = September
S2
G2
D1
Date Code Key
Year
2005
2006
2007
2008
2009
Code
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30673 Rev. 1 - 5
2 of 3
DMN600V
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250
200
150
100
50
0
-50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1, Derating Curve - Total
DS30673 Rev. 1 - 5
3 of 3
www.diodes.com
DMN600V
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