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DMN5L06WK-7 [DIODES]

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
DMN5L06WK-7
型号： DMN5L06WK-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总5页 (文件大小：134K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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SPICE MODEL: DMN5L06WK  
DMN5L06WK  
Lead-free Green  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT  
TRANSISTOR  
Features  
·
·
·
·
·
·
·
·
·
Low On-Resistance: RDS(ON)  
A
SOT-323  
Very Low Gate Threshold Voltage  
Low Input Capacitance  
D
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
Fast Switching Speed  
C
B
B
Low Input/Output Leakage  
G
S
Lead Free By Design/RoHS Compliant (Note 2)  
ESD Protected Up To 2kV  
C
G
H
D
0.65 Nominal  
"Green" Device (Note 4)  
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
Qualified to AEC-Q101 standards for High Reliability  
K
J
M
G
H
L
D
E
J
Mechanical Data  
K
0.90  
0.25  
0.10  
0°  
Drain  
·
·
Case: SOT-323  
L
Case Material: Molded Plastic, “Green” Molding  
Compound. UL Flammability Classification Rating 94V-0  
M
a
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
All Dimensions in mm  
Terminals: Finish ¾ Matte Tin annealed over Alloy 42  
Gate  
leadframe. Solderable per MIL-STD-202, Method 208  
ESD protected up to 2kV  
·
·
·
·
Terminal Connections: See Diagram  
Marking: See Last Page  
Gate  
Protection  
Diode  
Source  
Ordering & Date Code Information: See Last Page  
Weight: 0.006 grams (approximate)  
EQUIVALENT CIRCUIT  
@ TA = 25°C unless otherwise specified  
Characteristic  
Maximum Ratings  
Symbol  
VDSS  
Value  
50  
20  
Units  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current (Note 1)  
VGSS  
300  
800  
Continuous  
Pulsed (Note 3)  
ID  
mA  
Pd  
Total Power Dissipation (Note 1)  
200  
625  
mW  
RqJA  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
°C/W  
Tj, TSTG  
-65 to +150  
°C  
Note:  
1. Device mounted on FR-4 PCB.  
2. No purposefully added lead.  
3. Pulse width £10mS, Duty Cycle £1%.  
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
DS30928 Rev. 2 - 2  
1 of 5  
DMN5L06WK  
www.diodes.com  
ã Diodes Incorporated  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
BVDSS  
IDSS  
V
GS = 0V, ID = 10mA  
50  
¾
¾
¾
V
@ TC = 25°C  
VDS = 50V, VGS = 0V  
nA  
¾
60  
VGS  
VGS  
VGS  
=
=
=
12V, VDS = 0V  
10V, VDS = 0V  
5V, VDS = 0V  
1
500  
50  
µA  
nA  
nA  
IGSS  
Gate-Body Leakage  
¾
¾
ON CHARACTERISTICS (Note 5)  
VGS(th)  
Gate Threshold Voltage  
VDS = VGS, ID = 250mA  
0.49  
¾
1.2  
V
VGS = 1.8V, ID = 50mA  
¾
¾
¾
¾
¾
¾
3.0  
2.5  
2.0  
V
V
GS = 2.5V, ID = 50mA  
GS = 5.0V, ID = 50mA  
RDS (ON)  
Static Drain-Source On-Resistance  
W
VGS = 10V, VDS = 7.5V  
VDS =10V, ID = 0.2A  
VGS = 0V, IS = 115mA  
ID(ON)  
|Yfs|  
On-State Drain Current  
0.5  
200  
0.5  
1.4  
¾
¾
¾
A
mS  
V
Forward Transconductance  
Source-Drain Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VSD  
¾
1.4  
Ciss  
Coss  
Crss  
¾
¾
¾
¾
¾
¾
50  
25  
pF  
pF  
pF  
V
DS = 25V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
5.0  
Notes:  
5. Short duration test pulse used to minimize self-heating effect.  
1.5  
1
8V  
4V  
VGS = 10V  
10V  
VDS = 10V  
Pulsed  
8V  
6V  
5V  
4V  
3V  
5V  
1.2  
0.9  
0.6  
0.3  
0
6V  
3V  
TA = 150°C  
TA = 125°C  
TA = 85°C  
0.1  
TA = 25°C  
TA = -25°C  
TA = -55°C  
0.01  
3
0
1
2
3
4
5
0
1
2
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Typical Output Characteristics  
VGS, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristics  
DS30928 Rev. 2 - 2  
2 of 5  
www.diodes.com  
DMN5L06WK  
1.0  
0.9  
0.8  
0.7  
10  
VGS = 10V  
Pulsed  
VDS = 10V  
ID = 1mA  
Pulsed  
TA = 85°C  
TA = 125°C  
TA = 150°C  
0.6  
0.5  
0.4  
0.3  
TA = -55°C  
1
TA = 25°C  
TA = -25°C  
0.2  
0.1  
0
0.1  
0.001  
75  
100  
-25  
25  
150  
-55  
50  
125  
0
0.1  
1
0.01  
Tch, CHANNEL TEMPERATURE (°C)  
ID, DRAIN CURRENT (A)  
Fig. 3 Gate Threshold Voltage  
vs. Channel Temperature  
Fig. 4 Static Drain-Source On-Resistance  
vs. Drain Current  
10  
2.0  
1.8  
VGS = 5V  
Pulsed  
TA = 25°C  
Pulsed  
TA = 85°C  
TA = 125°C  
1.6  
1.4  
TA = 150°C  
ID = 280mA  
ID = 140mA  
1.2  
1.0  
1
TA = -55°C  
0.8  
0.6  
0.4  
0.2  
0
TA = 25°C  
TA = -25°C  
0.1  
1
0.1  
ID, DRAIN CURRENT (A)  
0.001  
0.01  
8
0
2
12 14 16 18  
4
6
10  
20  
VGS, GATE SOURCE VOLTAGE (V)  
Fig. 5 Static Drain-Source On-Resistance  
vs. Drain Current  
Fig. 6 Static Drain-Source On-Resistance  
vs. Gate-Source Voltage  
1
3
VGS = 10V  
Pulsed  
VGS = 0V  
Pulsed  
TA = 150°C  
TA = 125°C  
2
1
0
0.1  
ID = 280mA  
ID = 140mA  
TA = 85°C  
TA = 25°C  
0.01  
TA = -25°C  
TA = -55°C  
0.001  
-50  
50  
100  
-25  
75  
125  
150  
0
25  
1
0
0.5  
Tch, CHANNEL TEMPERATURE (°C)  
VSD, SOURCE-DRAIN VOLTAGE (V)  
Fig. 7 Static Drain-Source On-State Resistance  
vs. Channel Temperature  
Fig. 8 Reverse Drain Current  
vs. Source-Drain Voltage  
DS30928 Rev. 2 - 2  
3 of 5  
www.diodes.com  
DMN5L06WK  
1
1
VDS = 10V  
Pulsed  
VGS = 10V  
TA = -55°C  
0.1  
TA = -25°C  
TA = 25°C  
TA = 85°C  
0.1  
VGS = 0V  
0.01  
0.001  
TA = 125°C  
TA = 150°C  
TA = 25°C  
Pulsed  
0.01  
0
0.2  
0.4  
0.6  
1
0.8  
0.001  
0.01  
0.1  
1
VSD, SOURCE-DRAIN VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Fig. 9 Reverse Drain Current  
vs. Source-Drain Voltage  
Fig.10 Forward Transfer Admittance  
vs. Drain Current  
250  
200  
150  
100  
50  
0
R
0JA = 625 °C/W  
-50  
0
50  
100  
150  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 11 Derating Curve - Total  
(Note 6)  
Ordering Information  
Device  
Packaging  
Shipping  
DMN5L06WK-7  
SOT-323  
3000/Tape & Reel  
Notes:  
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
DS30928 Rev. 2 - 2  
4 of 5  
DMN5L06WK  
www.diodes.com  
Marking Information  
DAB = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: T = 2006  
M = Month ex: 9 = September  
DAB  
Date Code Key  
Year  
2006  
2007  
2008  
2009  
Code  
T
U
V
W
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further  
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither  
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will  
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.  
LIFE SUPPORT  
DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe  
PresidentofDiodesIncorporated.  
DS30928 Rev. 2 - 2  
5 of 5  
DMN5L06WK  
www.diodes.com  

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