DMN5_10 [DIODES]

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; 双N沟道增强型场效应晶体管
DMN5_10
型号: DMN5_10
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
双N沟道增强型场效应晶体管

晶体 晶体管 场效应晶体管
文件: 总6页 (文件大小:168K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DMN5/L06VK/L06VAK/010VAK  
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
Dual N-Channel MOSFET  
Low On-Resistance  
Very Low Gate Threshold Voltage, 1.0V max  
Low Input Capacitance  
Fast Switching Speed  
Case: SOT-563  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminal Connections: See Diagram  
Terminals: Finish – Matte Tin annealed over Copper leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 5  
Ordering Information: See Page 5  
Weight: 0.006 grams (approximate)  
Low Input/Output Leakage  
Ultra-Small Surface Mount Package  
Lead Free By Design/RoHS Compliant (Note 2)  
Halogen and Antimony Free  
"Green" Device (Note 3)  
ESD Protected up to 2kV  
SOT-563  
D2  
G1  
S1  
D2  
S1  
G1  
S2  
G2  
D1  
G2  
S2  
D1  
DMN5L06VK  
DMN5L06VAK  
DMN5010VAK  
TOP VIEW  
ESD protected up to 2kV  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain Source Voltage  
Symbol  
Value  
50  
Unit  
V
VDSS  
VDGR  
50  
V
Drain-Gate Voltage RGS 1.0MΩ  
Gate-Source Voltage  
Continuous  
Pulsed  
±20  
±40  
V
VGSS  
ID  
IDM  
Drain Current (Note 1)  
Continuous  
Pulsed  
280  
1.5  
mA  
A
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
PD  
Rθ  
Value  
250  
Unit  
mW  
°C/W  
°C  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
500  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 6  
www.diodes.com  
January 2010  
© Diodes Incorporated  
DMN5/L06VK/L06VAK/010VAK  
Document number: DS30769 Rev. 8 - 2  
DMN5/L06VK/L06VAK/010VAK  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
50  
V
BVDSS  
IDSS  
60  
VGS = 0V, ID = 10μA  
VDS = 50V, VGS = 0V  
nA  
@ TC = 25°C  
V
GS = ±12V, VDS = 0V  
VGS = ±10V, VDS = 0V  
GS = ±5V, VDS = 0V  
1
500  
50  
µA  
nA  
nA  
Gate-Body Leakage  
IGSS  
V
ON CHARACTERISTICS (Note 4)  
Gate Threshold Voltage  
0.49  
1.0  
V
VGS(th)  
VDS = VGS, ID = 250μA  
VGS = 1.8V, ID = 50mA  
VGS = 2.5V, ID = 50mA  
VGS = 5.0V, ID = 50mA  
VGS = 10V, VDS = 7.5V  
VDS =10V, ID = 0.2A  
VGS = 0V, IS = 115mA  
0.5  
200  
0.5  
1.4  
3.0  
2.5  
2.0  
Static Drain-Source On-Resistance  
RDS (ON)  
Ω
On-State Drain Current  
A
mS  
V
ID(ON)  
|Yfs|  
1.4  
Forward Transconductance  
Source-Drain Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VSD  
50  
25  
pF  
pF  
pF  
Ciss  
Coss  
Crss  
V
DS = 25V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
5.0  
Notes:  
4. Short duration pulse test used to minimize self-heating effect.  
VGS, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Typical Transfer Characteristics  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Typical Output Characteristics  
2 of 6  
www.diodes.com  
January 2010  
© Diodes Incorporated  
DMN5/L06VK/L06VAK/010VAK  
Document number: DS30769 Rev. 8 - 2  
DMN5/L06VK/L06VAK/010VAK  
10  
1
0
0
75  
100  
-25  
25  
50  
125 150  
-50  
0
ID, DRAIN CURRENT (A)  
Tch, CHANNEL TEMPERATURE (°C)  
Fig. 4 Static Drain-Source On-Resistance  
vs. Drain Current  
Fig. 3 Gate Threshold Voltage  
vs. Channel Temperature  
10  
TA = 25  
Pulsed  
°C  
ID = 280mA  
1
ID, DRAIN CURRENT (A)  
VGS, GATE SOURCE VOLTAGE (V)  
Fig. 5 Static Drain-Source On-Resistance  
vs. Drain Current  
Fig. 6 Static Drain-Source On-Resistance  
vs. Gate-Source Voltage  
V
= 10V  
GS  
Pulsed  
I
= 280mA  
D
TA, AMBIENT TEMPERATURE (°C)  
Fig. 7 Static Drain-Source On-State Resistance  
vs. Ambient Temperature  
3 of 6  
www.diodes.com  
January 2010  
© Diodes Incorporated  
DMN5/L06VK/L06VAK/010VAK  
Document number: DS30769 Rev. 8 - 2  
DMN5/L06VK/L06VAK/010VAK  
1
ID, DRAIN CURRENT (A)  
Fig.10 Forward Transfer Admittance  
vs. Drain Current  
250  
200  
150  
100  
50  
0
-50  
0
50  
TA, AMBIENT TEMPERATURE (  
Fig. 11 Derating Curve - Total  
100  
150  
°
C)  
4 of 6  
www.diodes.com  
January 2010  
© Diodes Incorporated  
DMN5/L06VK/L06VAK/010VAK  
Document number: DS30769 Rev. 8 - 2  
DMN5/L06VK/L06VAK/010VAK  
Ordering Information (Note 5)  
Part Number  
DMN5L06VK-7  
DMN5L06VAK-7  
DMN5010VAK-7  
Case  
Packaging  
SOT-563  
SOT-563  
SOT-563  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information (Note 6)  
DMN5010VAK  
DMN5L06VAK  
DMN5L06VK  
S1  
G1  
S1  
D2  
D2  
G1  
KAB= DMN5L06VK Product Type  
Marking Code (See Note 6)  
YM = Date Code Marking  
xxx = Product Type Marking Code:  
KAE or KAC (See Note 6)  
YM = Date Code Marking  
KAB YM  
xxx YM  
Y
= Year (ex: T = 2006)  
Y
= Year (ex: T = 2006)  
M
= Month ex: 9 = September  
M
= Month ex: 9 = September  
S2  
G2  
G2  
S2  
D1  
D1  
Notes:  
6. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).  
Date Code Key  
Year  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
Package Outline Dimensions  
A
SOT-563  
Dim Min  
Max  
Typ  
B
C
A
B
C
D
G
H
K
L
0.15 0.30 0.20  
1.10 1.25 1.20  
1.55 1.70 1.60  
-
-
0.50  
D
G
0.90 1.10 1.00  
1.50 1.70 1.60  
0.55 0.60 0.60  
0.10 0.30 0.20  
0.10 0.18 0.11  
M
K
M
All Dimensions in mm  
H
L
Suggested Pad Layout  
C2  
C2  
Dimensions Value (in mm)  
Z
G
X
2.2  
1.2  
0.375  
0.5  
C1  
G
Z
Y
C1  
C2  
1.7  
0.5  
Y
X
5 of 6  
www.diodes.com  
January 2010  
© Diodes Incorporated  
DMN5/L06VK/L06VAK/010VAK  
Document number: DS30769 Rev. 8 - 2  
DMN5/L06VK/L06VAK/010VAK  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2009, Diodes Incorporated  
www.diodes.com  
6 of 6  
www.diodes.com  
January 2010  
© Diodes Incorporated  
DMN5/L06VK/L06VAK/010VAK  
Document number: DS30769 Rev. 8 - 2  

相关型号:

DMN600V

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

DMN600V-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

DMN6013LFG-13

Small Signal Field-Effect Transistor,
DIODES

DMN6013LFG-7

Small Signal Field-Effect Transistor,
DIODES

DMN6013LFGQ-13

Small Signal Field-Effect Transistor,
DIODES

DMN6013LFGQ-7

Small Signal Field-Effect Transistor,
DIODES

DMN601DMK

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

DMN601DMK-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

DMN601DMK_07

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

DMN601DWK

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

DMN601DWK-7

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

DMN601DWK_07

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES