DMN5L06VK-13 [DIODES]
Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6;
| 型号： | DMN5L06VK-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-6 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN5/L06VK/L06VAK/010VAK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
Dual N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
•
•
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
•
•
•
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected up to 2kV
•
Weight: 0.006 grams (approximate)
Qualified to AEC-Q101 standards for High Reliability
SOT563
D2
G1
S1
D2
S1
G1
S2
G2
D1
G2
S2
D1
DMN5L06VK
DMN5L06VAK
DMN5010VAK
Top View
ESD protected up to 2kV
Ordering Information (Note 4)
Part Number
DMN5L06VK-7
DMN5L06VK-13
DMN5L06VAK-7
DMN5L06VAK-13
DMN5010VAK-7
DMN5010VAK-13
Case
Packaging
SOT563
SOT563
SOT563
SOT563
SOT563
SOT563
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
Marking Information (Note 5)
DMN5010VAK
DMN5L06VAK
DMN5L06VK
S1
G1
S1
D2
D2
G1
KAB= DMN5L06VK Product Type
Marking Code (See Note 4)
YM = Date Code Marking
xxx = Product Type Marking Code:
KAE or KAC (See Note 4)
YM = Date Code Marking
KAB YM
xxx YM
Y
= Year (ex: T = 2006)
Y
= Year (ex: T = 2006)
M
= Month (ex: 9 = September)
M
= Month (ex: 9 = September)
S2
G2
G2
S2
D1
D1
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
T
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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July 2012
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 10 - 2
DMN5/L06VK/L06VAK/010VAK
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Symbol
VDSS
Value
50
Unit
V
50
V
Drain-Gate Voltage RGS ≤ 1.0MΩ
VDGR
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
VGSS
ID
IDM
Drain Current (Note 6)
Continuous
Pulsed
280
1.5
mA
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Symbol
Value
250
Unit
mW
°C/W
°C
PD
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
500
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
50
V
BVDSS
IDSS
⎯
⎯
⎯
60
VGS = 0V, ID = 10µA
VDS = 50V, VGS = 0V
nA
@ TC = +25°C
⎯
V
V
GS = ±12V, VDS = 0V
GS = ±10V, VDS = 0V
1
500
50
µA
nA
nA
Gate-Body Leakage
IGSS
⎯
⎯
VGS = ±5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.49
1.0
V
VGS(th)
⎯
VDS = VGS, ID = 250µA
V
GS = 1.8V, ID = 50mA
VGS = 2.5V, ID = 50mA
GS = 5.0V, ID = 50mA
⎯
⎯
⎯
⎯
⎯
⎯
3.0
2.5
2.0
Static Drain-Source On-Resistance
RDS (ON)
Ω
V
On-State Drain Current
0.5
200
0.5
1.4
⎯
⎯
A
mS
V
ID(ON)
|Yfs|
⎯
⎯
1.4
VGS = 10V, VDS = 7.5V
VDS =10V, ID = 0.2A
VGS = 0V, IS = 115mA
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
VSD
50
25
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 25V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
5.0
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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July 2012
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 10 - 2
DMN5/L06VK/L06VAK/010VAK
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
10
1
0
0
75
100
-25
25
50
125 150
-50
0
ID, DRAIN CURRENT (A)
Tch, CHANNEL TEMPERATURE (°C)
Fig. 4 Static Drain-Source On-Resistance
vs. Drain Current
Fig. 3 Gate Threshold Voltage
vs. Channel Temperature
10
TA = 25
Pulsed
°C
ID = 280mA
1
ID, DRAIN CURRENT (A)
VGS, GATE SOURCE VOLTAGE (V)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
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© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 10 - 2
DMN5/L06VK/L06VAK/010VAK
V
= 10V
GS
Pulsed
I
= 280mA
D
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Static Drain-Source On-State Resistance
vs. Ambient Temperature
1
ID, DRAIN CURRENT (A)
Fig.10 Forward Transfer Admittance
vs. Drain Current
250
200
150
100
50
0
-50
0
50
TA, AMBIENT TEMPERATURE (
Fig. 11 Derating Curve - Total
100
150
°
C)
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July 2012
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 10 - 2
DMN5/L06VK/L06VAK/010VAK
Package Outline Dimensions
A
SOT563
Dim Min
Max
Typ
B
C
A
B
C
D
G
H
K
L
0.15 0.30 0.20
1.10 1.25 1.20
1.55 1.70 1.60
D
G
-
-
0.50
0.90 1.10 1.00
1.50 1.70 1.60
0.55 0.60 0.60
0.10 0.30 0.20
0.10 0.18 0.11
M
K
M
All Dimensions in mm
H
L
Suggested Pad Layout
C2
C2
Dimensions Value (in mm)
Z
G
2.2
1.2
X
Y
0.375
0.5
C1
G
Z
C1
C2
1.7
0.5
Y
X
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July 2012
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 10 - 2
DMN5/L06VK/L06VAK/010VAK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
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July 2012
© Diodes Incorporated
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 10 - 2
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