DMN3730UFB-7 [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET; 30V N沟道增强型MOSFET
| 型号： | DMN3730UFB-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
DMN3730UFB
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
0.5mm ultra low profile package for thin application
0.6mm2 package footprint, 10 times smaller than SOT23
Low VGS(th), can be driven directly from a battery
Low RDS(on)
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2kV
ID
V(BR)DSS
RDS(on)
TA = 25°C
0.9A
0.7A
460mΩ @ VGS= 4.5V
560mΩ @ VGS= 2.5V
30V
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
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•
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Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
•
•
Load switch
Portable applications
Power Management Functions
•
Weight: 0.001 grams (approximate)
Drain
DFN1006-3
Bottom View
Body
Diode
S
Gate
D
Gate
Protection
Diode
G
Source
ESD PROTECTED TO 2kV
Top View
Equivalent Circuit
Internal Schematic
Ordering Information (Note 3)
Part Number
DMN3730UFB-7
Marking
NE
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NE = Product Type Marking Code
Dot Denotes Drain Side
NE
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October 2010
© Diodes Incorporated
DMN3730UFB
Document number: DS35018 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN3730UFB
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
(Note 5)
Symbol
VDSS
Value
30
Unit
V
±8
VGSS
0.91
0.73
0.75
3
ID
Continuous Drain Current
VGS = 4.5V
A
A
TA =70°C (Note 5)
(Note 4)
Pulsed Drain Current
(Note 6)
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
0.69
0.47
180
258
Unit
(Note 5)
(Note 4)
(Note 5)
(Note 4)
Power Dissipation
W
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
°C
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
30
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 10μA
VDS = 30V, VGS = 0V
VGS = ±8V, VDS = 0V
1
3
μA
μA
-
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
0.45
-
-
-
0.95
460
560
730
-
V
VGS(th)
VDS = VGS, ID = 250μA
V
V
V
GS = 4.5V, ID = 200mA
GS = 2.5V, ID = 100mA
GS = 1.8V, ID = 75mA
mΩ
Static Drain-Source On-Resistance (Note 7)
RDS (ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
40
-
-
mS
V
|Yfs|
VSD
VDS = 3V, ID = 10mA
VGS = 0V, IS = 300mA
0.7
1.2
-
-
-
-
-
-
-
-
-
-
-
64.3
6.1
4.5
70
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
V
DS = 25V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
1.6
0.2
0.2
3.5
2.8
38
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
V
GS = 4.5V, VDS = 15V,
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
I
D = 1A
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDS = 10V, ID = 1A
GS = 10V, RG = 6Ω
V
Turn-Off Delay Time
tD(off)
tf
13
Turn-Off Fall Time
Notes:
4. For a device surface mounted on a minimum recommended pad layout of an FR4 PCB, in still air conditions; the device is measured when operating in
steady-state condition.
5. Same as note 4, except the device measured at t ≤ 10 sec.
6. Same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10μs.
7. Measured under pulsed conditions to minimize self-heating effect. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
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October 2010
© Diodes Incorporated
DMN3730UFB
Document number: DS35018 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN3730UFB
2.0
1.5
2.0
1.5
V
= 10V
GS
V
= 4.5V
V
= 5V
GS
DS
V
= 3.0V
GS
V
= 2.5V
GS
V
= 2.0V
GS
V
= 1.5V
GS
1.0
1.0
0.5
0
0.5
0
T
A
= 150°C
T
= 85°C
A
T
= 125°C
A
T
= 25°C
A
T
= -55°C
A
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
0.8
0.6
0.8
0.6
V
= 4.5V
GS
T
= 150°C
A
T
= 125°C
A
V
= 1.8V
GS
T
= 85°C
A
V
V
= 2.5V
= 4.5V
0.4
0.4
GS
T
= 25°C
GS
A
T = -55°C
A
0.2
0
0.2
0
0
0.4
0.8
1.2
1.6
2
0
0.25
0.5
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
0.75
1
1.25
1.5
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.8
0.6
0.4
1.6
V
= 4.5V
GS
I
= 1.0A
D
1.4
1.2
1.0
V
= 2.5V
GS
I
= 500mA
D
V
= 2.5V
GS
I
= 500mA
D
V
= 4.5V
= 1.0A
GS
I
D
0.2
0
0.8
0.6
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
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October 2010
© Diodes Incorporated
DMN3730UFB
Document number: DS35018 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN3730UFB
1.2
1.0
2.0
1.6
T
= 25°C
A
0.8
0.6
1.2
0.8
I
= 1mA
D
I
= 250µA
D
0.4
0.4
0
0.2
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100
10,000
1,000
100
C
iss
T
= 150°C
= 125°C
A
T
A
C
oss
10
C
rss
T
= 85°C
A
10
1
T
= 25°C
A
f = 1MHz
1
0
5
10
15
20
25
30
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 9 Typical Total Capacitance
8
6
V
= 15V
= 1A
DS
I
D
4
2
0
0
0.5
1
1.5
2
2.5
3
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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October 2010
© Diodes Incorporated
DMN3730UFB
Document number: DS35018 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN3730UFB
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
θJA
θJA
R
= 253°C/W
D = 0.02
θJA
0.01 D = 0.01
P(pk)
T
t
1
t
2
D = 0.005
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
Package Outline Dimensions
DFN1006-3
Dim Min Max Typ
A
A
A1
b1
b2
D
E
e
L1
L2
L3
0.47
0
0.10
0.45
0.53 0.50
0.05 0.03
0.20 0.15
0.55 0.50
A1
D
0.95 1.075 1.00
0.55 0.675 0.60
⎯
0.20
0.20
⎯
b1
0.35
⎯
0.30 0.25
0.30 0.25
e
b2
E
0.40
⎯
All Dimensions in mm
L2
L3
L1
Suggested Pad Layout
C
Dimensions Value (in mm)
Z
G1
G2
X
X1
Y
1.1
0.3
0.2
0.7
0.25
0.4
0.7
X1
G2
X
C
G1
Y
Z
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October 2010
© Diodes Incorporated
DMN3730UFB
Document number: DS35018 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN3730UFB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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October 2010
© Diodes Incorporated
DMN3730UFB
Document number: DS35018 Rev. 2 - 2
相关型号：
DMN3730UFB-7B
Small Signal Field-Effect Transistor, 0.75A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DFN1006-3, 3 PIN
DIODES
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