DMN3900UFA_15 [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET;型号: | DMN3900UFA_15 |
厂家: | DIODES INCORPORATED |
描述: | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
文件: | 总6页 (文件大小:275K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMN3900UFA
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
ID
TA = +25°C
0.65A
0.4mm ultra low profile package for thin application
0.48mm2 package footprint, 16 times smaller than SOT23
Low VGS(th), can be driven directly from a battery
Low RDS(on)
V(BR)DSS
RDS(on)
760m @ VGS = 4.5V
930m @ VGS = 2.5V
1500mΩ @ VGS = 1.8V
30V
0.58A
0.45A
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: X2-DFN0806-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Load switch
Moisture Sensitivity: Level 1 per J-STD-020
Portable applications
Power Management Functions
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
e4
per MIL-STD-202, Method 208
Weight: 0.00043 grams (approximate)
Drain
X2-DFN0806-3
Body
Diode
S
Gate
D
G
Gate
Protection
Diode
Source
Top View
Package Pin Configuration
ESD PROTECTED
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN3900UFA-7B
Marking
NU
Reel size (inches)
Tape width (mm)
Quantity per reel
10,000
7
8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN3900UFA-7B
NU = Product Type Marking Code
NU
Top View
Bar Denotes Gate
and Source Side
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August 2013
© Diodes Incorporated
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
DMN3900UFA
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±8
VGSS
(Note 6)
0.65
0.52
0.55
2.5
ID
TA = +70°C (Note 6)
(Note 5)
Continuous Drain Current
Pulsed Drain Current
V
GS = 4.5V
A
ID
(Note 7)
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
490
Unit
(Note 6)
(Note 5)
(Note 6)
(Note 5)
Power Dissipation
mW
PD
390
255
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
°C
RθJA
327
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
30
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
Gate-Source Leakage
μA
μA
VDS = 30V, VGS = 0V
VGS = ±8V, VDS = 0V
3
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.45
—
—
400
480
617
—
0.95
760
930
1500
—
V
VGS(th)
VDS = VGS, ID = 250μA
V
V
V
GS = 4.5V, ID = 200mA
GS = 2.5V, ID = 100mA
GS = 1.8V, ID = 75mA
Static Drain-Source On-Resistance
mꢀ
RDS(on)
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
40
—
mS
V
|Yfs|
VSD
VDS = 3V, ID = 10mA
VGS = 0V, IS = 300mA
0.7
1.2
—
—
—
—
—
—
—
—
—
—
—
42.2
4.5
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
3,4
Reverse Transfer Capacitance
Gate Resistance
468
0.7
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
V
GS = 4.5V, VDS = 15V,
0.11
0.15
10.5
7.8
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
ID = 200mA
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDS = 10V, ID = 200mA
80.6
23.4
VGS = 4.5V, RG = 6ꢀ
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on FR-4 PCB, with minimum recommended pad layout, except the device measured at t 10 sec.
7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing
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August 2013
© Diodes Incorporated
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
DMN3900UFA
1.0
0.8
1.0
0.8
V
= 5.0V
DS
0.6
0.4
0.6
0.4
T
= 150°C
A
T
= 125°C
0.2
0
0.2
0
A
T
A
= 85°C
A
T
= 25°C
T
= -55°C
A
0
1
2
3
4
0
0.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
1.0
1.5
2.0
2.5
3.0
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
1.6
1.4
1.0
0.8
I
= 200mA
D
1.2
1.0
0.8
0.6
0.4
V
= 1.8V
GS
I
= 100mA
D
0.6
0.4
V
= 2.5V
= 4.5V
GS
V
GS
0.2
0
0.2
0
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
5
6
7
8
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.0
0.9
2.0
1.8
V
= 4.5V
GS
V
= 4.5V
GS
0.8
0.7
0.6
0.5
0.4
I
= 500mA
D
1.6
1.4
1.2
1.0
T
= 150°C
A
T
= 125°C
= 85°C
A
V
= 2.5V
GS
I
= 200mA
D
T
A
T
T
= 25°C
A
0.8
0.6
0.3
0.2
= -55°C
A
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
C)
ID, DRAIN CURRENT (A)
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
DMN3900UFA
1.6
1.4
1.0
0.8
1.2
1.0
0.8
0.6
0.4
V
I
= 2.5V
GS
= 200mA
D
0.6
I
= 1mA
D
V
= 4.5V
GS
I
= 250µA
D
0.4
0.2
0
I
= 500mA
D
0.2
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
0
25
50 75 100 125 150
-50 -25
0
25
50
75 100 125 150
C)
TJ, JUNCTION TEMPERATURE (
Fig. 7 On-Resistance Variation with Temperature
C)
1.0
0.9
100
0.8
0.7
C
iss
0.6
0.5
0.4
0.3
0.2
T
= 25°C
A
10
C
oss
C
rss
0.1
0
f = 1MHz
1
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
Fig. 9 Diode Forward Voltage vs. Current
10
8
6
4
P
= 10µs
W
R
DS(on)
Limited
1
V
I
= 15V
DS
= 200mA
DC
D
P
= 10s
W
0.1
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
2
0
0.01
TJ(max) = 150°C
TA = 25°C
Single Pulse
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Gate Charge
Fig. 12 SOA, Safe Operation Area
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© Diodes Incorporated
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
DMN3900UFA
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RJA(t) = r(t) * R
RJA = 330°C/W
JA
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10 100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A3
A1
A
X2-DFN0806-3
Dim Min Max Typ
0.375 0.40 0.39
Seating Plane
A
A1
A3
b
0
-
0.05 0.02
0.10
D
e
-
0.10 0.20 0.15
0.55 0.65 0.60
0.35 0.45 0.40
0.75 0.85 0.80
0.20 0.30 0.25
D
D1
E
E1
e
K
L (2x)
-
-
-
-
0.35
0.20
b (2x)
K
E
L
0.20 0.30 0.25
All Dimensions in mm
E1
Pin#1
R0.075
D1
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© Diodes Incorporated
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
DMN3900UFA
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Value
(in mm)
0.350
0.200
0.450
0.550
0.375
0.475
1.000
Dimensions
C
X
X1
X2
Y
Y2
X (2x)
Y (2x)
Y1
Y2
C
X2
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
DMN3900UFA
Document number: DS35736 Rev. 4 - 2
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