DMN4009LK3-13 [DIODES]
40V N-CHANNEL ENHANCEMENT MODE MOSFET; 40V N沟道增强型MOSFET
| 型号： | DMN4009LK3-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 40V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
DMN4009LK3
40V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
Features and Benefits
•
•
•
Low on-resistance
ID
V(BR)DSS
RDS(on)
Fast switching speed
T
A = 25°C
“Green” component and RoHS compliant (Note 1)
27.6A
21.5A
8.5mΩ @ VGS= 10V
14mΩ @ VGS= 4.5V
40V
Mechanical Data
•
•
Case: TO252-3L
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
•
•
Backlighting
•
•
•
Marking Information: See Below
Ordering Information: See Below
Weight: 0.33 grams (approximate)
DC-DC Converters
Power management functions
D
D
D
G
S
G
S
Equivalent Circuit
TOP VIEW
PIN OUT -TOP VIEW
Ordering Information (Note 1)
Product
Marking
N4009L
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN4009LK3-13
13
16
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
= Manufacturer’s Marking
N4009L = Product Type Marking Code
YYWW = Date Code Marking
YYWW
YY = Last two digits of year (ex: 09 = 2009)
WW = Week (01-52)
N4009L
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© Diodes Incorporated
DMN4009LK3
Document Revision: 1
A Product Line of
Diodes Incorporated
DMN4009LK3
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
(Note 3)
Symbol
VDSS
Value
40
Unit
V
V
VGS
±20
27.6
22.1
18.0
96.6
13.2
96.6
Continuous Drain current
A
VGS = 10V
TA=70°C (Note 3)
(Note 2)
ID
Pulsed Drain current
(Note 4)
A
A
A
VGS= 10V
IDM
IS
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
(Note 4)
ISM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
4.36
34.8
10.3
82.4
2.19
17.5
28.6
12.1
57.0
Unit
(Note 2)
(Note 3)
(Note 5)
W
mW/°C
Power dissipation
Linear derating factor
PD
(Note 2)
(Note 3)
(Note 5)
(Note 6)
Thermal Resistance, Junction to Ambient
Rθ
JA
°C/W
°C
Thermal Resistance, Junction to Lead
Operating and storage temperature range
0.85
Rθ
JL
-55 to 150
TJ, TSTG
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
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DMN4009LK3
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A Product Line of
Diodes Incorporated
DMN4009LK3
Thermal Characteristics
100
100
10
RDS(on)
RDS(on)
Limited
Limited
10
DC
DC
1
100m
10m
1
1s
1s
100ms
100ms
10ms
10ms
1ms
100m
10m
Tamb=25°C
Tamb=25°C
1ms
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
100µs
10
100µs
10
100m
1
0.1
1
VDS Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Safe Operating Area
Safe Operating Area
60
50
40
30
20
10
0
30
25
20
15
10
5
Tamb=25°C
Tamb=25°C
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
D=0.5
D=0.5
D=0.1
D=0.05
Single Pulse
10 100
D=0.1
D=0.05
Single Pulse
10 100
D=0.2
D=0.2
0
100µ 1m 10m 100m
1
1k
100µ 1m 10m 100m
1
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
4.5
Single Pulse
Tamb=25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50mm x 50mm
2oz FR4
100
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
10
25mm x 25mm
1oz FR4
1
100µ 1m 10m 100m
1
10
100
1k
0
20 40 60 80 100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
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© Diodes Incorporated
DMN4009LK3
Document Revision: 1
A Product Line of
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DMN4009LK3
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
40
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
0.5
ID = 250μA, VGS= 0V
VDS= 40V, VGS= 0V
GS= ±20V, VDS= 0V
μA
nA
IGSS
±100
V
ON CHARACTERISTICS
Gate Threshold Voltage
1.0
3.0
8.5
14
⎯
V
VGS(th)
⎯
⎯
ID= 250μA, VDS= VGS
GS= 10V, ID= 14A
V
Static Drain-Source On-Resistance (Note 7)
mΩ
RDS (ON)
⎯
VGS= 4.5V, ID= 11A
VDS= 15V, ID= 12A
IS= 14A, VGS= 0V
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
35.3
0.82
141
872
S
V
gfs
VSD
trr
⎯
⎯
1.0
⎯
ns
nC
IS= 14A, di/dt= 100A/μs
Qrr
⎯
⎯
2072
338
193
21
pF
pF
pF
nC
nC
nC
nC
ns
Ciss
Coss
Crss
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS= 20V, VGS= 0V
Output Capacitance
f= 1MHz
Reverse Transfer Capacitance
Total Gate Charge
VGS= 4.5V
Total Gate Charge
42
Qg
V
DS= 20V
ID= 14A
Gate-Source Charge
7.3
Qgs
Qgd
tD(on)
tr
V
GS= 10V
Gate-Drain Charge
10.7
7.8
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
18.5
37.3
14.9
ns
V
DD= 20V, VGS= 10V
ID= 14A, RG ≅ 6.0Ω
ns
tD(off)
tf
ns
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
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DMN4009LK3
Document Revision: 1
A Product Line of
Diodes Incorporated
DMN4009LK3
Typical Characteristics
10V
T = 25°C
3.5V
T = 150°C
3V
10V
4V
3.5V
10
1
10
1
2.5V
3V
2V
0.1
0.1
0.01
VGS
2.5V
VGS
1.5V
0.01
0.1
1
0.1
V
1
V
Drain-Source Voltage1(V0 )
Drain-Source Voltage 1(V0 )
DS
DS
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
VGS = 10V
ID = 14A
VDS = 10V
1
0.1
RDS(on)
T = 150°C
T = 25°C
VGS(th)
0.01
1E-3
VGS = VDS
ID = 250uA
1
2
3
4
-50
0
50
150
Tj Junction Temperatur1e00(°C)
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised Curves v Temperature
10
10
T = 25°C
2.5V
VGS
3V
T = 150°C
1
3.5V
1
0.1
0.1
T = 25°C
4V
10V
0.01
Vgs = 0V
0.8
0.01
1E-3
0.2
0.4
0.6
1.0
0.01
0.1
ID Drain C1urrent (A)10
VSD Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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DMN4009LK3
Document Revision: 1
A Product Line of
Diodes Incorporated
DMN4009LK3
Typical Characteristics - continued
3000
2500
10
8
VGS = 0V
f = 1MHz
2000
CISS
6
COSS
1500
CRSS
4
1000
500
0
VDS = 20V
ID = 14A
2
0
0.1
1
10
0
5
10 15 20 25 30 35 40 45
Q - Charge (nC)
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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DMN4009LK3
Document Revision: 1
A Product Line of
Diodes Incorporated
DMN4009LK3
Package Outline Dimensions
DIM
Inches
Millimeters
Min
DIM
Inches
Millimeters
Min Max
Min
0.086
-
Max
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
-
Max
2.39
0.127
0.89
1.14
5.46
0.61
0.584
6.22
-
Min
Max
A
A1
b
2.18
-
e
H
0.090 BSC
2.29 BSC
0.370
0.055
0.410
0.070
9.40
1.40
10.41
1.78
0.020
0.030
0.205
0.018
0.018
0.213
0.205
0.250
0.170
0.508
0.762
5.21
0.457
0.457
5.41
5.21
6.35
4.32
L
b2
b3
c
L1
L2
L3
L4
L5
θ1°
θ°
-
0.108 REF
0.020 BSC
0.035
2.74 REF
0.508 BSC
0.89
0.065
0.040
0.060
10°
1.65
1.016
1.52
10°
c2
D
0.025
0.045
0°
0.635
1.14
0°
D1
E
0.265
-
6.73
-
0°
15°
0°
15°
E1
-
-
-
-
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DMN4009LK3
Document Revision: 1
A Product Line of
Diodes Incorporated
DMN4009LK3
Suggested Pad Layout
6.2
3.0
0.244
0.118
5.8
0.228
1.6
6.17
0.063 0.243
mm
inches
2.58
0.101
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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