DMN4010LFG [DIODES]
Qualified to AEC-Q101 Standards for High Reliability;
| 型号： | DMN4010LFG |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Qualified to AEC-Q101 Standards for High Reliability |
| 文件： | 总7页 (文件大小：220K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN4010LFG
40V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features and Benefits
•
•
Low RDS(ON) – ensures on state losses are minimized
Small, form factor, thermally efficient package enables higher
density end products
ID max
V(BR)DSS
RDS(ON) max
TA = +25°C
11.5A
10.3A
12mΩ @ VGS = 10V
15mΩ @ VGS = 4.5V
40V
•
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
•
•
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
•
•
Case: POWERDI 3333-8
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications such as:
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
•
•
•
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
•
POWERDI 3333-8
D
Pin 1
S
S
S
G
G
D
D
D
D
S
Bottom View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN4010LFG-7
DMN4010LFG-13
Case
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
POWERDI 3333-8
POWERDI 3333-8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
POWERDI 3333-8
N41= Product Type Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 13 = 2013)
WW = Week Code (01 ~ 53)
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DMN4010LFG
Document number: DS36764 Rev. 2 - 2
DMN4010LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
40
Units
V
V
Gate-Source Voltage
20
VGSS
Steady
State
TA = +25°C
11.5
9.2
A
A
ID
TA = +70°C
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C
TA = +70°C
14.2
11.4
t<10s
ID
80
2
A
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
IS
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
27
37
A
IAS
EAS
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
0.93
Units
Total Power Dissipation (Note 5)
W
Steady state
137
89
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
Rθ
JA
t<10s
2.45
52
PD
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Rθ
JA
34
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
3
Rθ
JC
-55 to +150
TJ, TSTG
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
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DMN4010LFG
Document number: DS36764 Rev. 2 - 2
DMN4010LFG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
40
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 32V, VGS = 0V
VGS 20V, VDS = 0V
µA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
100
IGSS
=
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
—
—
—
3.0
12
15
—
V
mΩ
V
VGS(th)
RDS (ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 14A
Static Drain-Source On-Resistance
—
V
GS = 4.5V, ID = 11A
Diode Forward Voltage
—
0.72
VGS = 0V, IS = 14A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
1,810
135
VDS = 20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
112
1.7
17
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 20V, ID = 14A
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
37
Qg
5.6
7.1
5.1
13
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 20V,
36
RG = 6Ω, ID = 14A
Turn-Off Delay Time
tD(off)
tf
13
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12.2
5.4
trr
IF = 3A, di/dt = 100A/µs
IF = 3A, di/dt = 100A/µs
Qrr
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
30.0
30
25
20
15
10
5
V
= 5.0V
DS
V
= 10V
GS
25.0
20.0
15.0
10.0
5.0
V
= 4.5V
GS
V
= 4.0V
GS
V
= 3.5V
GS
T
= 150°C
A
V
= 3.0V
GS
T
= 125°C
A
T
= 85°C
A
T
= 25°C
A
T
= -55°C
A
V
= 2.5V
GS
0
1
0.0
0
0.5
1
1.5
2
2.5
3
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2 Typical Transfer Characteristics
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DMN4010LFG
Document number: DS36764 Rev. 2 - 2
DMN4010LFG
0.1
0.08
0.06
0.04
0.02
0
0.02
0.015
0.01
0.005
0
I
= 14A
D
V
V
= 4.5V
= 10V
GS
GS
I
= 11A
D
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical Transfer Characteristic
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.02
0.015
0.01
0.005
0
1.8
1.6
1.4
1.2
1
V
= 10V
GS
T
= 150°C
= 125°C
A
V
= 10V
GS
I
= 14A
D
T
A
T
= 85°C
A
V
= 4.5V
= 11A
GS
I
D
T
T
= 25°C
A
= -55°C
A
0.8
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
5
10
15
20
25
30
°
C)
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
2.3
0.03
0.025
0.02
0.015
0.01
0.005
0
2
1.7
1.4
1.1
0.8
I
= 1mA
D
V
= 4.5V
= 11A
GS
I
D
I
= 250µA
D
V
= 10V
GS
I
= 14A
D
-50 -25
0
25
50
75 100 125 150
C)
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (
°
TJ, JUNCTION TEMPERATURE (
°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
Figure 7 On-Resistance Variation with Temperature
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DMN4010LFG
Document number: DS36764 Rev. 2 - 2
DMN4010LFG
30
25
20
15
10
5
10000
1000
100
C
iss
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
C
C
oss
rss
T
= 25°C
A
T
= -55°C
A
f = 1MHz
0
10
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 10 Typical Junction Capacitance
Figure 9 Diode Forward Voltage vs. Current
1000
100
10
10
8
R
DS(on)
Limited
V
I
= 20V
DS
= 14A
D
6
DC
P
= 10s
W
1
4
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
TJ(max) = 150°C
TA = 25°C
P
= 1ms
W
0.1
2
P
= 100µs
W
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.01
0
0.1
1
10
100
0
5
10
15
20
25
30
35
40
VDS, DRAIN-SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA(t) = r(t) * Rθ
JA
RθJA = 72°C/W
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
10
100
1000
Figure 13 Transient Thermal Resistance
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DMN4010LFG
Document number: DS36764 Rev. 2 - 2
DMN4010LFG
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
POWERDI®3333-8
Dim Min Max Typ
A
A3
A1
D
E
3.25 3.35 3.30
3.25 3.35 3.30
D
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
D2
L
(4x)
A
A1
A3
b
0.75 0.85 0.80
0.05 0.02
0.203
1
8
4
5
0
Pin 1 ID
E2
−
−
0.27 0.37 0.32
0.20
0.35 0.45 0.40
b2
(4x)
E
b2
L
−
−
L1
e
0.39
0.65
−
−
−
−
−
−
L1
(3x)
Z
0.515
All Dimensions in mm
Z (4x)
e
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Dimensions
Value (in mm)
0.650
0.230
C
G
8
5
4
G1
Y
0.420
3.700
Y2
Y3
G1
Y1
Y1
Y2
Y3
X
2.250
1.850
Y
0.700
2.370
0.420
1
X2
X2
C
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DMN4010LFG
Document number: DS36764 Rev. 2 - 2
DMN4010LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
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DMN4010LFG
Document number: DS36764 Rev. 2 - 2
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