DMN4008LFG-13 [DIODES]
Small Signal Field-Effect Transistor;
| 型号： | DMN4008LFG-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：328K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN4008LFG
40V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features and Benefits
•
•
Low RDS(ON) – ensures on state losses are minimized
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
ID max
TA = +25°C
14.4A
V(BR)DSS
RDS(ON) max
7.5mΩ @ VGS = 10V
10mΩ @ VGS = 4.5V
40V
•
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
12.5A
•
•
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: POWERDI®3333-8
•
•
•
Backlighting
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
Power Management Functions
DC-DC Converters
•
•
•
•
POWERDI®3333-8
D
Pin 1
S
S
S
G
G
D
D
D
D
S
Bottom View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN4008LFG-7
DMN4008LFG-13
Case
Packaging
2000/Tape & Reel
POWERDI®3333-8
POWERDI®3333-8
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N47= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
N47
POWERDI is a registered trademark of Diodes Incorporated
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www.diodes.com
July 2014
© Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
DMN4008LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
40
Units
V
V
Gate-Source Voltage
±20
VGSS
TA = +25°C
A = +70°C
TA = +25°C
A = +70°C
Steady
State
14.4
11.6
A
A
ID
T
Continuous Drain Current (Note 6) VGS = 10V
19.2
15.4
t<10s
ID
IDM
IS
T
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
90
3
A
A
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
38
75
A
IAS
EAS
Avalanche Energy, L = 0.1mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.0
119
66
2.3
Units
W
Total Power Dissipation (Note 5)
PD
RθJA
PD
Steady state
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
t<10s
Steady state
t<10s
53
30
6.1
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJC
-55 to +150
T
J, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
40
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
±100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
1
—
5.5
7
3
V
mꢀ
V
VGS(th)
RDS (ON)
VSD
VDS = VGS, ID = 250μA
—
—
—
—
7.5
10
20
1.1
VGS = 10V, ID = 10A
Static Drain-Source On-Resistance
V
V
GS = 4.5V, ID = 8A
GS = 3.3V, ID = 6A
—
Diode Forward Voltage
0.7
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
3537
257
215
0.9
VDS = 20V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
34
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
74
Qg
V
DS = 20V, ID = 10A
10.2
12.5
8.2
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
14.1
69.7
24.4
Turn-On Rise Time
VGS = 10V, VDS = 20V,
G = 6ꢀ, ID = 10A
Turn-Off Delay Time
R
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
18.5
12.0
trr
IF = 10A, di/dt = 100A/μs
Qrr
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
DMN4008LFG
30.0
27.0
24.0
21.0
18.0
15.0
12.0
9.0
30
27
24
21
18
15
12
9
V
= 5.0V
V
= 10V
GS
DS
V
= 4.5V
GS
V
= 4.0V
GS
V
= 3.0V
GS
V
= 3.5V
GS
T
= 150°C
A
T
= 125°C
A
T
A
= 85°C
A
T
= 25°C
6
6.0
T
= -55°C
A
3.0
V
= 2.5V
3
GS
0
0.0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.014
0.012
0.01
I
= 10.0A
= 8.0A
D
I
D
V
= 3.3V
GS
0.008
0.006
0.004
0.002
V
= 4.5V
= 10V
GS
V
GS
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Transfer Characteristics
1.8
1.6
1.4
1.2
1
0.011
0.01
V
= 10V
GS
T
= 150°C
= 125°C
V
= 10V
A
GS
I
= 10A
D
T
A
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
V
= 4.5V
GS
I
= 8.0A
D
T
= 85°C
A
V
= 3.3V
GS
I
= 6.0A
D
T
T
= 25°C
A
A
= -55°C
0.8
0.6
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN CURRENT (A)
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
POWERDI is a registered trademark of Diodes Incorporated
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© Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
DMN4008LFG
0.018
0.016
0.014
0.012
0.01
2.2
2
V
= 3.3V
GS
I
= 1mA
I
= 6.0A
D
D
1.8
1.6
1.4
1.2
1
V
= 4.5V
GS
I
= 250µA
D
I
= 8.0A
D
0.008
0.006
0.004
0.002
0
V
= 10V
GS
I
= 10A
D
0.8
-50 -25
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation
vs. Ambient Temperature
°
C)
30
27
24
21
10000
1000
100
C
iss
T
= 150°C
A
18
15
12
T
= 125°C
A
T
T
= 85°C
= 25°C
A
A
9
6
T
= -55°C
A
C
oss
3
C
rss
f = 1MHz
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
15
20
25
30
35
40
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
1000
100
10
R
DS(ON)
V
I
= 20V
DS
Limited
= 10A
D
6
DC
P
= 10s
W
4
1
P
= 1s
W
P
= 100ms
W
P
= 10ms
T
T
= 150°C
W
J(max)
2
0.1
0.01
= 25°C
P
= 1ms
A
W
V
= 10V
GS
Single Pulse
DUT on 1 * MRP Board
P
= 100µs
W
0
0
10
20
30
40
50
60
70
80
0.01
0.1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Figure 11 Gate Charge
POWERDI is a registered trademark of Diodes Incorporated
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www.diodes.com
July 2014
© Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
DMN4008LFG
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA(t) = r(t) * Rθ
RθJA = 118°C/W
JA
D = Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.0001
0.001
0.01
0.1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
1
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
POWERDI®3333-8
Dim Min Max Typ
3.25 3.35 3.30
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
A3
D
E
A1
D
D2
L
(4x)
A
A1
A3
b
b2
L
L1
e
Z
0.75 0.85 0.80
0
−
0.05 0.02
0.203
1
8
4
5
Pin 1 ID
E2
−
0.27 0.37 0.32
0.20
0.35 0.45 0.40
b2
(4x)
E
−
−
0.39
0.65
0.515
−
−
−
−
−
−
L1
(3x)
All Dimensions in mm
Z (4x)
e
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
Value (in mm)
0.650
G
C
G
0.230
G1
Y
Y1
Y2
Y3
X
0.420
3.700
2.250
1.850
0.700
2.370
8
5
4
Y2
Y3
G1
Y1
Y
1
X2
0.420
X2
C
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DMN4008LFG
Document number: DS36908 Rev. 2 - 2
DMN4008LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated
6 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN4008LFG
Document number: DS36908 Rev. 2 - 2
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