DMN3020UFDF-13 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMN3020UFDF-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：435K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3020UFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
ID Max
BVDSS
RDS(ON) Max
TC = +25°C
Low Gate Threshold Voltage
19mΩ @ VGS = 4.5V
25mΩ @ VGS = 2.5V
40mΩ @ VGS = 1.8V
120mΩ @ VGS = 1.5V
15A
14A
10A
6A
Fast Switching Speed
ESD Protected Gate
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description
Case: U-DFN2020-6 (Type F)
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Battery Management Application
Power Management Functions
DC-DC Converters
e4
Solderable per MIL-STD-202, Method 208
Weight: 0.007 Grams (Approximate)
U-DFN2020-6 (Type F)
D
S
G
ESD PROTECTED
Gate Protection
Diode
Pin Out
Bottom View
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN3020UFDF-7
DMN3020UFDF-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
2F = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
2F
M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
DMN3020UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±12
V
VGSS
Steady
State
TC = +25°C
15
13
A
A
ID
TC = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) VGS = 4.5V
10.4
8.3
t<5s
ID
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
40
2.2
17
15
A
A
IDM
TA = +25°C
IS
IAS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
EAS
Thermal Characteristics
Characteristic
Symbol
Value
0.73
Unit
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
RθJA
PD
0.47
171
112
2.03
1.30
63
TA = +70°C
Steady State
t<5s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
TA = +25°C
TA = +70°C
Steady State
t<5s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
40
18
°C/W
°C
Thermal Resistance, Junction to Case
Steady State
RθJC
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±10V, VDS = 0V
µA
µA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
±10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.4
—
0.6
16
19
26
32
0.6
1.0
19
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 3.5A
VGS = 1.8V, ID = 2.0A
VGS = 1.5V, ID = 1.0A
VGS = 0V, IS = 1.0A
25
Static Drain-Source On-Resistance
40
120
1.2
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1304
87
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
80
Reverse Transfer Capacitance
Gate Resistance
1.3
15
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Qg
27
Qg
nC
ns
VDS = 15V, ID = 4.5A
2.0
2.1
4.1
4.8
20.5
3.2
7.1
1.7
—
—
—
—
—
—
—
—
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDS = 15V, VGS = 4.5V,
RG = 1Ω, ID = 4.5A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
IF = 1.0A, di/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I and E ratings are based on low frequency and duty cycles to keep T = +25°C.
AS AS
J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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February 2016
© Diodes Incorporated
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
DMN3020UFDF
30.0
25.0
20.0
15.0
10.0
5.0
25
20
15
10
5
VDS = 5V
VGS = 4.5V
VGS = 3.0V
VGS = 2.5V
VGS = 1.8V
VGS = 1.5V
85oC
25oC
125oC
150oC
VGS = 1.2V
-55oC
0
0.0
0.5
0.8
1.1
1.4
1.7
2
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.022
0.02
0.1
0.08
0.06
0.04
0.02
0
ID = 4.5A
VGS = 2.5V
0.018
0.016
0.014
0.012
ID = 2.0A
VGS = 4.5V
0
5
10
15
20
25
30
0
2
4
6
8
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
1.8
1.6
1.4
1.2
1
VGS = 4.5V
VGS = 4.5V, ID = 4.5A
150oC
125oC
85oC
25oC
VGS = 2.5V, ID = 3.5A
-55oC
0.8
0.6
0
5
10
15
20
25
30
-50 -25
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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© Diodes Incorporated
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
DMN3020UFDF
0.035
0.03
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
ID = 1mA
0.025
0.02
VGS = 2.5V, ID = 3.5A
ID = 250µA
0.015
0.01
VGS = 4.5V, ID = 4.5A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
Figure 8. Gate Threshold Variation vs. Temperature
30
25
20
15
10
5
100000
10000
1000
100
VGS = 0V
150oC
125oC
85oC
TA = 85oC
10
TA = 25oC
TA = -55oC
TA = 125oC
TA = 150oC
1
25oC
0
0.1
0
0.3
0.6
0.9
1.2
1.5
0
4
8
12
16
20
VDS, DRAIN-SOURCE VOLTAGE (V)
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
Figure 9. Diode Forward Voltage vs. Current
10000
1000
100
8
6
4
2
0
f=1MHz
Ciss
Coss
Crss
VDS = 15V, ID = 4.5A
10
0
4
8
12
16
20
24
28
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
Qg (nC)
Figure 12. Gate Charge
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February 2016
© Diodes Incorporated
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
DMN3020UFDF
100
10
PW =100µs
RDS(ON) Limited
1
PW =1ms
PW =10ms
PW =100ms
TJ(Max) = 150℃
TA = 25℃
0.1
0.01
PW =1s
PW =10s
Single Pulse
DUT on 1*MRP Board
VGS= 4.5V
DC
10
0.01
0.1
1
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
RθJA(t) = r(t) * RθJA
RθJA = 171℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
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February 2016
© Diodes Incorporated
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
DMN3020UFDF
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57 0.63
0.00 0.05
A3
A1
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
A
Seating Plane
-
-
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a 0.33 0.43
E
E2
E2a
e
1.95 2.05
1.05 1.25
0.65 0.75
0.65 BSC
D2a
E2a
z2
e2
e3
e4
k
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
D2
E
E2
k1
k2
L
0.15 BSC
0.36 BSC
0.225 0.325 0.275
0.20 BSC
k1
e2
L
k
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
All Dimensions in mm
z( 4x)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
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© Diodes Incorporated
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
DMN3020UFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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Copyright © 2016, Diodes Incorporated
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© Diodes Incorporated
DMN3020UFDF
Datasheet number: DS38208 Rev. 2 - 2
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