DMN3020UTS-13 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMN3020UTS-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3020UTS
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Gate Threshold Voltage
ID max
TC = +25°C
15A
BVDSS
RDS(ON) max
Low On-Resistance
ESD Protected Gate
20mΩ @ VGS = 4.5V
25mΩ @ VGS = 2.5V
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
14A
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: TSSOP-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Battery Management Application
Power Management Functions
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Lead
Frame. Solderable per MIL-STD-202, Method 208
Weight: 0.039 grams (Approximate)
D
TSSOP-8
D
D
D
D
S
S
G
S
ESD PROTECTED
Pin1
G
Gate Protection
Diode
S
Top View
Bottom View
Pin Out
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN3020UTS-13
Case
TSSOP-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
8
5
= Manufacturer’s Marking
N3020U = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 17 = 2017)
N3020U
YY
WW = Week (01 to 53)
WW
1
4
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© Diodes Incorporated
DMN3020UTS
Document number: DS39580 Rev. 2 - 2
DMN3020UTS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±12
V
VGSS
Steady
State
TA = +25°C
6.8
5.4
A
A
ID
TA = +70°C
TC = +25°C
TC = +70°C
Continuous Drain Current (Note 7) VGS = 4.5V
Steady
State
15
12
ID
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
A
A
IDM
Continuous Source-Drain Diode Current (Note 7)
IS
ISM
IAS
Pulsed Source-Drain Diode Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 8) L = 0.1mH
A
A
Avalanche Energy (Note 8) L = 0.1mH
mJ
EAS
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
R
Value
0.85
Unit
W
Total Power Dissipation (Note 5)
TA = +25°C
Steady State
TA = +25°C
Steady State
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
150
°C/W
W
JA
1.4
90
PD
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
R
JA
°C/W
°C
17
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±10V, VDS = 0V
µA
µA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
±10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.4
—
—
15
18
25
0.8
1.0
20
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 3.5A
VGS = 1.8V, ID = 2.0A
VGS = 0V, IS = 1.0A
Static Drain-Source On-Resistance
25
50
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1304
87
—
—
—
—
—
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
80
Reverse Transfer Capacitance
Gate Resistance
1.3
15
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Qg
27
Qg
nC
ns
VDS = 15V, ID = 4.5A
2.0
2.1
4.1
4.8
20.5
3.2
7.1
1.7
—
—
—
—
—
—
—
—
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDS = 15V, VGS = 4.5V,
RG = 1Ω, ID = 4.5A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
IF = 1.0A, di/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C .
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMN3020UTS
Document number: DS39580 Rev. 2 - 2
DMN3020UTS
30.0
25.0
20.0
15.0
10.0
5.0
30
25
20
15
10
5
VGS = 2.0V
VGS = 2.5V
VDS = 5.0V
VGS = 1.8V
VGS = 3.0V
VGS = 4.5V
VGS = 6.0V
VGS = 10V
VGS = 1.5V
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
VGS = 1.2V
2.5
0.0
0
0
0.5
1
1.5
2
3
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
60.00
50.00
40.00
30.00
20.00
10.00
0.00
50
VGS = 1.5V
ID = 4.5A
ID = 2.5A
ID = 1.8A
45
40
35
30
25
20
15
10
ID = 1.5A
VGS = 1.8V
VGS = 2.5V
VGS = 4.5V
0
5
10
15
20
0
2
4
6
8
10
12
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
0.04
0.03
0.02
0.01
0
2
1.8
1.6
1.4
1.2
1
VGS = 4.5V, ID = 4.5A
VGS = 2.5V, ID = 3.5A
VGS = 10V
TJ = 150oC
TJ = 125oC
TJ = 85oC
TJ = 25oC
TJ = -55oC
VGS = 1.8V, ID = 2.0A
0.8
0.6
0.4
-50 -25
0
25
50
75 100 125 150
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
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DMN3020UTS
0.04
0.03
0.02
0.01
0
1.2
0.9
0.6
0.3
0
VGS = 1.8V, ID = 1.0A
ID = 1mA
ID = 250µA
VGS = 2.5V, ID = 3.5A
VGS = 4.5V, ID = 4.5A
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
Figure 7. On-Resistance Variation with Temperature
30
25
20
15
10
5
10000
VGS = 0V
f = 1MHz
Ciss
1000
100
10
TJ = 150oC
Coss
TJ = 125oC
TJ = 85oC
Crss
TJ = 25oC
TJ = -55oC
0.9
0
0
0.3
0.6
1.2
0
5
10
15
20
25
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
8
6
4
2
0
100
10
RDS(ON)
Limited
PW = 1ms
PW = 100µs
DC
1
PW = 10s
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on 1*MRP
Board
VDS = 15V, ID = 4.5A
0.1
0.01
PW = 1s
PW = 100ms
PW = 10ms
VGS = 10V
0
4
8
12
Qg (nC)
Figure 11. Gate Charge
16
20
24
28
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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DMN3020UTS
Document number: DS39580 Rev. 2 - 2
DMN3020UTS
1
D=0.9
D=0.5
D=0.3
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
RθJA (t) = r(t) * RθJA
RθJA = 149℃/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
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DMN3020UTS
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TSSOP-8
D
TSSOP-8
Dim Min Max Typ
See Detail C
a
0.09
E
A
1.20
E1
A1 0.05 0.15
A2 0.825 1.025 0.925
b
c
0.19 0.30
0.09 0.20
D
e
E
2.90 3.10 3.025
e
c
0.65
6.40
b
Gauge plane
E1 4.30 4.50 4.425
0.45 0.75 0.60
All Dimensions in mm
a
A2
A1
A
L
L
D
Detail C
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TSSOP-8
Y
Dimensions Value (in mm)
X
X
Y
0.45
1.78
7.72
0.65
4.16
0.20
C3
C1
C1
C2
C3
G
C2
G
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DMN3020UTS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright © 2017, Diodes Incorporated
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