DMN3024LK3 [DIODES]
30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET; 30V TO252 （ DPAK ）的N沟道增强型MOSFET
| 型号： | DMN3024LK3 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：664K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
DMN3024LK3
30V TO252 (DPAK) N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
Features and Benefits
•
•
•
•
Low on-resistance
ID
V(BR)DSS
RDS(on)
Fast switching speed
T
A = 25°C
Low gate drive
14.4A
11.6A
24mΩ @ VGS= 10V
39mΩ @ VGS= 4.5V
“Green” component and RoHS compliant (Note 1)
30V
Mechanical Data
•
•
Case: TO-252 (DPAK)
Description and Applications
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
•
•
Backlighting
DC-DC Converters
Power management functions
•
•
•
Marking Information: See Below
Ordering Information: See Below
Weight: 0.33 grams (approximate)
D
D
D
G
S
G
S
Equivalent Circuit
TOP VIEW
PIN OUT -TOP VIEW
Ordering Information (Note 1)
Product
Marking
N3024L
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN3024LK3-13
13
16
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
= Manufacturer’s Marking
N3024L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
YYWW
N3024L
WW = Week (01-52)
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DMN3024LK3
Document Revision: 1
A Product Line of
Diodes Incorporated
DMN3024LK3
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
(Note 3)
Symbol
VDSS
Value
30
Unit
V
V
VGS
±20
14.4
12.0
9.78
46.5
12
Continuous Drain current
A
V
GS = 10V
TA=70°C (Note 3)
(Note 2)
ID
Pulsed Drain current
(Note 4)
A
A
A
V
GS= 10V
IDM
IS
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
(Note 4)
46.5
ISM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
4.1
32.5
Unit
(Note 2)
(Note 3)
(Note 5)
W
mW/°C
Power dissipation
Linear derating factor
8.9
PD
71.4
2.17
17.4
30.8
14.0
57.6
(Note 2)
(Note 3)
(Note 5)
(Note 6)
Thermal Resistance, Junction to Ambient
Rθ
JA
°C/W
°C
Thermal Resistance, Junction to Lead
Operating and storage temperature range
2.24
Rθ
JL
-55 to 150
TJ, TSTG
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
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DMN3024LK3
Document Revision: 1
A Product Line of
Diodes Incorporated
DMN3024LK3
Thermal Characteristics
RDS(on)
Limit
RDS(on)
Limit
10
10
1
DC
DC
1
100m
10m
1s
100ms
1s
100ms
10ms
100m
10ms
Tamb=25°C
Tamb=25°C
1ms
1ms
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
100µs
10
100µs
10
10m
100m
1
0.1
1
V
Drain-Source Voltage (V)
VDS Drain-Source Voltage (V)
Safe Operating Area
SDaSfe Operating Area
35
30
25
20
15
10
5
Tamb=25°C
60
50
40
30
20
10
0
Tamb=25°C
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
D=0.5
D=0.5
D=0.1
D=0.05
Single Pulse
10 100
D=0.1
D=0.05
D=0.2
D=0.2
Single Pulse
0
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
4.5
Single Pulse
Tamb=25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
50mm x 50mm
2oz FR4
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
10
1
25mm x 25mm
1oz FR4
100µ 1m 10m 100m
1
10
100
1k
0
20 40 60 80 100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
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DMN3024LK3
Document Revision: 1
A Product Line of
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DMN3024LK3
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
30
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
0.5
ID = 250μA, VGS= 0V
VDS= 30V, VGS= 0V
GS= ±20V, VDS= 0V
μA
nA
IGSS
±100
V
ON CHARACTERISTICS
Gate Threshold Voltage
1.0
3.0
0.024
0.039
⎯
V
VGS(th)
⎯
⎯
ID= 250μA, VDS= VGS
GS= 10V, ID= 7.0A
V
Static Drain-Source On-Resistance (Note 7)
Ω
RDS (ON)
⎯
VGS= 4.5V, ID= 6.0A
VDS= 15V, ID= 7.0A
IS= 1.7A, VGS= 0V
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
16.5
0.82
12
S
V
gfs
VSD
trr
⎯
⎯
1.2
ns
nC
⎯
IS= 2.2A, di/dt= 100A/μs
4.8
Qrr
⎯
⎯
608
132
71
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS= 15V, VGS= 0V
Output Capacitance
f= 1MHz
Reverse Transfer Capacitance
Total Gate Charge
12.9
2.5
2.5
2.9
3.3
16
V
DS= 15V, VGS= 10V
Gate-Source Charge
Qgs
Qgd
tD(on)
tr
ID= 7A
Gate-Drain Charge
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
VDD= 15V, VGS= 10V
ID= 1A, RG ≅ 6.0Ω
tD(off)
tf
8
Notes:
7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
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DMN3024LK3
Document Revision: 1
A Product Line of
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DMN3024LK3
Typical Characteristics
10V
VGS
T = 150°C
10V
5V
4V
4V
3.5V
10
1
10
1
3.5V
3V
2.5V
3V
2V
0.1
0.01
0.1
2.5V
VGS
1.5V
T = 25°C
0.01
0.1
1
0.1
V
1
V
Drain-Source Voltage 1(V0 )
Drain-Source Voltage1(V0 )
DS
DS
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
ID = 7A
10
1
VDS = 10V
RDS(on)
T = 150°C
VGS(th)
T = 25°C
VGS = VDS
ID = 250uA
0.1
2
4
-50
0
50
100
150
VGS Gate-Source 3Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
1000
10
2.5V
VGS
T = 25°C
100
T = 150°C
1
3V
10
3.5V
0.1
0.01
1E-3
T = 25°C
1
4V
0.1
4.5V
10V
Vgs = -3V
0.8 1.0
VSD Source-Drain Voltage (V)
0.01
0.01
0.2
0.4
0.6
ID Drain C1urrent (A)10
0.1
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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DMN3024LK3
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A Product Line of
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DMN3024LK3
Typical Characteristics - continued
900
800
700
600
10
9
8
7
6
5
4
3
2
1
0
VGS = 0V
f = 1MHz
ID = 7A
CISS
500
COSS
400
CRSS
300
VDS = 15V
200
100
0
1
10
0
1
2
4
7
8
9 10 11 12 13 14
3 Q - 5Ch6arge (nC)
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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DMN3024LK3
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A Product Line of
Diodes Incorporated
DMN3024LK3
Package Outline Dimensions
DIM
Inches
Millimeters
Min
DIM
Inches
Millimeters
Min Max
Min
0.086
-
Max
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
-
Max
2.39
0.127
0.89
1.14
5.46
0.61
0.584
6.22
-
Min
Max
A
A1
b
2.18
-
e
H
0.090 BSC
2.29 BSC
0.370
0.055
0.410
0.070
9.40
1.40
10.41
1.78
0.020
0.030
0.205
0.018
0.018
0.213
0.205
0.250
0.170
0.508
0.762
5.21
0.457
0.457
5.41
5.21
6.35
4.32
L
b2
b3
c
L1
L2
L3
L4
L5
θ1°
θ°
-
0.108 REF
0.020 BSC
0.035
2.74 REF
0.508 BSC
0.89
0.065
0.040
0.060
10°
1.65
1.016
1.52
10°
c2
D
0.025
0.045
0°
0.635
1.14
0°
D1
E
0.265
-
6.73
-
0°
15°
0°
15°
E1
-
-
-
-
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DMN3024LK3
Document Revision: 1
A Product Line of
Diodes Incorporated
DMN3024LK3
Suggested Pad Layout
6.2
3.0
0.244
0.118
5.8
0.228
1.6
6.17
0.063 0.243
mm
inches
2.58
0.101
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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Copyright © 2009, Diodes Incorporated
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相关型号：
DMN3025LFG-13
Power Field-Effect Transistor, 7.5A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
DIODES
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