DMN3025LFG [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET; 30V N沟道增强型MOSFET
| 型号： | DMN3025LFG |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3025LFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
Product Summary
Features
•
•
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
ID Max
TA = +25°C
V(BR)DSS
RDS(ON) Max
•
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% Unclamped Inductive Switch (UIS) test in production
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
7.5A
6.1A
18mΩ @ VGS = 10V
28mΩ @ VGS = 4.5V
30V
•
•
•
•
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
•
•
Applications
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
•
Weight: 0.072 grams (approximate)
POWERDI3333-8
8
7
6
5
1
2
3
4
Pin 1
S
S
S
G
D
D
D
D
Top View
Top View
Internal Schematic
Bottom View
Ordering Information (Note 4)
Part Number
DMN3025LFG-7
DMN3025LFG-13
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
N3025 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated.
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November 2012
© Diodes Incorporated
DMG3025LFG
Document number: DS35642 Rev. 4 – 2
DMN3025LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±20
VGSS
T
T
A = +25°C
A = +70°C
Steady
State
7.5
6.1
A
A
ID
ID
Continuous Drain Current (Note 5) VGS = 10V
TA = +25°C
TA = +70°C
10
7.8
t<10s
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
2.5
60
14
10
A
A
IS
IDM
IAR
EAR
A
Avalanche Energy (Note 6) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
PD
Value
2.0
1.3
61
37
6.4
Units
T
A = +25°C
Total Power Dissipation (Note 5)
W
TA = +70°C
Steady State
t < 10s
Thermal Resistance, Junction to Ambient (Note 5)
Rθ
JA
°C/W
°C
Thermal Resistance, Junction to Case
Rθ
JC
Operating and Storage Temperature Range
-55 to 150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
±1
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.8
—
—
—
—
—
14
2.0
18
28
-
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 7.8A
VGS = 4.5V, ID = 7.0A
VDS = 10V, ID = 7.8A
VGS = 0V, IS = 6.3A
mΩ
Static Drain-Source On-Resistance
RDS (ON)
23
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
9
S
V
|Yfs|
VSD
0.70
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
605
74
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ciss
Coss
Crss
Rg
V
DS = 15V, VGS = 0V,
Output Capacitance
pF
f = 1.0MHz
Reverse Transfer Capacitance
Gate resistance
58
Ω
1.5
5.3
11.6
2
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
ns
VDS = 15V, ID = 7.8A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
2.4
3.8
4.1
17.9
4.7
5.5
2.6
Turn-On Delay Time
Turn-On Rise Time
VDD = 15V, VGS = 4.5V,
RL = 2.4ꢀ, RG = 1ꢀ,
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
ns
trr
IF = 12A, di/dt = 500A/μs
nC
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
2 of 6
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November 2012
© Diodes Incorporated
DMG3025LFG
Document number: DS35642 Rev. 4 – 2
DMN3025LFG
30
25
30
25
V
= 5.0V
DS
20
15
10
20
15
10
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
5
0
5
0
T
= 25°C
A
T
= -55°C
A
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
Figure 1 Typical Output Characteristic
0.10
0.08
0.030
0.025
V
= 4.5V
GS
0.020
0.015
0.010
0.06
0.04
V
= 10V
GS
I
= 10A
D
0.02
0
0.005
0
3
4
5
6
7
8
9
10
0
5
10
15
20
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.6
1.4
1.2
0.08
0.07
V
= 10V
V
= 4.5V
GS
GS
I
= 10A
D
0.06
0.05
0.04
0.03
0.02
T
= 150°C
A
T
= 125°C
A
V
= 4.5V
= 5A
GS
I
D
T
= 85°C
A
1.0
T
= 25°C
A
T
= -55°C
A
0.8
0.6
0.01
0
0
5
10
15
20
25
30
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
POWERDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMG3025LFG
Document number: DS35642 Rev. 4 – 2
DMN3025LFG
0.040
0.035
2.0
1.8
I
= 1mA
D
1.6
1.4
1.2
1.0
0.8
0.6
V
= 4.5V
= 5A
GS
0.030
0.025
0.020
I
D
I
= 250µA
D
0.015
0.010
V
= 10V
GS
I
= 10A
D
0.4
0.2
0
0.005
0
-50 -25
0
25
50
75 100 125 150
C)
Figure 7 On-Resistance Variation with Temperature
-50 -25
0
25
50 75 100 125 150
C)
TJ, JUNCTION TEMPERATURE (
°
TJ, JUNCTION TEMPERATURE (°
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10,000
30
25
T
= 25°C
1,000
20
15
10
A
C
iss
100
10
C
oss
C
rss
5
0
f = 1MHz
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
R
DS(on)
Limited
V
I
= 15V
P
= 10µs
DS
W
= 10A
D
10
1
DC
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
P
W
0.1
= 1ms
W
TJ(max) = 150°C
TA = 25°C
P
= 100µs
W
Single Pulse
0.01
0
2
4
6
8
10
12
0.1
1
10
100
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
POWERDI is a registered trademark of Diodes Incorporated.
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© Diodes Incorporated
DMG3025LFG
Document number: DS35642 Rev. 4 – 2
DMN3025LFG
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA(t) = r(t) * Rθ
RθJA = 72°C/W
JA
Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
POWERDI3333-8
Dim Min Max Typ
A
A3
D
E
3.25 3.35 3.30
3.25 3.35 3.30
A1
D
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
D2
L
(4x)
A
A1
A3
b
b2
L
0.75 0.85 0.80
0
−
0.05 0.02
0.203
1
8
4
5
Pin 1 ID
E2
−
0.27 0.37 0.32
0.20
0.35 0.45 0.40
b2
(4x)
E
−
−
L1
e
Z
0.39
0.65
0.515
−
−
−
−
−
−
L1
(3x)
All Dimensions in mm
Z (4x)
e
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Dimensions
C
Value (in mm)
0.650
8
5
4
G
G1
Y
Y1
Y2
Y3
X
0.230
0.420
3.700
2.250
1.850
0.700
2.370
Y2
Y3
G1
Y1
Y
1
X2
0.420
X2
C
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DMG3025LFG
Document number: DS35642 Rev. 4 – 2
DMN3025LFG
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
6 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMG3025LFG
Document number: DS35642 Rev. 4 – 2
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