DMN3024LSS [DIODES]
30V N-CHANNEL ENHANCEMENT MODE MOSFET; 30V N沟道增强型MOSFET
| 型号： | DMN3024LSS |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总8页 (文件大小：301K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
DMN3024LSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
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Product Summary
Features and Benefits
•
•
•
Low on-resistance
ID
V(BR)DSS
RDS(on)
Fast switching speed
T
A = 25°C
“Green” component and RoHS compliant (Note 1)
8.5A
6.9A
24mΩ @ VGS= 10V
36mΩ @ VGS= 4.5V
30V
Mechanical Data
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
•
•
•
Motor control
•
Weight: 0.074 grams (approximate)
Backlighting
DC-DC Converters
Power management functions
D
S
D
S
D
G
S
D
G
D
S
Equivalent Circuit
TOP VIEW
TOP VIEW
Ordering Information (Note 1)
Product
Marking
N3024LS
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN3024LSS-13
13
12
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
N3024LS = Product Type Marking Code
= Manufacturer’s Marking
YY WW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
N3024LS
YY
WW
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July 2009
© Diodes Incorporated
DMN3024LSS
Document Revision: 3
A Product Line of
Diodes Incorporated
DMN3024LSS
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Symbol
VDSS
Value
30
Unit
V
V
VGS
±20
8.5
6.8
6.4
36
(Note 3)
Continuous Drain current
A
VGS = 10V TA = 70°C (Note 3)
(Note 2)
ID
Pulsed Drain current
(Note 4)
(Note 3)
(Note 4)
A
A
A
VGS= 10V
IDM
IS
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
4.5
36
ISM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
1.6
12.5
2.8
22.2
80
Unit
(Note 2)
W
mW/°C
Power dissipation
Linear derating factor
PD
(Note 3)
(Note 2)
Thermal Resistance, Junction to Ambient
(Note 3)
Thermal Resistance, Junction to Lead
Operating and storage temperature range
°C/W
Rθ
Rθ
JA
45
35
(Note 5)
°C/W
°C
JL
-55 to 150
TJ, TSTG
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.
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© Diodes Incorporated
DMN3024LSS
Document Revision: 3
A Product Line of
Diodes Incorporated
DMN3024LSS
Thermal Characteristics
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
RDS(on) Limited
25mm x 25mm
1oz FR4
10
1
DC
1s
100m
100ms
10ms
10m
Single Pulse
Tamb=25°C
1ms
100µs
10
1m
100m
VDS Drain1-Source Voltage (V)
0
20 40 60 80 100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
80
70
60
50
40
30
20
10
0
Tamb=25°C
Single Pulse
Tamb=25°C
100
10
1
D=0.5
Single Pulse
D=0.05
D=0.1
D=0.2
100µ 1m 10m 100m
1
10
100
1k
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
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© Diodes Incorporated
DMN3024LSS
Document Revision: 3
A Product Line of
Diodes Incorporated
DMN3024LSS
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
30
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
0.5
ID = 250μA, VGS= 0V
μA
nA
VDS= 30V, VGS= 0V
±100
IGSS
VGS= ±20V, VDS= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
1.0
3.0
0.024
0.036
⎯
V
VGS(th)
⎯
⎯
ID= 250μA, VDS= VGS
V
V
GS= 10V, ID= 7.0A
GS= 4.5V, ID= 6.0A
Static Drain-Source On-Resistance (Note 6)
Ω
RDS (ON)
⎯
Forward Transconductance (Notes 6 & 7)
Diode Forward Voltage (Note 6)
Reverse recovery time (Note 7)
Reverse recovery charge (Note 7)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
16.5
0.82
12
S
V
gfs
VSD
trr
⎯
⎯
VDS= 15V, ID= 7.1A
IS= 1.7A, VGS= 0V
1.2
ns
nC
⎯
IS= 2.2A, di/dt= 100A/μs
4.8
Qrr
⎯
⎯
608
132
71
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
VDS= 15V, VGS= 0V
f= 1MHz
Output Capacitance
Reverse Transfer Capacitance
V
DS= 15V, VGS= 4.5V
Total Gate Charge
6.3
nC
Qg
⎯
⎯
ID= 7A
Total Gate Charge
12.9
2.5
2.5
2.9
3.3
16
nC
nC
nC
ns
ns
ns
ns
Qg
Qgs
Qgd
tD(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS= 15V, VGS= 10V
Gate-Source Charge
ID= 7A
Gate-Drain Charge
Turn-On Delay Time (Note 8)
Turn-On Rise Time (Note 8)
Turn-Off Delay Time (Note 8)
Turn-Off Fall Time (Note 8)
V
DD= 15V, VGS= 10V
ID= 1A, RG ≅ 6.0Ω
tD(off)
tf
8
Notes:
6. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
7. For design aid only, not subject to production testing.
8. Switching characteristics are independent of operating junction temperatures.
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© Diodes Incorporated
DMN3024LSS
Document Revision: 3
A Product Line of
Diodes Incorporated
DMN3024LSS
Typical Characteristics
10V
VGS
T = 150°C
10V
5V
4V
4V
3.5V
10
1
10
1
3.5V
3V
2.5V
3V
2V
0.1
0.01
0.1
2.5V
VGS
1.5V
T = 25°C
0.01
0.1
1
0.1
V
1
V
Drain-Source Voltage 1(V0 )
Drain-Source Voltage1(V0 )
DS
DS
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
ID = 7A
10
1
VDS = 10V
RDS(on)
T = 150°C
VGS(th)
T = 25°C
VGS = VDS
ID = 250uA
0.1
2
4
-50
0
50
100
150
VGS Gate-Source 3Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
1000
10
2.5V
VGS
T = 25°C
100
T = 150°C
1
3V
10
3.5V
0.1
0.01
1E-3
T = 25°C
1
4V
0.1
4.5V
10V
Vgs = -3V
0.8 1.0
VSD Source-Drain Voltage (V)
0.01
0.01
0.2
0.4
0.6
ID Drain C1urrent (A)10
0.1
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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© Diodes Incorporated
DMN3024LSS
Document Revision: 3
A Product Line of
Diodes Incorporated
DMN3024LSS
Typical Characteristics - continued
900
800
700
600
10
9
8
7
6
5
4
3
2
1
0
VGS = 0V
f = 1MHz
ID = 7A
CISS
500
COSS
400
CRSS
300
VDS = 15V
200
100
0
1
10
0
1
2
4
7
8
9 10 11 12 13 14
3 Q - 5Ch6arge (nC)
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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© Diodes Incorporated
DMN3024LSS
Document Revision: 3
A Product Line of
Diodes Incorporated
DMN3024LSS
Package Outline Dimensions
DIM
Inches
Min. Max.
Millimeters
DIM
Inches
Min. Max.
Millimeters
Max.
Min.
1.35
0.10
4.80
5.80
3.80
0.40
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
A
A1
D
0.053 0.069
0.004 0.010
0.189 0.197
0.228 0.244
0.150 0.157
0.016 0.050
e
b
c
θ
h
-
0.050 BSC
0.013 0.020
0.008 0.010
1.27 BSC
0.33
0.19
0°
0.51
0.25
8°
H
0°
8°
E
0.010 0.020
0.25
-
0.50
-
L
-
-
Suggested Pad Layout
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.27
0.050
mm
inches
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July 2009
© Diodes Incorporated
DMN3024LSS
Document Revision: 3
A Product Line of
Diodes Incorporated
DMN3024LSS
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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© Diodes Incorporated
DMN3024LSS
Document Revision: 3
相关型号：
DMN3025LFG-13
Power Field-Effect Transistor, 7.5A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
DIODES
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