DMN3025LFDF-7 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMN3025LFDF-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：288K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3025LFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ID max
BVDSS
RDS(ON) max
TA = +25°C
20.5mΩ @ VGS = 10V
30mΩ @ VGS = 4.5V
8.3A
7.4A
30V
Mechanical Data
Description and Applications
Case: U-DFN2020-6 (Type F)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (Approximate)
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
)
General Purpose Interfacing Switch
Power Management Functions
e4
U-DFN2020-6
(Type F)
D
G
Pin1
S
Pin Out
Bottom View
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN3025LFDF-7
DMN3025LFDF-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
S6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
S6
M = Month (ex: 9 = September)
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
Code
D
E
F
G
H
I
J
K
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMN3025LFDF
Datasheet number: DS37737 Rev. 1 - 2
DMN3025LFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±20
VGSS
Steady
State
TA = +25C
TA = +70C
TA = +25C
TA = +70C
8.3
6.6
A
A
ID
ID
Continuous Drain Current (Note 6) VGS = 10V
9.9
7.9
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10s pulse, duty cycle = 1%)
Avalanche Current (L = 0.1mH) (Note 7)
3
A
A
IS
40
15
11
IDM
IAS
EAS
A
Avalanche Energy (L = 0.1mH) (Note 7)
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
0.66
0.42
173
133
2.1
1.3
62
TA = +25°C
TA = +70°C
Steady State
t<10s
Total Power Dissipation (Note 5)
W
PD
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
R
JA
TA = +25°C
TA = +70°C
Steady State
t<10s
PD
Thermal Resistance, Junction to Ambient (Note 6)
°C/W
R
JA
43
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
9.4
°C/W
°C
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
-
-
-
-
-
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
μA
nA
-
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
-
2.0
20.5
30
V
m
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 7A
VGS = 4.5V, ID = 7A
VGS = 0V, IS = 1A
-
-
-
-
-
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
0.70
1.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
641
66
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
50
2.2
6
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
13.2
1.7
2.2
3.3
4.4
22.3
5.3
11.4
8.2
Qg
nC
VDS = 15V, ID = 10A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDD = 15V, VGS = 10V,
RG = 6Ω, ID = 1A
ns
Turn-Off Delay Time
Turn-Off Fall Time
tD(OFF)
tF
Reverse Recovery Time
Reverse Recovery Charge
ns
tRR
IF = 11A, di/dt = 100A/μs
IF = 11A, di/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C .
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMN3025LFDF
Datasheet number: DS37737 Rev. 1 - 2
DMN3025LFDF
30
25
20
15
10
5
30.0
25.0
20.0
15.0
10.0
5.0
VDS = 5.0V
VGS = 3.5V
VGS = 4.0V
VGS = 4.5V
VGS = 5.0V
VGS = 3.0V
VGS = 10V
TJ = 150oC
TJ = 25oC
TJ = -55oC
TJ = 125oC
TJ = 85oC
VGS = 2.5V
1.5
0
0.0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
2
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
VGS = 4.5V
TJ = 150oC
TJ = 125oC
TJ = 85oC
VGS = 4.5V
VGS = 10V
TJ = 25oC
TJ = -55oC
0
5
10
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
Figure 4. Typical On-Resistance vs Drain Current and
Temperature
1.8
1.6
1.4
1.2
1
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
VGS = 4.5V, ID = 5A
VGS = 4.5V, ID = 5A
VGS = 10V, ID = 10A
VGS = 10V, ID = 10A
0.8
0.6
-50 -25
TJ, JUNCTION TEMPERATURE (℃)
Figure 6.On-Resistance Variation with Temperature
June 2016
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. On-Resistance Variation with Temperature
3 of 6
www.diodes.com
DMN3025LFDF
Datasheet number: DS37737 Rev. 1 - 2
© Diodes Incorporated
DMN3025LFDF
30
25
20
15
10
5
3
2.5
2
ID = 1mA
1.5
1
ID = 250µA
VGS = 0V, TJ = 25oC
0.5
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. Gate Threshold Variation vs Junction
Temperature
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8. Diode Forward Voltage vs. Current
10000
1000
100
10
8
f = 1MHz
Ciss
6
4
Coss
VDS = 15V, ID = 10A
2
Crss
0
10
0
2
4
6
8
10
12
14
0
2
4
6
8
10 12 14 16 18 20
Qg (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Typical Junction Capacitance
Figure 10. Gate Charge
1
D=0.9
D=0.7
D=0.3
D=0.5
0.1
D=0.1
D=0.05
0.01
D=0.02
D=0.01
D=0.005
RθJA (t) = r(t) * RθJA
RθJA = 174℃/W
Duty Cycle, D = t1/t2
D=Single Pulse
0.0001
0.001
0.00001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 11. Transient Thermal Resistance
4 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMN3025LFDF
Datasheet number: DS37737 Rev. 1 - 2
DMN3025LFDF
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
A3
A1
A
Dim
A
A1
A3
b
Min Max
0.57 0.63
0.00 0.05
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
Seating Plane
-
-
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a 0.33 0.43
E
E2
E2a
e
e2
e3
e4
k
1.95 2.05
1.05 1.25
0.65 0.75
D2a
E2a
z2
0.65 BSC
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
0.15 BSC
D2
E
E2
k1
e2
k1
k2
L
L
k
0.36 BSC
0.225 0.325 0.275
0.20 BSC
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
z( 4x)
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
X3
Value
Dimensions
Y
C
X
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
5 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMN3025LFDF
Datasheet number: DS37737 Rev. 1 - 2
DMN3025LFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
6 of 6
www.diodes.com
June 2016
© Diodes Incorporated
DMN3025LFDF
Datasheet number: DS37737 Rev. 1 - 2
相关型号：
DMN3025LFG-13
Power Field-Effect Transistor, 7.5A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
DIODES
DMN3029LFG-13
Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN
DIODES
©2020 ICPDF网 联系我们和版权申明