DMN3021LFDF-7 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMN3021LFDF-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN3021LFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
0.6mm Profile – Ideal for Low Profile Applications
PCB Footprint of 4mm2
ID Max
V(BR)DSS
RDS(ON) Max
TA = +25°C
Low Gate Threshold Voltage
15mΩ @ VGS = 10V
20mΩ @ VGS = 4.5V
9.3A
8.1A
Fast Switching Speed
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description
Case: U-DFN2020-6 (Type F)
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe. Solderable
Battery Management Application
Power Management Functions
DC-DC Converters
e4
per MIL-STD-202, Method 208
Weight: 0.007 grams (Approximate)
U-DFN2020-6 (Type F)
D
G
S
Pin Out
Bottom View
Bottom View
Internal Schematic
Top View
Ordering Information (Note 4)
Part Number
DMN3021LFDF-7
DMN3021LFDF-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type F)
U-DFN2020-6 (Type F)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
F2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
F2
M = Month (ex: 9 = September)
Date Code Key
Year
2016
2017
2018
2019
2020
2021
2022
2023
Code
D
E
F
G
H
I
J
K
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN3021LFDF
Datasheet number: DS37731 Rev. 2 - 2
DMN3021LFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Unit
V
Gate-Source Voltage
±20
V
VGSS
Steady
State
TA = +25°C
9.3
7.5
A
A
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) VGS = 10V
11.8
9.4
t<5s
ID
Pulsed Drain Current (380μs Pulse, Duty Cycle = 1%)
50
1.8
18
16
A
A
IDM
Maximum Continuous Drain-Source Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
IS
IAS
A
Repetitive Avalanche Energy (Note 7) L = 0.1mH
mJ
EAS
Thermal Characteristics
Characteristic
Symbol
Value
0.73
Unit
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
RΘJA
PD
0.47
174
112
2.03
1.30
64
TA = +70°C
Steady State
t < 5s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
TA = +25°C
TA = +70°C
Steady State
t < 5s
Thermal Resistance, Junction to Ambient (Note 6)
RΘJA
40
13
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
RΘJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
30
—
—
—
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
±100
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
—
—
—
2.2
15
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 10V, ID = 7A
VGS = 4.5V, ID = 7A
VGS = 0V, IS = 2.2A
Static Drain-Source On-Resistance
—
20
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
0.8
1.2
—
—
—
—
—
—
—
—
—
—
—
—
706
112
81
—
—
—
—
—
—
—
—
—
—
—
—
CISS
COSS
CRSS
RG
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
2.6
14
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
QG
6.7
1.9
2.5
5.4
6.8
9.7
4.7
QG
nC
ns
VDS = 15V, ID = 5A
QGS
QGD
tD(ON)
tR
Turn-On Delay Time
Turn-On Rise Time
VDS = 15V, VGS = 4.5V,
RG = 1.7Ω, ID = 5A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. I and E rating are based on low frequency and duty cycles to keep T = +25°C.
AS
AS
J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN3021LFDF
Datasheet number: DS37731 Rev. 2 - 2
DMN3021LFDF
20
18
16
14
12
10
8
30.0
25.0
20.0
15.0
10.0
5.0
VGS=3.5V
VGS=5.0V
VDS= 5V
VGS=3.0V
VGS=10.0V
125℃
85℃
6
4
VGS=2.5V
VGS=2.2V
2.5
25℃
2
150℃
-55℃
2.5
0.0
0
0
0.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
1
1.5
2
3
0
0.5
1
1.5
2
3
3.5
4
4.5
5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.2
0.15
0.1
0.025
0.02
0.015
0.01
0.005
0
VGS=4.5V
VGS=10V
0.05
0
ID=7.0A
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
Figure 4. Typical Transfer Characteristic
2.5
2
0.03
VGS= 4.5V
150℃
125℃
0.025
0.02
0.015
0.01
0.005
0
VGS=4.5V, ID=5A
VGS=4.5V, ID=10A
85℃
25℃
1.5
1
-55℃
0.5
0
-50 -25
0
25
50
75
100 125 150
0
5
10
15
20
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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© Diodes Incorporated
DMN3021LFDF
Datasheet number: DS37731 Rev. 2 - 2
DMN3021LFDF
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
3
2.5
2
ID=1mA
1.5
1
VGS=4.5V, ID=10A
VGS=4.5V, ID=5A
ID=250μA
0.5
0
-50 -25
0
25
50
75
100 125 150
-50 -25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
20
15
10
5
10000
1000
100
10
150℃
125℃
VGS=0V, TA=125℃
85℃
25℃
VGS=0V, TA=85℃
VGS=0V, TA=150℃
VGS=0V, TA=25℃
1
VGS=0V, TA=-55℃
0
0.1
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakage Current vs.
Voltage
10000
1000
100
10
8
f=1MHz
Ciss
6
VDS=15V, ID=5A
Coss
4
Crss
2
0
10
0
3
6
9
12
15
0
5
10
15
20
25
30
Qg (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
Figure 12. Gate Charge
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© Diodes Incorporated
DMN3021LFDF
Datasheet number: DS37731 Rev. 2 - 2
DMN3021LFDF
100
10
RDS(ON) Limited
PW=1ms
PW=100μs
1
PW=10ms
PW=100ms
TJ(MAX)=150℃
TA=25℃
Single Pulse
DUT on 1*MRP board
VGS=10V
0.1
0.01
PW=1s
PW=10s
DC
10
0.01
0.1
1
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
0.01
RθJA(t)=r(t) * RθJA
RθJA=174℃/W
Duty Cycle, D=t1 / t2
D=Single Pulse
0.0001
0.001
1E-05
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 14. Transient Thermal Resistance
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© Diodes Incorporated
DMN3021LFDF
Datasheet number: DS37731 Rev. 2 - 2
DMN3021LFDF
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
U-DFN2020-6
(Type F)
Min Max
0.57 0.63
0.00 0.05
A3
A1
Dim
A
A1
A3
b
Typ
0.60
0.03
0.15
0.30
2.00
0.95
0.38
2.00
1.15
0.70
A
Seating Plane
-
-
0.25 0.35
1.95 2.05
0.85 1.05
D
D
D2
e3
k2
e4
D2a 0.33 0.43
E
E2
E2a
e
1.95 2.05
1.05 1.25
0.65 0.75
0.65 BSC
D2a
E2a
z2
e2
e3
e4
k
0.863 BSC
0.70 BSC
0.325 BSC
0.37 BSC
D2
E
E2
k1
k2
L
0.15 BSC
0.36 BSC
0.225 0.325 0.275
0.20 BSC
k1
e2
L
k
z1
z
z1
z2
0.110 BSC
0.20 BSC
e
b
All Dimensions in mm
z(4x)
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type F)
X3
Y
C
X
Value
Dimensions
(in mm)
C
X
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
X1
X2
X3
Y
Y1
Y2
Y3
Y4
Y3
Y2
Y1 Y4
X1
Pin1
X2
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DMN3021LFDF
Datasheet number: DS37731 Rev. 2 - 2
DMN3021LFDF
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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DMN3021LFDF
Datasheet number: DS37731 Rev. 2 - 2
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