DMN3023L-13 [DIODES]
Small Signal Field-Effect Transistor,;型号: | DMN3023L-13 |
厂家: | DIODES INCORPORATED |
描述: | Small Signal Field-Effect Transistor, |
文件: | 总7页 (文件大小:525K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DMN3023L
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low On-Resistance
ID
V(BR)DSS
RDS(ON)
TA = +25°C
Low Gate Threshold Voltage
Low Input Capacitance
6.2A
5.8A
25mΩ @ VGS = 10V
28mΩ @ VGS = 4.5V
Fast Switching Speed
30V
Low Input/Output Leakage
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON) and yet maintain superior switching
Case: SOT23
)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
performance, making it ideal for high-efficiency power management
applications.
Terminals: Finish
– Matte Tin Annealed over Copper
Load Switch
Leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
DC-DC Converters
Power Management Functions
Weight: 0.009 grams (Approximate)
SOT23
D
ESD PROTECTED
S
G
Top View
Equivalent Circuit
Top View
Ordering Information (Note 4)
Part Number
DMN3023L-7
DMN3023L-13
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
3N7 = Product Type Marking Code
Y or ꢀ = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
2024
Code
B
C
D
E
F
G
H
I
J
K
L
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMN3023L
Document number: DS37248 Rev. 2 - 2
DMN3023L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
30
Units
V
V
Gate-Source Voltage
±20
VGSS
Steady
State
TA = +25°C
TA = +70°C
6.2
4.9
A
Continuous Drain Current (Note 6) VGS = 10V
ID
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
44
A
A
IDM
IS
1.5
17.5
15.2
A
IAS
EAS
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
0.9
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
RθJA
PD
0.6
144
103
1.3
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
°C/W
W
TA = +25°C
0.8
97
70
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
24
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
1
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = ±16V, VDS = 0V
µA
µA
±10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.8
1.8
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.0A
VGS = 4.5V, ID =3.5A
VGS = 2.5V, ID =2.5A
25
28
68
Static Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1.2
VGS = 0V, IS = 1A
873
121
67
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
—
—
77
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, ID = 4A
18.4
8.3
2.2
2.5
17
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Qg
Qg
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
18
VDD = 15V, VGS = 10V,
RL = 15Ω, RG = 6Ω
Turn-Off Delay Time
231
70
tD(OFF)
tF
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMN3023L
Document number: DS37248 Rev. 2 - 2
DMN3023L
20.0
18.0
16.0
14.0
12.0
10.0
8.0
20
18
16
14
12
10
8
VGS=10V
TA=-55℃
TA=+25℃
VGS=4.5V
VGS=4.0V
VGS=3.5V
TA=+85℃
TA=+125℃
VGS=3.0 V
6
6.0
VGS=2.5V
TA=+150℃
4
4.0
VGS=2.2V
VDS=5V
2
2.0
0
0.0
1
1.5
2
2.5
3
3.5
0
1
2
3
4
5
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
Figure 2 Typical Transfer Characteristic
0.024
0.023
0.022
0.021
0.02
0.1
0.08
0.06
0.04
0.02
0
VGS=4.5V
VGS=10V
0.019
0.018
0.017
0.016
0.015
0.014
ID=4.0A
ID=3.5A
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT
VGS, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical On-Resistance vs Drain Current
and Gate Voltage
Figure 4 Typical Transfer Characteristic
1.8
1.6
1.4
1.2
1
0.036
0.034
0.032
0.03
0.028
0.026
0.024
0.022
0.02
0.018
0.016
0.014
0.012
0.01
TA=+150℃
VGS= 4.5V
VGS=4.5V, ID=3.5A
TA=+125℃
VGS=10V, ID=4A
TA=+85℃
TA=+25℃
TA=-55℃
0.8
0.6
0
2
4
6
8
10 12 14 16 18 20
-50 -25
0
25 50 75 100 125 150
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs Drain Current
and Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 6 On-Resistance Variation with Temperature
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© Diodes Incorporated
DMN3023L
Document number: DS37248 Rev. 2 - 2
DMN3023L
2
1.8
1.6
1.4
1.2
1
0.04
0.035
0.03
ID=1mA
VGS=4.5V, ID=3.5A
0.025
0.02
ID=250mA
0.015
0.01
0.8
0.6
VGS=10V, ID=4A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8 Gate Threshold Variation vs Ambient
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
10000
1000
100
10
20
18
16
14
12
10
8
VGS=0V, TA=+150℃
TA=+150℃
TA=+125℃
VGS=0V, TA=+125℃
VGS=0V, TA=+85℃
VGS=0V, TA=+25℃
6
TA=+85℃
TA=+25℃
4
1
2
VGS=0V, TA=-55℃
0
0.1
0
0.3
0.6
0.9
1.2
1.5
0
5
10
15
20
25
30
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, Drain-SOURCE VOLTAGE (V)
Figure 10 Typical Drain-Source Leakge Current vs
Voltage
Figure 9 Diode Forward Voltage vs. Current
10
8
10000
f=1MHz
Ciss Ave (pF)
1000
100
10
6
Coss Ave (pF)
Crss Ave (pF)
4
VDS=15V, ID=4A
2
0
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 Typical Junction Capacitance
Qg, TOTAL GATE CHARGE (nC)
Figure 12 Gate Charge
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© Diodes Incorporated
DMN3023L
Document number: DS37248 Rev. 2 - 2
DMN3023L
1
D=0.9
D=0.7
0.1
D=0.5
D=0.3
D=0.1
0.01
D=0.05
D=0.02
Rthja(t)=r(t) * Rthja
Rthja=144oC/W
D=0.01
Duty Cycle, D=t1 / t2
D=0.005
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
10
RDS(ON) Limited
PW=100ms
1
PW=1m
s
PW=10ms
TJ(Max)=+150℃
TA=+25℃
0.1
0.01
Single Pulse
DUT on 1*MRP
board
PW=100ms
DC
VGS=10V
PW=1s
PW=10s
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 14 SOA Safe Operation Area
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© Diodes Incorporated
DMN3023L
Document number: DS37248 Rev. 2 - 2
DMN3023L
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SOT23
All 7°
Dim
A
B
C
D
F
G
H
J
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
H
0.37
1.20
2.30
0.89
0.45
1.78
2.80
J
K
K1
a
M
A
2.05
3.00
1.83
2.90
0.05
L
L1
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
E
X
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DMN3023L
Document number: DS37248 Rev. 2 - 2
DMN3023L
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS37248 Rev. 2 - 2
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