DMC4029SK4-13 [DIODES]
Small Signal Field-Effect Transistor,;
| 型号： | DMC4029SK4-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 开关 晶体管 |
| 文件： | 总10页 (文件大小：614K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC4029SK4
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID
TA = +25°C
8.3A
Low Input Capacitance
Device
Q1
BVDSS
40V
RDS(ON) Max
Low On-Resistance
24mΩ @ VGS = 10V
32mΩ @ VGS = 4.5V
45mΩ @ VGS = -10V
55mΩ @ VGS = -4.5V
Fast Switching Speed
7.2A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
-6.1A
Q2
-40V
-5.5A
Mechanical Data
Description
Case: TO252-4
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.34 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
D
D
D
TO252-4
G1
G2
D
S1
S2
S1
G2
S2
G1
Top View
Bottom View
Pin-Out Top View
N-Channel MOSFET
P-Channel MOSFET
Ordering Information (Note 4)
Part Number
DMC4029SK4-13
Case
TO252-4
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
= Manufacturer’s Marking
C4029S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
C4029S
YYWW
WW = Week (01 to 53)
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© Diodes Incorporated
DMC4029SK4
Document number: DS37823 Rev. 3 - 2
DMC4029SK4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value_Q1
40
Value_Q2
Unit
V
-40
Gate-Source Voltage
±20
±20
V
VGSS
Steady
State
TA = +25°C
8.3
6.7
-6.1
-4.9
A
A
ID
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) VGS = 10V
11.8
9.4
-8.6
-6.9
t<10s
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.1mH (Note 8)
2.5
45
21
22
-2.5
-35
-20
20
A
A
IS
IDM
IAS
EAS
A
Avalanche Energy, L = 0.1mH (Note 8)
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
1.5
TA = +25°C
TA = +70°C
Steady State
t<10s
Total Power Dissipation (Note 5)
W
°C/W
W
PD
RθJA
PD
1.0
88
40
2.9
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
TA = +25°C
TA = +70°C
Steady State
t<10s
1.6
42
20
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
4.5
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics — Q1 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
40
V
1
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
100
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1.0
3.0
24
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
15
20
0.7
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 1.0A
Static Drain-Source On-Resistance
32
Diode Forward Voltage
1.0
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
1,060
84
CISS
COSS
CRSS
RG
VDS = 20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
58
1.6
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
8.8
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
QG
19.1
3.0
QG
nC
VDS = 20V, ID = 8A
QGS
QGD
tD(ON)
tR
Gate-Drain Charge
2.5
Turn-On Delay Time
5.3
Turn-On Rise Time
7.1
VDD = 25V, RL = 2.5Ω
VGS = 10V, RG = 3Ω
ns
Turn-Off Delay Time
15.1
4.8
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10.5
4.15
ns
tRR
IF = 8A, di/dt = 100A/μs
IF = 8A, di/dt = 100A/μs
nC
QRR
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© Diodes Incorporated
DMC4029SK4
Document number: DS37823 Rev. 3 - 2
DMC4029SK4
Electrical Characteristics — Q2 P-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
V
-1
BVDSS
IDSS
VGS = 0V, ID = -250µA
µA
nA
VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V
100
IGSS
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
-1.0
-3.0
45
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
33
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -4A
VGS = 0V, IS = -1.0A
Static Drain-Source On-Resistance
40
55
Diode Forward Voltage
-0.7
-1.0
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
1,154
84
CISS
COSS
CRSS
RG
VDS = -20V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
66
12.6
10.6
21.5
2.2
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
QG
QG
nC
VDS = -20V, ID = -4.9A
QGS
QGD
tD(ON)
tR
Gate-Drain Charge
3.3
Turn-On Delay Time
8.7
Turn-On Rise Time
19.6
34.9
25.5
9.61
3.3
VDS = -20V, ID = -3.9A
VGS = -4.5V, RG = 1Ω
ns
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
tRR
IS = -3.9A, di/dt = 100A/μs
IS = -3.9A, di/dt = 100A/μs
nC
QRR
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. I and E rating are based on low frequency and duty cycles to keep T = +25°C.
AS
AS
J
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMC4029SK4
Document number: DS37823 Rev. 3 - 2
DMC4029SK4
Typical Characteristics — N-Channel
30
25
20
15
10
5
20.0
VDS = 5V
VGS = 3.5V
15.0
VGS = 4.0V
VGS = 4.5V
VGS=5.0V
VGS = 10.0V
10.0
5.0
TJ=125℃
TJ=85℃
TJ=25℃
VGS = 3.0V
VGS = 2.5V
TJ=150℃
TJ=-55℃
0.0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.2
0.18
0.16
0.14
0.12
0.1
0.024
0.022
0.02
VGS = 4.5V
0.018
0.016
0.014
0.012
0.01
0.08
0.06
0.04
0.02
0
VGS = 10V
ID = 5.0A
0.008
0
5
10
15
20
3
4
5
6
7
8
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
2
1.5
1
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
VGS = 4.5V
VGS = 4.5V, ID = 5.0A
150℃
125℃
85℃
VGS = 10V, ID = 10A
25℃
0.5
0
-55℃
-50
-25
0
25
50
75
100 125 150
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
Figure 6. On-Resistance Variation with Temperature
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DMC4029SK4
Document number: DS37823 Rev. 3 - 2
DMC4029SK4
Typical Characteristics — N-Channel (Continued)
3
2.8
2.6
2.4
2.2
2
0.04
0.035
0.03
VGS = 4.5V, ID = 5.0A
0.025
ID = 1mA
0.02
ID = 250μA
1.8
1.6
1.4
1.2
1
0.015
VGS = 10V, ID = 10A
0.01
0.005
0
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
VGS = 0V
Figure 8. Gate Threshold Variation vs. Temperature
30
25
20
15
10
5
10000
1000
100
f=1MHz
Ciss
TJ = 85oC
Coss
TJ = 125oC
TJ = 25oC
Crss
TJ = 150oC
TJ = -55oC
10
0
0
5
10
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
100
10
RDS(ON) Limited
PW =100µs
6
1
PW =1ms
PW =10ms
4
PW =100ms
VDS = 20V, ID = 8.0A
PW =1s
0.1
0.01
TJ(Max) = 150℃ TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= 10V
2
PW =10s
DC
0
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18 20
Qg (nC)
Figure 11. Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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DMC4029SK4
Document number: DS37823 Rev. 3 - 2
DMC4029SK4
Typical Characteristics — P-Channel
30
25
20
15
10
5
30.0
VDS = -5.0V
VGS=-3.5V
VGS = -4.0V
VGS = -4.5V
25.0
20.0
15.0
10.0
5.0
VGS = -5.0V
VGS = -10.0V
VGS = -3.0V
TJ=85℃
TJ=25℃
VGS = -2.5V
VGS = -2.0V
TJ=125℃
TJ=150℃
TJ=-55℃
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0
0.0
0
0.5
1
1.5
2
2.5
3
4
4.5
5
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.16
0.14
0.12
0.1
0.06
0.05
0.04
0.03
0.02
ID =-5.0A
VGS = -4.5V
0.08
0.06
0.04
0.02
0
VGS = -10V
ID =-4.0A
2
3
4
5
6
7
8
0
5
10
15
20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
2
1.5
1
VGS = -4.5V
VGS = -4.5V, ID = -5.0A
TJ=150℃
TJ=125℃
TJ=85℃
VGS = -10V, ID = -10A
0.5
0
TJ=25℃
TJ=-55℃
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
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DMC4029SK4
Document number: DS37823 Rev. 3 - 2
DMC4029SK4
Typical Characteristics — P-Channel (Continued)
2
1.8
1.6
1.4
1.2
1
0.08
0.07
ID = -1mA
0.06
VGS = -4.5V, ID = -5.0A
ID = -250μA
0.05
0.04
0.8
0.6
0.4
0.2
0
0.03
VGS = -10V, ID = -10A
0.02
0.01
0
-50
-25
0
25
50
75
100 125 150
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Temperature
Figure 7. On-Resistance Variation with Temperature
VGS = 0V
10000
1000
100
30
25
20
15
10
5
f=1MHz
Ciss
Coss
Crss
TJ = 85oC
TJ = 125oC
TJ = 25oC
TJ = 150oC
TJ = -55oC
10
0
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
10
8
RDS(ON) Limited
PW =100µs
6
PW =1ms
1
PW =10ms
PW =100ms
4
TJ(Max) = 150℃
TC = 25℃
Single Pulse
DUT on 1*MRP Board
VGS= -10V
PW =1s
PW =10s
0.1
0.01
2
VDS = -20V, ID = -4.9A
DC
0
0.1
1
10
100
0
2
4
6
8
10 12 14 16 18 20 22
Qg (nC)
Figure 11. Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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DMC4029SK4
Document number: DS37823 Rev. 3 - 2
DMC4029SK4
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
D=0.01
0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 86℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, Pulse Duration Time (sec)
Figure 13. Transient Thermal Resistance
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Document number: DS37823 Rev. 3 - 2
DMC4029SK4
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252-4
TO252-4
Dim Min Max Typ
2.19 2.39 2.29
A1 0.00 0.13 0.08
A2 0.97 1.17 1.07
E
b3
A
A
c2
L3
D
b
0.51 0.71 0.583
b2 0.61 0.79 0.70
b3 5.21 5.46 5.33
c2 0.45 0.58 0.531
E1
A2
D
6.00 6.20 6.10
H
D1 5.21
-
-
-
e
-
1.27
E
6.45 6.70 6.58
L4
A1
E1 4.32
-
-
H
L
9.40 10.41 9.91
1.40 1.78 1.59
L
L3 0.88 1.27 1.08
L4 0.64 1.02 0.83
e
4X b2
5X b
a
a
0°
10°
-
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TO252-4
X1
Value
Dimensions
(in mm)
Y1
C
C1
X
X1
Y
Y1
Y2
Y3
1.27
2.54
1.00
5.73
2.00
6.17
1.64
2.66
Y2
Y3
C1
Y
X
C
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Document number: DS37823 Rev. 3 - 2
DMC4029SK4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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Document number: DS37823 Rev. 3 - 2
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