DMC4029SSDQ-13 [DIODES]
Power Field-Effect Transistor;
| 型号： | DMC4029SSDQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总8页 (文件大小：400K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC4029SSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID
TA = +25°C
9.0A
•
•
•
•
•
•
Low Input Capacitance
Device
Q2
V(BR)DSS
40V
RDS(on) max
Low On-Resistance
24mΩ @ VGS = 10V
32mΩ @ VGS = 4.5V
45mΩ @ VGS = -10V
55mΩ @ VGS = -4.5V
Fast Switching Speed
7.8A
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
-6.5A
Q1
-40V
-5.9A
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on) and yet maintain superior switching
•
•
Case: SO-8
)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
performance, making it ideal for high efficiency power management
applications.
•
•
•
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Applications
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
e3
•
•
•
DC-DC Converters
Power Management Functions
Backlighting
•
D1
D2
S2
D2
G2
S1
G1
D2
D1
D1
G1
G2
S1
P-Channel MOSFET
S2
N-Channel MOSFET
TOP VIEW
Internal Schematic
Top View
Ordering Information (Note 4 & 5)
Part Number
DMC4029SSD-13
DMC4029SSDQ-13
Compliance
Standard
Automotive
Case
SO-8
SO-8
Packaging
2,500/Tape & Reel
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
8
5
Logo
C4029SD
YY WW
Part no.
Xth week: 01 ~ 53
Year: “13” = 2013
1
4
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© Diodes Incorporated
DMC4029SSD
Document number: DS36350 Rev. 3 - 2
DMC4029SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value_Q2
40
Value_Q1
-40
Units
V
V
Gate-Source Voltage
±20
±20
VGSS
T
A = +25°C
Steady
State
7.0
5.6
-5.1
-4.1
A
A
ID
ID
TA = +70°C
TA = +25°C
Continuous Drain Current (Note 7) VGS = 10V
9.0
7.2
-6.5
-5.2
t<10s
TA = +70°C
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
2.5
70
-2.5
-40
A
A
IS
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
1.3
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 6)
W
°C/W
W
PD
RθJA
PD
0.8
98
59
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
1.8
TA = +25°C
TA = +70°C
Steady state
t<10s
1.1
71
43
Thermal Resistance, Junction to Ambient (Note 7)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
11.8
-55 to +150
RθJC
T
J, TSTG
Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
40
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
1
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
IGSS
±100
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.0
⎯
⎯
⎯
3.0
24
V
mΩ
V
VGS(th)
RDS(ON)
VSD
⎯
15
20
0.7
VDS = VGS, ID = 250µA
V
GS = 10V, ID = 6A
Static Drain-Source On-Resistance
32
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 1.0A
Diode Forward Voltage
1.0
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1060
84
Ciss
Coss
Crss
RG
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
58
1.6
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
8.8
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
19.1
3.0
Qg
nC
V
DS = 20V, ID = 8A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
2.5
Turn-On Delay Time
5.3
Turn-On Rise Time
7.1
VDD = 25V, RL = 2.5Ω
VGS = 10V, RG = 3Ω
nS
Turn-Off Delay Time
15.1
4.8
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10.5
4.15
nS
nC
trr
IF = 8A, di/dt = 100A/μs
IF = 8A, di/dt = 100A/μs
Qrr
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© Diodes Incorporated
DMC4029SSD
Document number: DS36350 Rev. 3 - 2
DMC4029SSD
Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
-1
VGS = 0V, ID = -250µA
µA
nA
V
V
DS = -40V, VGS = 0V
GS = ±20V, VDS = 0V
IGSS
±100
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1.0
⎯
⎯
-3.0
45
V
mΩ
V
VGS(th)
RDS(ON)
VSD
⎯
33
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5A
Static Drain-Source On-Resistance
40
55
V
V
GS = -4.5V, ID = -4A
GS = 0V, IS = -1.0A
Diode Forward Voltage
-0.7
-1.0
⎯
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1154
84
Ciss
Coss
Crss
RG
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = -20V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
66
12.6
10.6
21.5
2.2
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
nC
VDS = -20V, ID = -4.9A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
3.3
Turn-On Delay Time
8.7
Turn-On Rise Time
19.6
34.9
25.5
9.61
3.3
VDS = -20V, ID = -3.9A
VGS = -4.5V, RG = 1Ω
nS
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
nS
nC
trr
IS = -3.9A, dI/dt = 100A/μs
IS = -3.9A, dI/dt = 100A/μs
Qrr
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
N-Channel Q2
20.0
15.0
10.0
5.0
V
= 10V
GS
V
= 5.0V
V
= 5.0V
= 4.5V
DS
GS
GS
V
= 3.5V
GS
V
V
= 4.0V
GS
T
T
= 150°C
= 125°C
A
A
T
= 85°C
V
= 3.0V
A
GS
T
= 25°C
A
T
= -55°C
A
V
= 2.5V
GS
0.0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
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© Diodes Incorporated
DMC4029SSD
Document number: DS36350 Rev. 3 - 2
DMC4029SSD
0.024
0.022
0.2
0.18
0.16
0.14
0.12
0.1
V
= 4.5V
GS
0.02
0.018
0.016
0.014
0.012
0.01
I
= 5.0A
D
V
= 10V
GS
0.08
0.06
0.04
0.02
0.008
0
3
4
5
6
7
8
0
5
10
15
20
ID, DRAIN-SOURCE CURRENT (A)
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical Transfer Characteristic
0.05
0.045
0.04
2
V
= 4.5V
GS
V
= 10V
GS
I
= 10A
D
T
= 150°C
= 125°C
A
1.5
0.035
T
A
V
= 4.5V
GS
I
= 5A
D
0.03
T
T
T
= 85°C
A
1
0.5
0
0.025
= 25°C
A
A
0.02
0.015
0.01
= -55°C
0.005
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
°
C)
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
3
2.8
V
= 4.5V
= 5A
GS
2.6
2.4
2.2
I
D
I
= 1mA
D
2
V
= 10V
GS
I
= 250µA
D
I
= 10A
D
1.8
1.6
1.4
1.2
1
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0
25
50 75 100 125 150
°
C)
°
C)
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DMC4029SSD
Document number: DS36350 Rev. 3 - 2
DMC4029SSD
30
25
20
15
10
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
T
A
= 25°C
A
T
= -55°C
5
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * Rθ
RθJA = 94°C/W
D = 0.005
JA
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Figure 10 Transient Thermal Resistance
P-Channel Q1
30
25
20
V
= -10V
GS
V
= -5.0V
DS
V
= -3.5V
GS
V
= -5.0V
GS
V
= -4.5V
GS
V
= -4.0V
GS
V
= -3.0V
GS
15
10
V
V
= -2.5V
= -2.0V
GS
GS
T
= 125°C
A
T
= 85°C
A
T
= 150°C
5
0
A
T
= 25°C
A
T
= -55°C
A
0
1
2
3
4
5
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
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DMC4029SSD
Document number: DS36350 Rev. 3 - 2
DMC4029SSD
0.2
0.18
0.16
0.14
0.12
0.1
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
V
= -2.5V
V
= -4.5V
GS
GS
T
= 150°C
A
T
= 125°C
A
T
= 85°C
A
0.08
0.06
0.04
0.02
0
T
= 25°C
A
V
= -4.5V
GS
V
= -10V
GS
T
= -55°C
A
0
5
10
15
20
25
30
0
5
10
15
20
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.0
1.5
0.08
0.07
0.06
0.05
0.04
0.03
0.02
V
I
= -10V
GS
= -10A
D
V
I
= -4.5V
GS
= -5A
D
V
I
= -4.5V
GS
= -5A
D
1.0
V
I
= -10V
GS
= -10A
D
0.5
0
0.01
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
°C)
2.0
30
25
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I
= -1mA
D
I
= -250µA
D
15
10
T = 25°C
A
5
0
0.2
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
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Document number: DS36350 Rev. 3 - 2
DMC4029SSD
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Figure 9 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SO-8
Dim
A
A1
A2
A3
b
Min
-
0.10
1.30
0.15
0.3
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7°~9°
h
°
45
1.27 Typ
h
L
θ
-
0.35
0.82
8°
Detail ‘A’
A2
A3
A
0.62
0°
b
e
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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Document number: DS36350 Rev. 3 - 2
DMC4029SSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS36350 Rev. 3 - 2
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