DMC4050SSDQ-13 [DIODES]
Small Signal Field-Effect Transistor, 4.2A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;
| 型号： | DMC4050SSDQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 4.2A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：287K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC4050SSDQ
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
x
x
x
x
x
Matched N & P RDS(ON) – Minimizes Power Losses
Fast Switching – Minimizes Switching Losses
Dual Device – Reduces PCB Area
ID Max
Device
BVDSS
RDS(ON) Max
TA = +25°C
(Notes 7 & 9)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
5.8A
4.2A
45mΩ @ VGS= 10V
60mΩ @ VGS= 4.5V
45mΩ @ VGS= -10V
60mΩ @ VGS= -4.5V
Q1
Q2
40V
x
x
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
-5.8A
-4.2A
-40V
Mechanical Data
Description and Applications
x
x
Case: SO-8
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
x
x
x
x
3-Phase BLDC Motor
CCFL Backlighting
x
SO-8
D1
S1
D2
S2
S1
G1
S2
D1
D1
D2
D2
G1
G2
G2
Top View
Top View
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMC4050SSDQ-13
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
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DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
DMC4050SSDQ
Marking Information
= Manufacturer’s Marking
C4050SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Year (ex: 16 = 2016)
WW = Week (01 - 53)
C4050SD
YY
WW
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
N-Channel - Q1 P-Channel - Q2
Units
40
-40
V
Gate-Source Voltage
r20
5.8
r20
-5.8
VGSS
(Notes 7 & 9)
4.38
4.2
5.3
24.1
2.5
-4.52
-4.2
-5.3
-24.9
-2.5
TA = +70°C (Notes 7 & 9)
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
VGS = 10V
VGS = 10V
ID
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 8 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
A
IDM
IS
24.1
-24.9
ISM
Thermal Characteristics
Characteristic
Symbol
N-Channel - Q1 P-Channel - Q2
Unit
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 6 & 11)
1.25
1.8
2.14
10
14.3
17.2
Power Dissipation
Linear Derating Factor
W
PD
100
70
58
Thermal Resistance, Junction to Ambient
RθJA
°C/W
°C
Thermal Resistance, Junction to Lead
51
RθJL
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note (6), except the device is measured at t d 10 sec.
8. Same as Note (6), except the device is pulsed with D = 0.02 and pulse width 300μs.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
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DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
DMC4050SSDQ
Thermal Characteristics (Continued)
RDS(ON)
RDS(ON)
Limited
10
Limited
10
1
DC
1
DC
1s
1s
100ms
100ms
10ms
100m
10m
100m
10ms
Single Pulse
Tamb= 25°C
1ms
Single Pulse
Tamb= 25°C
1ms
100us
10
100us
10m
One active die
One active die
0.1
1
10
0.1
1
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
2.0
R(theta junction-to-ambient), RT
100
JA
One active die
1.5
1.0
0.5
0.0
Two active die
One active die
80
D=0.5
60
40
Single Pulse
D=0.2
20
D=0.05
D=0.1
0
100μ 1m 10m 100m
1
10
100
1k
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
Single Pulse
Tamb= 25°C
100
10
1
One active die
100μ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
DMC4050SSDQ
Electrical Characteristics (Q1 N-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 12)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
40
—
—
—
—
—
—
1.0
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
±100
IGSS
ON CHARACTERISTICS (Note 12)
Gate Threshold Voltage
0.8
1.3
1.8
V
VGS(TH)
RDS(ON)
|YFS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3A
VGS = 4.5V, ID = 3A
VDS = 5V, ID = 3A
VGS = 0V, IS = 1A
20
33
45
60
Static Drain-Source On-Resistance
—
mΩ
—
—
Forward Transfer Admittance
Diode Forward Voltage (Note 12)
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
12.6
0.7
—
S
V
|
1.0
VSD
—
—
—
—
—
—
—
—
—
—
—
1,790.8
160.6
120.5
1.03
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
CISS
COSS
CRSS
RG
VDS = 20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
37.56
7.8
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
QG
VGS = 10V, VDS = 20V,
ID = 3A
Gate-Source Charge
QGS
QGD
tD(ON)
tR
6.6
Gate-Drain Charge
8.08
Turn-On Delay Time
15.14
24.29
5.27
Turn-On Rise Time
VGS = 10V, VDS = 20V,
ID = 3A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Electrical Characteristics (Q2 P-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 12)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
-40
—
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V
-1.0
±100
μA
nA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
—
IGSS
ON CHARACTERISTICS (Note 12)
Gate Threshold Voltage
-0.8
-1.3
-1.8
V
VGS(TH)
RDS(ON)
|YFS
VDS = VGS, ID = -250μA
VGS = -10V, ID = -3A
VGS = -4.5V, ID = -3A
VDS = -5V, ID = -3A
VGS = 0V, IS = -1A
28
30
45
60
Static Drain-Source On-Resistance
—
mΩ
—
—
Forward Transfer Admittance
Diode Forward Voltage (Note 12)
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
16.6
-0.7
—
S
V
|
-1.0
VSD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1,643.17
179.13
127.82
6.43
pF
pF
pF
Ω
CISS
COSS
CRSS
RG
VDS = -20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
33.66
5.54
nC
nC
nC
ns
ns
ns
ns
QG
VGS = -10V, VDS = -20V,
ID = -3A
Gate-Source Charge
QGS
QGD
tD(ON)
tR
Gate-Drain Charge
7.30
Turn-On Delay Time
6.85
Turn-On Rise Time
14.72
53.65
30.86
VGS = -10V, VDS = -20V,
ID = -3A
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Notes:
12. Short duration pulse test used to minimize self-heating effect.
13. Guaranteed by design. Not subject to production testing.
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DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
DMC4050SSDQ
Typical Characteristics (Q1 N-Channel)
30
30
25
V
= 8.0V
V
= 5V
GS
25
20
15
DS
V
= 4.5V
GS
20
15
10
V
V
= 4.0V
GS
10
5
= 3.5V
= 3.0V
GS
T
= 150°C
A
T
= 85°C
A
5
0
T
= 125°C
A
T
= 25°C
A
V
GS
V
= 2.5V
GS
T
= -55°C
A
0
0
0.5
1
1.5
2
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
Fig. 2 Typical Transfer Characteristic
0.06
0.05
0.04
0.03
V
= 10V
GS
0.04
T
= 150°C
V
= 4.5V
A
GS
0.02
0.01
0
0.03
0.02
T
= 125°C
= 85°C
A
T
A
T
= 25°C
A
V
= 10V
GS
T
= -55°C
A
0.01
0
0
5
10
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
15
20
25
30
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
0.06
0.05
V
= 10V
GS
= 20A
1.5
1.3
1.1
I
D
0.04
0.03
V
= 4.5V
= 10A
GS
V
= 4.5V
GS
= 10A
I
D
I
D
0.02
0.01
0
0.9
V
= 10V
GS
= 20A
0.7
0.5
I
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
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DMC4050SSDQ
3.0
2.7
20
18
16
2.4
2.1
1.8
1.5
1.2
0.9
0.6
T
= 25°C
A
14
12
I
= 1mA
D
10
8
I
= 250μA
D
6
4
2
0
0.3
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
10,000
10,000
1,000
T
= 150°C
= 125°C
C
A
iss
1,000
T
A
100
C
oss
C
T
= 85°C
= 25°C
rss
100
10
A
10
1
T
A
f = 1MHz
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35 40
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
10
8
V
= 20V
DS
= 12A
I
D
6
4
2
0
0
5
10
15
20
25
30
35
40
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
DMC4050SSDQ
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
TJA
TJA
R
= 94°C/W
TJA
D = 0.02
D = 0.01
0.01
P(pk)
t
1
t
2
- T = P * R (t)
D = 0.005
T
J
A
TJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
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DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
DMC4050SSDQ
Typical Characteristics (Q2 P-Channel)
30
30
25
V
= -5V
T
= 150°C
DS
25
A
T
= 85°C
A
T
= 25°C
A
T
= 125°C
A
20
20
15
T
= -55°C
A
15
10
10
5
5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
-VGS, GATE-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Transfer Characteristic
Fig. 13 Typical Output Characteristic
0.04
0.03
0.05
V
= -10V
GS
0.04
0.03
0.02
V
= -4.5V
= -10V
T
= 150°C
GS
A
T
= 125°C
= 85°C
A
T
A
0.02
0.01
0
V
GS
T
= 25°C
A
T
= -55°C
A
0.01
0
0
5
10
15
20
25
30
0
5
10
-ID, DRAIN CURRENT (A)
Fig. 16 Typical On-Resistance
vs. Drain Current and Temperature
15
20
25
30
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 15 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.06
0.05
V
= -10V
GS
I
= -20A
D
0.04
0.03
1.3
1.1
V
= -4.5V
GS
I
= -10A
D
V
= -4.5V
GS
= -10A
I
D
0.9
0.02
0.01
0
V
= -10V
GS
= -20A
I
D
0.7
0.5
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 18 On-Resistance Variation with Temperature
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DMC4050SSDQ
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DMC4050SSDQ
2.0
1.5
20
18
16
T
= 25°C
14
12
A
I
= -1mA
D
1.0
10
8
I
= -250μA
D
6
0.5
0
4
2
0
-50 -25
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
TA, AMBIENT TEMPERATURE (°C)
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
10,000
Fig. 20 Diode Forward Voltage vs. Current
10,000
1,000
T
T
= 150°C
= 125°C
A
C
iss
1,000
A
100
C
oss
T
= 85°C
C
A
100
rss
10
1
T
= 25°C
A
10
0
5
10
15
20
25
30
35 40
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 21 Typical Total Capacitance
10
8
V
= -20V
DS
I
= -12A
D
6
4
2
0
0
5
10
15
20
25
30
35
40
Qg, TOTAL GATE CHARGE (nC)
Fig. 23 Gate-Charge Characteristics
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Document number: DS38781 Rev. 1 - 2
DMC4050SSDQ
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
TJA
R
TJA
= 94°C/W
TJA
D = 0.02
P(pk)
0.01 D = 0.01
t
1
t
2
- T = P * R (t)
T
D = 0.005
J
A
TJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 24 Transient Thermal Response
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DMC4050SSDQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
SO-8
Min
–
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
Detail ‘A’
7°~9°
h
1.27 Typ
°
45
h
L
Tꢀꢀ
–
0.62
0°
0.35
0.82
8°
Detail ‘A’
A2
A3
A
b
e
All Dimensions in mm
D
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SO-8
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
1.27
C1
C2
Y
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Document number: DS38781 Rev. 1 - 2
DMC4050SSDQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
www.diodes.com
12 of 12
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April 2016
© Diodes Incorporated
DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
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