DMC4040SSD-13 [DIODES]
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET; 40V互补对增强型MOSFET
| 型号： | DMC4040SSD-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总11页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
DMC4040SSD
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
Matched N & P RDS(on) - Minimizes power losses
Fast switching – Minimizes switching losses
Dual device – Reduces PCB area
ID max (A)
Device
V(BR)DSS
RDS(on) max
TA = 25°C
(Notes 3 & 5)
•
•
"Green" component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
7.5
6.2
25mΩ @ VGS= 10V
40mΩ @ VGS= 4.5V
25mΩ @ VGS= -10V
45mΩ @ VGS= -4.5V
Q1
Q2
40V
-7.3
-5.7
-40V
Mechanical Data
•
•
Case: SO-8
Description and Applications
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
This MOSFET has been designed to ensure that RDS(on) of N and P
channel FET are matched to minimize losses in both arms of the
bridge. The DMC4040SSD is optimized for use in 3 phases brushless
DC motor circuits (BLDC), CCFL backlighting.
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (approximate)
•
•
3 phases BLDC motor
CCFL backlighting
D1
D2
S1
G1
S2
D1
SO-8
D1
D2
D2
G1
G2
G2
S1
S2
Top View
Top View
Q1 N-Channel
Q2 P-Channel
Equivalent Circuit
Ordering Information (Note 1)
Product
DMC4040SSD-13
Marking
C4040SD
Reel size (inches)
Tape width (mm)
Quantity per reel
13
12
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information about
Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
= Manufacturer’s Marking
C4040SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
C4040SD
YY
WW
WW = Week (01 - 53)
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© Diodes Incorporated
DMC4040SSD
Document number: DS32120 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMC4040SSD
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
N-Channel - Q1 P-Channel - Q2
Unit
40
-40
V
Gate-Source Voltage
VGSS
±20
7.5
5.8
5.7
6.8
±20
-7.5
-5.8
-5.7
-6.8
-29.0
-3.0
-29.0
(Notes 3 & 5)
TA = 70°C (Notes 3 & 5)
Continuous Drain Current
Pulsed Drain Current
V
V
GS = 10V
GS = 10V
ID
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 4 & 5)
(Notes 3 & 5)
(Notes 4 & 5)
A
29.0
3.0
IDM
IS
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
29.0
ISM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
N-Channel - Q1 P-Channel - Q2
Unit
1.25
10
(Notes 2 & 5)
W
mW/°C
Power Dissipation
(Notes 2 & 6)
1.8
PD
Linear Derating Factor
14.3
2.14
17.2
100
70
58
51
(Notes 3 & 5)
(Notes 2 & 5)
Thermal Resistance, Junction to Ambient
(Notes 2 & 6)
(Notes 3 & 5)
(Notes 5 & 7)
RθJA
RθJL
°C/W
°C
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
-55 to +150
T
J, TSTG
Notes:
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
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DMC4040SSD
Document number: DS32120 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMC4040SSD
Thermal Characteristics
RDS(ON)
RDS(ON)
Limited
10
Limited
10
1
DC
1
DC
1s
1s
100ms
100ms
100m
10ms
100m
10m
10ms
Single Pulse
Tamb= 25°C
1ms
Single Pulse
Tamb= 25°C
1ms
100us
10
100us
10
10m
One active die
One active die
0.1
1
0.1
1
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
2.0
R(theta junction-to-ambient), RθJA
100
One active die
1.5
1.0
0.5
0.0
Two active die
One active die
80
D=0.5
60
40
Single Pulse
D=0.2
20
D=0.05
D=0.1
0
100µ 1m 10m 100m
1
10
100
1k
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
Single Pulse
Tamb= 25°C
100
10
1
One active die
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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© Diodes Incorporated
DMC4040SSD
Document number: DS32120 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMC4040SSD
Electrical Characteristics – Q1 N-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
40
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
1.0
ID = 250μA, VGS= 0V
VDS= 40V, VGS= 0V
GS= ±20V, VDS= 0V
μA
nA
IGSS
±100
V
ON CHARACTERISTICS
Gate Threshold Voltage
0.8
1.3
0.013
0.028
12.6
0.7
1.8
0.025
0.040
⎯
V
VGS(th)
ID= 250μA, VDS= VGS
V
V
GS= 10V, ID= 3A
GS= 4.5V, ID= 3A
Static Drain-Source On-Resistance (Note 8)
Ω
RDS (ON)
⎯
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
S
V
gfs
⎯
⎯
VDS= 5V, ID= 3A
IS= 1A, VGS= 0V
1.0
VSD
1790
160
120
1.03
16.0
37.6
7.8
Ciss
Coss
Crss
Rg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS= 20V, VGS= 0V
Output Capacitance
pF
f= 1MHz
Reverse Transfer Capacitance
Gate Resistance
Ω
V
DS= 0V, VGS= 0V, f= 1MHz
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Qg
VGS= 4.5V
Qg
V
DS= 20V
nC
ns
ID= 3A
Qgs
Qgd
tD(on)
tr
VGS= 10V
6.6
8.1
15.1
24.3
5.3
VDD= 20V, VGS= 10V
ID= 3A
tD(off)
tf
Notes:
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics – Q1 N-Channel
30
30
25
V
= 8.0V
V
= 5V
GS
25
20
15
DS
V
= 4.5V
20
GS
15
10
V
V
= 4.0V
GS
10
5
= 3.5V
= 3.0V
GS
T
= 150°C
A
T
= 85°C
A
5
0
T
= 125°C
A
T
= 25°C
A
V
GS
V
= 2.5V
T
= -55°C
GS
A
0
0
1
2
3
4
5
0
0.5
1
1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
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DMC4040SSD
Document number: DS32120 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMC4040SSD
0.06
0.05
0.04
0.03
V
= 10V
GS
0.04
T
= 150°C
A
0.03
0.02
0.02
0.01
0
T
= 125°C
= 85°C
A
V
= 4.5V
GS
T
A
T
= 25°C
A
T
= -55°C
A
V
= 10V
GS
0.01
0
0
5
10
15
20
25
30
0
5
10
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.06
0.05
V
= 10V
GS
I
= 20A
D
0.04
0.03
1.3
1.1
V
= 4.5V
= 10A
GS
V
= 4.5V
GS
I
D
I
= 10A
D
0.9
0.02
0.01
0
V
= 10V
GS
0.7
0.5
I
= 20A
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
3.0
20
18
16
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
T
= 25°C
A
14
12
I
= 1mA
D
10
8
I
= 250µA
D
6
4
2
0
0.3
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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DMC4040SSD
Document number: DS32120 Rev. 2 - 2
A Product Line of
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DMC4040SSD
10,000
1,000
10,000
1,000
T
= 150°C
C
A
iss
T
= 125°C
A
100
C
oss
C
T
= 85°C
= 25°C
rss
100
10
A
10
1
T
A
f = 1MHz
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35 40
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
10
8
V
= 20V
DS
I
= 12A
D
6
4
2
0
0
5
10
15
20
25
30
35
40
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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© Diodes Incorporated
DMC4040SSD
Document number: DS32120 Rev. 2 - 2
A Product Line of
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DMC4040SSD
Electrical Characteristics – Q2 P-CHANNEL @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-40
–
–
–
–
–
V
BVDSS
IDSS
ID = -250μA, VGS = 0V
VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V
-1.0
±100
μA
nA
–
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
-0.8
–
-1.3
0.018
0.030
16.6
-1.8
0.025
0.045
–
V
VGS(th)
RDS(on)
ID = -250μA, VDS = VGS
V
GS = -10V, ID = -3A
Static Drain-Source On-Resistance (Note 11)
Ω
VGS = -4.5V, ID = -3A
VDS = -5V, ID = -3A
IS = -1A, VGS = 0V
–
–
Forward Transconductance (Notes 11 & 12)
Diode Forward Voltage (Note 11)
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
S
V
gfs
-0.7
-1.0
VSD
–
–
–
–
–
–
1643
179
128
6.43
14.0
33.7
5.5
Ciss
Coss
Crss
Rg
VDS = -20V, VGS = 0V
f = 1MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
⎯
–
–
–
–
–
–
–
–
⎯
–
–
–
–
–
–
–
–
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (Note 13)
Total Gate Charge (Note 13)
Gate-Source Charge (Note 13)
Gate-Drain Charge (Note 13)
Turn-On Delay Time (Note 13)
Turn-On Rise Time (Note 13)
Turn-Off Delay Time (Note 13)
Turn-Off Fall Time (Note 13)
Qg
V
GS = -4.5V
Qg
VDS = -20V
D = -3A
nC
ns
I
Qgs
Qgd
tD(on)
tr
VGS = -10V
7.3
6.9
14.7
53.7
30.9
VDD = -20V, VGS = -10V
D = -3A
I
tD(off)
tf
Notes:
11.Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics – Q2 P-Channel
30
30
25
V
= -5V
T
= 150°C
DS
25
A
T
= 85°C
A
T
= 25°C
A
T
= 125°C
A
20
20
15
T
= -55°C
A
15
10
10
5
5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
-VGS, GATE-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 13 Typical Transfer Characteristic
Fig. 12 Typical Output Characteristic
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DMC4040SSD
Document number: DS32120 Rev. 2 - 2
A Product Line of
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DMC4040SSD
0.04
0.03
0.05
0.04
V
= -10V
GS
T
= 150°C
A
T
= 125°C
= 85°C
V
= -4.5V
A
0.03
0.02
GS
T
A
0.02
0.01
0
T
= 25°C
A
V
= -10V
GS
T
= -55°C
A
0.01
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-ID, DRAIN-SOURCE CURRENT (A)
-ID, DRAIN CURRENT (A)
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
1.7
1.5
0.06
0.05
V
= -10V
GS
I
= -20A
D
0.04
1.3
1.1
V
= -4.5V
GS
I
= -10A
D
V
= -4.5V
0.03
0.02
0.01
0
GS
I
= -10A
D
0.9
V
= -10V
GS
I
= -20A
D
0.7
0.5
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 16 On-Resistance Variation with Temperature
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
2.0
1.5
20
18
16
T
= 25°C
14
12
A
I
= -1mA
D
1.0
10
8
I
= -250µA
D
6
0.5
0
4
2
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 19 Diode Forward Voltage vs. Current
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Document number: DS32120 Rev. 2 - 2
A Product Line of
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DMC4040SSD
10,000
1,000
10,000
1,000
T
T
= 150°C
= 125°C
A
C
C
iss
A
100
oss
T
= 85°C
A
C
100
10
rss
10
1
T
= 25°C
A
0
5
10
15
20
25
30
35 40
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 20 Typical Total Capacitance
10
8
V
= -20V
DS
I
= -12A
D
6
4
2
0
0
5
10
15
20
25
30
35
40
Qg, TOTAL GATE CHARGE (nC)
Fig. 22 Gate-Charge Characteristics
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Document number: DS32120 Rev. 2 - 2
A Product Line of
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DMC4040SSD
Package Outline Dimensions
SO-8
Min
-
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
Detail ‘A’
7°~9°
h
1.27 Typ
°
45
h
L
θ
-
0.35
0.82
8°
Detail ‘A’
A2
A3
0.62
0°
A
b
e
All Dimensions in mm
D
Suggested Pad Layout
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
C2
1.27
Y
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Document number: DS32120 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMC4040SSD
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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March 2011
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DMC4040SSD
Document number: DS32120 Rev. 2 - 2
相关型号：
DMC4040SSDQ-13
Small Signal Field-Effect Transistor, 5.7A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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Small Signal Field-Effect Transistor, 7A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI5-F3-B, SC-113CB, 5 PIN
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