DMC4047LSD-13 [DIODES]
Small Signal Field-Effect Transistor, 7A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;
| 型号： | DMC4047LSD-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 7A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC4047LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Input Capacitance
ID
Device
Q2
V(BR)DSS
RDS(on) max
TA = +25°C
Low On-Resistance
Fast Switching Speed
6.9A
6.0A
-5.1A
-4.5A
24mΩ @ VGS = 10V
32mΩ @ VGS = 4.5V
45mΩ @ VGS = -10V
55mΩ @ VGS = -4.5V
40V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Q1
-40V
Mechanical Data
Description
Case: SO-8
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
)
performance, making it ideal for high efficiency power management
applications.
Terminals: Finish – Matte Tin annealed over Copper leadframe
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
D2
D1
S2
D2
G2
S1
G1
D2
D1
D1
G2
G1
S2
S1
P-Channel MOSFET
TOP VIEW
Internal Schematic
Top View
N-Channel MOSFET
Ordering Information (Note 4)
Part Number
Case
Packaging
DMC4047LSD-13
SO-8
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
C4047SD = Product Type Marking Code
YYWW =Date Code Marking
YY or YY = Year (ex: 13 = 2013)
C4047SD
YY WW
C4047SD
YY
WW
WW =Week (01 - 53)
YY = Date Code Marking forSAT (Shanghai Assembly/ Test site)
YY= Date Code Marking forCAT (Chengdu Assembly/ Test site)
1
4
1
4
Shanghai A/T Site
Chengdu A/T Site
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© Diodes Incorporated
DMC4047LSD
Document number: DS36206 Rev. 4 - 2
DMC4047LSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value_Q2
40
Value_Q1
-40
Units
V
V
Gate-Source Voltage
±20
±20
VGSS
Steady
State
TA = +25°C
7.0
5.6
-5.1
-4.1
A
A
ID
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) VGS = 10V
9.0
7.2
-6.5
-5.2
t<10s
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Notes 7) L = 0.1mH
2.5
70
20
20
-2.5
-40
20
A
A
IS
IDM
IAR
EAR
A
Repetitive Avalanche Energy (Notes 7) L = 0.1mH
20
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
R
Value
Units
1.3
0.8
98
T
A = +25°C
Total Power Dissipation (Note 5)
W
°C/W
W
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
JA
59
1.8
TA = +25°C
TA = +70°C
Steady state
t<10s
PD
1.1
71
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
43
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
11.8
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
40
V
BVDSS
IDSS
1
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current
Gate-Source Leakage
µA
nA
IGSS
100
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1.4
2.4
24
V
mꢀ
V
VGS(th)
RDS(ON)
VSD
15
20
0.7
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 1.0A
Static Drain-Source On-Resistance
32
Diode Forward Voltage
1.0
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
1060
84
Ciss
Coss
Crss
RG
Qg
VDS = 20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
58
1.6
ꢀ
VDS = 0V, VGS = 0V, f = 1.0MHz
8.8
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
19.1
3.0
Qg
nC
V
DS = 20V, ID = 8A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
2.5
Turn-On Delay Time
5.3
Turn-On Rise Time
7.1
VDD = 25V, RL = 2.5ꢀ
VGS = 10V, RG = 3ꢀ
nS
Turn-Off Delay Time
15.1
4.8
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
10.5
4.15
nS
nC
trr
IF = 8A, di/dt = 100A/μs
IF = 8A, di/dt = 100A/μs
Qrr
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© Diodes Incorporated
DMC4047LSD
Document number: DS36206 Rev. 4 - 2
DMC4047LSD
Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = -250µA
-40
-1
V
V
V
DS = -40V, VGS = 0V
GS = ±20V, VDS = 0V
µA
nA
IGSS
100
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5A
-1.0
33
-2.2
45
V
mꢀ
V
Static Drain-Source On-Resistance
V
V
GS = -4.5V, ID = -4A
GS = 0V, IS = -1.0A
40
55
Diode Forward Voltage
-0.7
-1.0
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
Coss
Crss
RG
Qg
1154
84
VDS = -20V, VGS = 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
66
VDS = 0V, VGS = 0V, f = 1.0MHz
12.6
10.6
21.5
2.2
ꢀ
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
nC
VDS = -20V, ID = -4.9A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
3.3
Turn-On Delay Time
8.7
Turn-On Rise Time
19.6
34.9
25.5
9.61
3.30
VDS = -20V, ID = -3.9A
nS
VGS = -4.5V, RG = 1ꢀ
tD(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
trr
IS = -3.9A, dI/dt = 100A/μs
IS = -3.9A, dI/dt = 100A/μs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
nS
nC
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMC4047LSD
Document number: DS36206 Rev. 4 - 2
DMC4047LSD
N-Channel Q2
20.0
15.0
30
25
20
15
10
V
= 10V
GS
V
V
= 5.0V
= 4.5V
V
= 3.5V
GS
GS
GS
V
= 85°C
GS
V
V
= 150°C
GS
V
= 4.0V
GS
10.0
5.0
= 25°C
GS
V
= 125°C
GS
V
= 3.0V
GS
V
= -55°C
GS
5
0
V
= 2.5V
GS
0.0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS, DRAIN-SOURCE VOLTAGE(V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
T = 150°C
A
V
= 4.5V
GS
T = 125°C
A
T = 85°C
A
T = 25°C
A
V
= 10.0V
GS
T = -55°C
A
0
5
10
15
20
0
5
10
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
ID, DRAIN CURRENT(A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
2
1.5
1
0.04
V
= 10V
GS
0.035
I
= 10A
D
0.03
0.025
0.02
V
= 4.5V
GS
V
= 4.5V
I
= 5.0A
GS
D
I
= 5.0A
D
0.015
0.01
V
= 10V
GS
I
= 10A
D
0.5
0
0.005
0
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
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DMC4047LSD
Document number: DS36206 Rev. 4 - 2
DMC4047LSD
3
2.8
2.6
2.4
2.2
2
30
25
20
15
10
5
T
= 150°C
A
T
= 25°C
A
I
=1mA
D
T
= -55°C
A
T
= 85°C
A
1.8
1.6
1.4
1.2
1
I
=250µA
D
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Theshold Variation vs Ambient Temperature
0
25
50
75 100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
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DMC4047LSD
Document number: DS36206 Rev. 4 - 2
DMC4047LSD
P-Channel Q1
30.0
25.0 V
20.0
15.0
10.0
5.0
30
25
20
15
10
5
V
= -10V
GS
V
= -5.0V
V
= -3.5V
DS
GS
= -5.0V
GS
V
= -4.5V
GS
V
= -3.0V
GS
V
= -4.0V
GS
T
= 150C
V
= -2.5V
A
GS
T
= 85C
A
T
= 125C
A
T
= 25C
A
V
= -2.0V
T
= -55C
GS
A
0.0
0
0
1
2
3
4
5
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 9 Typical Output Characteristics
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 10 Typical Transfer Characteristics
0.2
0.18
0.16
0.14
0.12
0.1
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
V
= -4.5V
GS
V
= -2.5V
GS
T
= 150C
A
T
= 125C
A
T
A
= 85C
A
0.08
0.06
0.04
0.02
T
= 25C
V
= -4.5V
GS
T
= -55C
V
= -10V
A
GS
0
0
0
5
10
15
20
25
30
5
10
15
20
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT (A)
Figure 12 Typical On-Resistance vs.
Drain Current and Temperature
Figure 11 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
1.5
1
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
V
I
= -10V
GS
= -10A
D
V
I
= -4.5V
GS
= -5A
D
V
= -4.5V
GS
I
= -5A
D
V
= -10V
GS
I
= -10A
D
0.5
0
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 14 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 13 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
C)
C)
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DMC4047LSD
Document number: DS36206 Rev. 4 - 2
DMC4047LSD
2
30
25
20
15
10
5
1.8
1.6
1.4
1.2
-I = 1mA
D
-I = 250µA
D
1
T = 25C
A
0.8
0.6
0.4
0.2
0
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
-VSD, SOURCE-DRAIN VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 16 Diode Forward Voltage vs. Current
Figure 15 Gate Threshold Variation vs. Ambient Temperature
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.9
D = 0.05
D = 0.02
D = 0.01
D = 0.005
RJA(t) = r(t) * R
JA
RJA = 94°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Figure 17 Transient Thermal Resistance
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DMC4047LSD
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DMC4047LSD
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SO-8
Min
-
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
D
E
E1
e
4.85
5.90
3.85
4.95
6.10
3.95
7°~9°
h
°
45
1.27 Typ
h
L
-
0.35
0.82
8
Detail ‘A’
A2
A3
A
0.62
0
b
e
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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DMC4047LSD
Document number: DS36206 Rev. 4 - 2
DMC4047LSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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Document number: DS36206 Rev. 4 - 2
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