DMC4040SSDQ-13 [DIODES]
Small Signal Field-Effect Transistor, 5.7A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;
| 型号： | DMC4040SSDQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 5.7A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC4040SSDQ
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
Reduced Footprint with Two Discrete Devices in Single SO-8
Low On-Resistance
ID max
TA = +25°C
(Note 7 & 9)
Device
V(BR)DSS
RDS(on) max
Fast Switching Speed
7.5A
6.2A
-7.3A
-5.7A
25mΩ @ VGS= 10V
40mΩ @ VGS= 4.5V
25mΩ @ VGS= -10V
45mΩ @ VGS= -4.5V
Low Input/Output Leakage
Q1
Q2
40V
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Available (Note 4)
-40V
Description and Applications
Mechanical Data
This MOSFET has been designed to ensure that RDS(on) of N and P
channel FET are matched to minimize losses in both arms of the
bridge. The DMC4040SSDQ is optimized for use in 3 phases
brushless DC motor circuits (BLDC), CCFL backlighting.
•
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See diagram below
Terminals: Finish - Matte Tin annealed over Copper lead frame.
•
•
3 phases BLDC motor
CCFL backlighting
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
e3
•
D1
D2
SO-8
S1
G1
S2
D1
G1
G2
D1
D2
D2
S1
S2
G2
Q1 N-Channel
Q2 P-Channel
Top View
Top View
Equivalent Circuit
Ordering Information (Note 4 & 5)
Part Number
DMC4040SSDQ-13
Compliance
Automotive
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
= Manufacturer’s Marking
C4040SD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
C4040SD
YY WW
WW = Week (01 - 53)
1
4
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DMC4040SSDQ
Document number: DS37235 Rev. 2 - 2
DMC4040SSDQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
N-Channel - Q1 P-Channel - Q2
Units
40
-40
V
V
Gate-Source Voltage
VGSS
±20
7.5
±20
-7.5
-5.8
-5.7
-6.8
-29.0
(Notes 7 & 9)
5.8
TA = +70°C (Notes 7 & 9)
Continuous Drain Current
A
V
V
GS = 10V
GS = 10V
ID
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 8 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
5.7
6.8
Pulsed Drain Current
29.0
A
A
A
IDM
IS
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
3.0
-3.0
29.0
-29.0
ISM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
N-Channel - Q1 P-Channel - Q2
Unit
1.25
10
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
Power Dissipation
Linear Derating Factor
W
mW/°C
1.8
14.3
PD
2.14
17.2
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 9 & 11)
100
70
Thermal Resistance, Junction to Ambient
RθJA
°C/W
°C
58
Thermal Resistance, Junction to Lead
51
RθJL
Operating and Storage Temperature Range
-55 to +150
T
J, TSTG
Notes:
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t ≤ 10 sec.
8. Same as note (6), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
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DMC4040SSDQ
Document number: DS37235 Rev. 2 - 2
DMC4040SSDQ
Thermal Characteristics
RDS(ON)
RDS(ON)
Limited
10
10 Limited
DC
1
DC
1
1s
1s
100ms
100ms
100m
10ms
100m
10m
10ms
Single Pulse
Tamb= 25°C
1ms
1ms
Single Pulse
Tamb= 25°C
100us
10
100us
10m
One active die
One active die
0.1
1
10
0.1
1
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
2.0
R(theta junction-to-ambient), RθJA
One active die
100
80
60
40
20
0
1.5
1.0
0.5
0.0
Two active die
One active die
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m
1
10
100
1k
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Derating Curve
Single Pulse
Tamb= 25°C
100
10
1
One active die
100µ 1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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DMC4040SSDQ
Document number: DS37235 Rev. 2 - 2
DMC4040SSDQ
Electrical Characteristics – Q1 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
40
—
—
—
—
—
—
1.0
V
BVDSS
IDSS
ID = 250µA, VGS = 0V
µA
nA
VDS = 40V, VGS = 0V
IGSS
±100
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
0.8
—
1.3
0.013
0.028
12.6
0.7
1.8
0.025
0.040
—
V
VGS(th)
ID = 250µA, VDS = VGS
VGS = 10V, ID = 3A
Static Drain-Source On-Resistance (Note 12)
Ω
RDS (ON)
V
GS = 4.5V, ID = 3A
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 8)
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
—
—
S
V
gfs
VDS = 5V, ID = 3A
IS = 1A, VGS = 0V
1.0
VSD
—
—
—
—
—
—
—
—
—
—
—
—
1790
160
120
1.03
16.0
37.6
7.8
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 20V, VGS = 0V
F = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS= 0V, f = 1MHz
VGS = 4.5V
Total Gate Charge (Note 14)
Total Gate Charge (Note 14)
Gate-Source Charge (Note 14)
Gate-Drain Charge (Note 14)
Turn-On Delay Time (Note 14)
Turn-On Rise Time (Note 14)
Turn-Off Delay Time (Note 14)
Turn-Off Fall Time (Note 14)
nC
nC
nC
nC
ns
ns
ns
ns
Qg
Qg
VDS = 20V
ID = 3A
Qgs
Qgd
tD(on)
tr
VGS = 10V
6.6
8.1
15.1
24.3
5.3
VDD = 20V, VGS = 10V
ID = 3A
tD(off)
tf
Notes:
12. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics – Q1 N-Channel
30
30
25
V
= 8.0V
V
= 5V
GS
25
20
15
DS
V
= 4.5V
20
GS
15
10
V
V
= 4.0V
GS
10
5
= 3.5V
= 3.0V
GS
T
= 150°C
A
T
= 85°C
A
5
0
T
= 125°C
A
T
= 25°C
A
V
GS
V
= 2.5V
T
= -55°C
GS
A
0
0
1
2
3
4
5
0
0.5
1
1.5
2
VGS, GATE-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
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DMC4040SSDQ
Document number: DS37235 Rev. 2 - 2
DMC4040SSDQ
0.06
0.05
0.04
0.03
V
= 10V
GS
0.04
T
= 150°C
A
0.03
0.02
0.02
0.01
0
T
= 125°C
= 85°C
A
V
= 4.5V
GS
T
A
T
= 25°C
A
T
= -55°C
A
V
= 10V
GS
0.01
0
0
5
10
15
20
25
30
0
5
10
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
15
20
25
30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.7
1.5
0.06
0.05
V
= 10V
GS
I
= 20A
D
0.04
0.03
1.3
1.1
V
= 4.5V
= 10A
GS
V
= 4.5V
GS
I
D
I
= 10A
D
0.9
0.02
0.01
0
V
= 10V
GS
0.7
0.5
I
= 20A
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
3.0
20
18
16
2.7
2.4
2.1
1.8
1.5
1.2
0.9
0.6
T
= 25°C
A
14
12
I
= 1mA
D
10
8
I
= 250µA
D
6
4
2
0
0.3
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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DMC4040SSDQ
Document number: DS37235 Rev. 2 - 2
DMC4040SSDQ
10,000
1,000
10,000
1,000
T
T
= 150°C
C
A
iss
= 125°C
A
100
C
oss
C
T
= 85°C
= 25°C
rss
100
10
A
10
1
T
A
f = 1MHz
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35 40
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 9 Typical Total Capacitance
10
8
V
= 20V
DS
I
= 12A
D
6
4
2
0
0
5
10
15
20
25
30
35
40
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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DMC4040SSDQ
Document number: DS37235 Rev. 2 - 2
DMC4040SSDQ
Electrical Characteristics – Q2 P-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-40
—
—
—
—
—
V
BVDSS
IDSS
ID = -250µA, VGS = 0V
-1.0
±100
µA
nA
VDS = -40V, VGS = 0V
—
IGSS
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
-0.8
—
-1.3
0.018
0.030
16.6
-1.8
0.025
0.045
—
V
VGS(th)
ID = -250µA, VDS = VGS
VGS = -10V, ID = -3A
Static Drain-Source On-Resistance (Note 15)
Ω
RDS (ON)
V
GS = -4.5V, ID = -3A
Forward Transconductance (Notes 15 & 16)
Diode Forward Voltage (Note 15)
DYNAMIC CHARACTERISTICS (Note 16)
Input Capacitance
—
—
S
V
gfs
VDS = -5V, ID = -3A
IS = -1A, VGS = 0V
-0.7
-1.0
VSD
—
—
—
—
—
—
—
—
—
—
—
—
1643
179
128
6.43
14.0
33.7
5.5
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
V
DS = -20V, VGS = 0V
Output Capacitance
F = 1MHz
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V
Total Gate Charge (Note 17)
Total Gate Charge (Note 17)
Gate-Source Charge (Note 17)
Gate-Drain Charge (Note 17)
Turn-On Delay Time (Note 17)
Turn-On Rise Time (Note 17)
Turn-Off Delay Time (Note 17)
Turn-Off Fall Time (Note 17)
nC
nC
nC
nC
ns
ns
ns
ns
Qg
Qg
VDS = -20V
ID = -3A
Qgs
Qgd
tD(on)
tr
VGS = -10V
7.3
6.9
14.7
53.7
30.9
VDD = -20V, VGS = -10V
ID = -3A
tD(off)
tf
Notes:
15. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%
16. For design aid only, not subject to production testing.
17. Switching characteristics are independent of operating junction temperatures
Typical Characteristics – Q2 P-Channel
30
25
30
25
V
= -5V
T
= 150°C
DS
A
T
= 85°C
A
T
= 25°C
A
T
= 125°C
A
20
20
15
T
= -55°C
A
15
10
10
5
5
0
0
0
1
2
3
4
5
0
0.5
1
1.5
2
-VGS, GATE-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Transfer Characteristic
Fig. 13 Typical Output Characteristic
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DMC4040SSDQ
Document number: DS37235 Rev. 2 - 2
DMC4040SSDQ
0.04
0.03
0.05
0.04
V
= -10V
GS
T
= 150°C
A
T
= 125°C
= 85°C
V
= -4.5V
A
0.03
0.02
GS
T
A
0.02
0.01
0
T
= 25°C
A
V
= -10V
GS
T
= -55°C
A
0.01
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
-ID, DRAIN-SOURCE CURRENT (A)
-ID, DRAIN CURRENT (A)
Fig. 15 Typical On-Resistance
vs. Drain Current and Gate Voltage
Fig. 16 Typical On-Resistance
vs. Drain Current and Temperature
1.7
1.5
0.06
0.05
V
= -10V
GS
I
= -20A
D
0.04
1.3
1.1
V
= -4.5V
GS
I
= -10A
D
V
= -4.5V
0.03
0.02
0.01
0
GS
I
= -10A
D
0.9
V
= -10V
GS
I
= -20A
D
0.7
0.5
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 18 On-Resistance Variation with Temperature
2.0
1.5
20
18
16
T
= 25°C
14
12
A
I
= -1mA
D
1.0
10
8
I
= -250µA
D
6
0.5
0
4
2
0
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 19 Gate Threshold Variation vs. Ambient Temperature
0
25
50
75 100 125 150
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 20 Diode Forward Voltage vs. Current
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Document number: DS37235 Rev. 2 - 2
DMC4040SSDQ
10,000
1,000
10,000
1,000
T
T
= 150°C
A
C
C
iss
= 125°C
= 85°C
A
100
oss
T
C
A
100
10
rss
10
1
T
= 25°C
A
0
5
10
15
20
25
30
35 40
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Leakage Current
vs. Drain-Source Voltage
Fig. 21 Typical Total Capacitance
10
8
V
= -20V
DS
I
= -12A
D
6
4
2
0
0
5
10
15
20
25
30
35
40
Qg, TOTAL GATE CHARGE (nC)
Fig. 23 Gate-Charge Characteristics
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DMC4040SSDQ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SO-8
Min
-
0.10
1.30
0.15
0.3
Dim
A
A1
A2
A3
b
Max
1.75
0.20
1.50
0.25
0.5
E1
E
Gauge Plane
Seating Plane
A1
L
D
E
E1
e
h
L
θ
4.85
5.90
3.85
1.27 Typ
-
0.62
0°
4.95
6.10
3.95
Detail ‘A’
7°~9°
h
°
45
0.35
0.82
8°
Detail ‘A’
A2
A3
A
b
All Dimensions in mm
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
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DMC4040SSDQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
11 of 11
www.diodes.com
May 2014
© Diodes Incorporated
DMC4040SSDQ
Document number: DS37235 Rev. 2 - 2
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