DMC4015SSD-13 [DIODES]
Small Signal Field-Effect Transistor, 8.6A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;![DMC4015SSD-13](http://pdffile.icpdf.com/pdf2/p00278/img/icpdf/DMC4015SSD-1_1662396_icpdf.jpg)
型号: | DMC4015SSD-13 |
厂家: | ![]() |
描述: | Small Signal Field-Effect Transistor, 8.6A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 光电二极管 晶体管 |
文件: | 总9页 (文件大小:488K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
DMC4015SSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Input Capacitance
ID
Device
V(BR)DSS
RDS(ON)
Low On-Resistance
TA = +25°C
Fast Switching Speed
12.2A
10.6A
-8.8A
-7.1A
15mΩ @ VGS = 10V
20mΩ @ VGS = 4.5V
29mΩ @ VGS = -10V
45mΩ @ VGS = -4.5V
Q1
40V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Q2
-40V
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Terminals: Finish – Matte Tin Annealed over Copper Leadframe
e3
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
SO-8
D2
S2
D1
S1
D1
Pin1
G1
S2
G2
D1
D2
D2
G2
G1
S1
Top View
Pin Configuration
Top View
Q N-Channel MOSFET
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Part Number
Case
Packaging
DMC4015SSD-13
SO-8
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
= Manufacturer’s Marking
C4015SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
C4015SD
YY WW
1
4
1 of 9
www.diodes.com
November 2014
© Diodes Incorporated
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
DMC4015SSD
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value_Q1
40
Value_Q2
-40
Units
V
V
Gate-Source Voltage
±20
±20
VGSS
Steady
State
TA = +25°C
8.6
6.8
-6.2
-4.9
A
A
ID
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 6) VGS = 10V
12.2
9.8
-8.8
-7.1
t<10s
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 7) L = 0.1mH
2.5
80
27
37
-2.2
-50
-25
32
A
A
IS
IDM
IAS
EAS
A
Avalanche Energy (Note 7) L = 0.1mH
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
R
Value
Units
1.2
0.9
106
45
TA = +25°C
TA = +70°C
Total Power Dissipation (Note 5)
W
°C/W
W
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
JA
1.7
1.1
76
TA = +25°C
TA = +70°C
Steady State
t<10s
PD
Thermal Resistance, Junction to Ambient (Note 6)
R
JA
37
°C/W
°C
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
12
R
JC
-55 to +150
TJ, TSTG
Electrical Characteristics N-Channel Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
40
V
BVDSS
IDSS
1
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = ±20V, VDS = 0V
µA
nA
IGSS
100
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
1
3
V
mΩ
V
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = 250µA
VGS = 10V, ID = 3A
VGS = 4.5V, ID = 3A
VGS = 0V, IS = 1A
15
20
1.0
Static Drain-Source On-Resistance
0.7
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
Coss
Crss
RG
1810
135
VDS = 20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
112
1.7
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
19
40
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
Qg
nC
VDS = 20V, ID = 3A
5.5
6.3
5.1
5.7
23
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDD = 20V, ID = 3A
nS
Turn-Off Delay Time
VGS = 10V, RG = 3Ω,
tD(off)
tf
6.3
Turn-Off Fall Time
12.2
5.4
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
nS
nC
IS = 3A, dI/dt = 100A/μs
IS = 3A, dI/dt = 100A/μs
Qrr
2 of 9
www.diodes.com
November 2014
© Diodes Incorporated
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
DMC4015SSD
30
25
20
15
10
30
25
20
15
V
= 10V
GS
V
= 4.5V
GS
V
= 5.0V
DS
V
= 4.0V
GS
V
= 3.5V
GS
V
= 3.0V
GS
T
= 150°C
A
T
= 125°C
A
10
T
= 85°C
A
5
0
T
= 25°C
A
5
0
V
= 2.5V
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
1
1.5
2
2.5
3
3.5
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.02
0.018
0.016
0.014
0.012
0.01
0.05
0.04
0.03
I
= 3.0A
D
V
= 4.5V
GS
V
= 10V
GS
0.008
0.006
0.004
0.002
0
0.02
0.01
0
5
10
15
20
25
30
0
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
0.02
0.015
0.01
2
V
= 10V
GS
1.8
1.6
1.4
1.2
V
I
= 10V
GS
= 3A
D
T
= 150°C
= 125°C
A
T
A
V
= 4.5V
GS
= 3A
T
= 85°C
I
A
D
1
T
= 25°C
A
0.8
0.6
0.4
T
= -55°C
A
0.005
0
0.2
0
0
5
10
15
20
25
30
-50 -25
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
T , JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
J
3 of 9
www.diodes.com
November 2014
© Diodes Incorporated
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
DMC4015SSD
0.05
0.045
0.04
2.3
2
V
I
= 4.5V
GS
I
= 1mA
= 3A
D
D
0.035
0.03
I
= 250µA
D
1.7
1.4
V
I
= 10V
GS
= 3A
0.025
0.02
D
0.015
0.01
0.005
0
1.1
0.8
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
30
25
20
f = 1MHz
C
iss
1000
T
=150°C
A
15
10
T = 125°C
A
C
oss
T
= 85°C
100
10
A
C
rss
T
= 25°C
A
5
T
= -55°C
A
0
0
0
5
10
15
20
25
30
35
40
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
8
V
I
= 20V
DS
= 3.0A
D
6
4
2
0
0
5
10
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
15
20
25
30
35
40
4 of 9
www.diodes.com
November 2014
© Diodes Incorporated
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
DMC4015SSD
Electrical Characteristics P-Channel Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-40
V
BVDSS
IDSS
-1
VGS = 0V, ID = -250µA
µA
nA
VDS = -40V, VGS = 0V
VGS = ±20V, VDS = 0V
IGSS
100
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1
-3
29
V
mΩ
V
VGS(th)
RDS(ON)
VSD
VDS = VGS, ID = -250µA
VGS = -10V, ID = -3A
VGS = -4.5V, ID = -3A
VGS = 0V, IS = -1A
Static Drain-Source On-Resistance
45
-0.7
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
-1.2
1626
135
107
11
Ciss
Coss
Crss
RG
VDS = -20V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
17
Qg
34
Qg
nC
VDS = -20V, ID = -3A
3.7
6.0
3.9
2.8
83
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDD = -20V, RL = 1.6Ω
nS
Turn-Off Delay Time
VGS = -10V, RG = 3Ω, ID = -3A
tD(off)
tf
Turn-Off Fall Time
30
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
17.3
7.2
nS
nC
IS = -3A, dI/dt = 100A/μs
IS = -3A, dI/dt = 100A/μs
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
5 of 9
www.diodes.com
November 2014
© Diodes Incorporated
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
DMC4015SSD
30
25
20
15
10
V
= -3.5V
GS
30
25
20
15
10
V
= -5.0V
DS
V
= -3.0V
GS
V
= -4.0V
GS
V
= -4.5V
GS
V
= -5.0V
GS
V
= -10V
GS
V
= -2.5V
GS
T
= 150°C
A
T
A
= 125°C
T
= 85°C
A
5
0
5
0
T
= 25°C
A
V
= -2.0V
GS
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 13 Typical Transfer Characteristics
0.04
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.035
0.03
I
= -3.0A
D
V
= -4.5V
GS
0.025
0.02
V
= -10V
GS
0.015
0.01
0
5
10
15
20
25
30
0
2
4
6
8
10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 15 Typical Transfer Characteristic
ID, DRAIN-SOURCE CURRENT
Figure 14 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.050
0.040
0.030
0.020
2
1.8
1.6
1.4
1.2
1
V
= -4.5V
GS
V
I
= -10V
T
= 150°C
GS
= -3A
A
T
= 125°C
D
A
T
= 85°C
A
A
V
I
= -4.5V
GS
= -3A
D
T
= 25°C
0.8
0.6
0.4
T
= -55°C
A
0.010
0.000
0.2
0
0
5
10
15
20
25
30
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Figure 17 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
Figure 16 Typical On-Resistance vs.
Drain Current and Temperature
6 of 9
www.diodes.com
November 2014
© Diodes Incorporated
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
DMC4015SSD
1.8
1.6
0.05
0.045
0.04
V
I
= -4.5V
GS
= -3A
D
I
= -1mA
D
0.035
0.03
1.4
1.2
1
I
= -250µA
D
V
I
= -10V
GS
= -3A
0.025
0.02
D
0.015
0.01
0.8
0.005
0
0.6
-50 -25
0
25
50
75 100 125 150
-50 -25
TJ, JUNCTION TEMPERATURE (C)
Figure 18 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 19 Gate Threshold Variation vs. Ambient Temperature
10000
30
25
20
f = 1MHz
C
iss
1000
T
=150°C
A
T
= 125°C
15
10
A
C
oss
T
= 85°C
A
100
C
rss
T
= 25°C
A
5
0
T
= -55°C
A
10
0
5
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 21 Typical Junction Capacitance
15
20
25
30
35
40
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 20 Diode Forward Voltage vs. Current
10
8
V
I
= -20V
DS
= -3A
D
6
4
2
0
0
5
10
Qg, TOTAL GATE CHARGE (nC)
Figure 22 Gate-Charge Characteristics
15
20
25
30
35
7 of 9
www.diodes.com
November 2014
© Diodes Incorporated
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
DMC4015SSD
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
SO-8
Min
-
0.10
1.30
0.15
0.3
4.85
5.90
3.85
Dim
A
A1
A2
A3
b
D
E
E1
e
h
Max
1.75
0.20
1.50
0.25
0.5
4.95
6.10
3.95
E1
E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
7°~9°
h
°
45
1.27 Typ
-
0.62
0°
Detail ‘A’
0.35
0.82
8°
A2
A3
A
L
b
e
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
8 of 9
www.diodes.com
November 2014
© Diodes Incorporated
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
DMC4015SSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
9 of 9
www.diodes.com
November 2014
© Diodes Incorporated
DMC4015SSD
Document number: DS37348 Rev. 3 - 2
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00301/img/page/DMC4028SSD-1_1820462_files/DMC4028SSD-1_1820462_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00301/img/page/DMC4028SSD-1_1820462_files/DMC4028SSD-1_1820462_2.jpg)
DMC4028SSD-13
Power Field-Effect Transistor, 5.4A I(D), 40V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
DIODES
![](http://pdffile.icpdf.com/pdf2/p00287/img/page/DMC4040SSDQ-_1743396_files/DMC4040SSDQ-_1743396_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00287/img/page/DMC4040SSDQ-_1743396_files/DMC4040SSDQ-_1743396_2.jpg)
DMC4040SSDQ-13
Small Signal Field-Effect Transistor, 5.7A I(D), 40V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
DIODES
©2020 ICPDF网 联系我们和版权申明