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BSS138W-7 [DIODES]

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
BSS138W-7
型号： BSS138W-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总5页 (文件大小：92K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BSS138W  
N-CHANNEL ENHANCEMENT  
MODE FIELD EFFECT TRANSISTOR  
Features  
·
·
·
·
Low On-Resistance  
A
D
SOT-323  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
C
B
B
G
S
Mechanical Data  
C
G
H
·
Case: SOT-323, Molded Plastic  
D
0.65 Nominal  
·
·
·
Case Material - UL Flammability Rating 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking Code (See Page 2): K38  
Ordering & Date Code Information: See Page 2  
Weight: 0.006 grams (approx.)  
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
K
J
M
G
H
L
D
E
J
Drain  
·
·
·
·
K
0.90  
0.25  
0.10  
0°  
L
M
Gate  
a
All Dimensions in mm  
Source  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
VDSS  
VDGR  
VGSS  
ID  
BSS138W  
Units  
V
50  
50  
Drain-Source Voltage  
V
Drain-Gate Voltage (Note 1)  
Gate-Source Voltage  
Continuous  
Continuous  
±20  
V
mA  
mW  
°C/W  
°C  
Drain Current (Note 2)  
200  
Pd  
Total Power Dissipation (Note 2)  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
200  
RqJA  
625  
Tj, TSTG  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 3)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
BVDSS  
IDSS  
VGS = 0V, ID = 250mA  
DS = 50V, VGS = 0V  
50  
¾
¾
75  
¾
¾
¾
0.5  
V
V
µA  
nA  
IGSS  
VGS = ±20V, VDS = 0V  
±100  
ON CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
VGS(th)  
RDS (ON)  
gFS  
VDS = VGS, ID = -250mA  
0.5  
¾
1.2  
1.4  
¾
1.5  
3.5  
¾
V
W
VGS = 10V, ID = 0.22A  
Static Drain-Source On-Resistance  
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VDS =25V, ID = 0.2A, f = 1.0KHz  
100  
mS  
Ciss  
Coss  
Crss  
¾
¾
¾
¾
¾
¾
50  
25  
pF  
pF  
pF  
V
DS = 10V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
8.0  
tD(ON)  
¾
¾
¾
¾
20  
20  
ns  
ns  
VDD = 30V, ID = 0.2A,  
RGEN = 50W  
tD(OFF)  
Turn-Off Delay Time  
Note: 1. RGS £ 20KW.  
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Short duration test pulse used to minimize self-heating effect.  
DS30206 Rev. 3 - 2  
1 of 5  
BSS138W  
www.diodes.com  
(Note 4)  
Ordering Information  
Device  
Packaging  
Shipping  
BSS138W-7  
SOT-323  
3000/Tape & Reel  
Notes:  
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K38 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: N = 2002  
M = Month ex: 9 = September  
K38  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
J
K
L
M
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
0.6  
VGS = 3.5V  
Tj = 25°C  
0.5  
0.4  
VGS = 3.25V  
VGS = 3.0V  
0.3  
VGS = 2.75V  
0.2  
VGS = 2.5V  
0.1  
0
10  
0
2
9
8
5
6
7
1
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Drain-Source Current vs. Drain-Source Voltage  
0.8  
0.7  
0.6  
0.5  
VDS = 1V  
-55°C  
25°C  
150°C  
0.4  
0.3  
0.2  
0.1  
0
0
1.5  
3.5  
4
4.5  
0.5  
1
2
2.5  
3
VGS, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Transfer Characteristics  
2 of 5  
DS30206 Rev. 3 - 2  
BSS138W  
www.diodes.com  
2.45  
2.25  
2.05  
VGS = 10V  
ID = 0.5A  
1.85  
1.65  
1.45  
1.25  
1.05  
0.85  
VGS = 4.5V  
ID = 0.075A  
0.65  
-55  
95  
Tj, JUNCTION TEMPERATURE (°C)  
145  
-5  
45  
Fig. 3 Drain-Source On Resistance vs. Junction Temperature  
2
1.8  
1.6  
ID = 1.0mA  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
-40  
110 125  
140  
-25  
5
20 35 50 65 80 95  
-55  
-10  
Tj, JUNCTION TEMPERATURE (°C)  
Fig. 4 Gate Threshold Voltage vs. Junction Temperature  
8
150°C  
VGS = 2.5V  
7
6
5
25°C  
4
3
2
1
-55°C  
0
0.1  
0.08  
0.12  
0.14  
0.16  
0
0.02  
0.04  
0.06  
ID, DRAIN CURRENT (A)  
Fig. 5 Drain-Source On Resistance vs. Drain Current  
DS30206 Rev. 3 - 2  
3 of 5  
BSS138W  
www.diodes.com  
9
8
VGS = 2.75V  
7
150°C  
6
5
4
3
2
1
25°C  
-55°C  
0
0
0.05  
0.1  
0.15  
0.25  
0.2  
ID, DRAIN CURRENT (A)  
Fig. 6 Drain-Source On Resistance vs. Drain Current  
6
5
VGS = 4.5V  
150°C  
4
3
2
1
0
25°C  
-55°C  
0.1  
0.45  
0.5  
0.25 0.3 0.35  
0.05  
0.15 0.2  
0.4  
0
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 7 Drain-Source On Resistance vs. Drain Current  
3.5  
3
VGS = 10V  
150°C  
2.5  
2
1.5  
1
25°C  
-55°C  
0.5  
0
0.1  
0.45  
0.5  
0.25 0.3 0.35  
ID, DRAIN CURRENT (A)  
0.05  
0.15 0.2  
0.4  
0
Fig. 8 Drain-Source On Resistance vs. Drain Current  
DS30206 Rev. 3 - 2  
4 of 5  
BSS138W  
www.diodes.com  
1
0.1  
150°C  
-55°C  
0.01  
25°C  
0.001  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
VSD, DIODE FORWARD VOLTAGE (V)  
Fig. 9 Body Diode Current vs. Body Diode Voltage  
100  
VGS = 0V  
f = 1MHz  
CiSS  
10  
COSS  
CrSS  
1
0
5
10  
15  
20  
25  
30  
VDS, DRAIN SOURCE VOLTAGE (V)  
Fig. 10 Capacitance vs. Drain Source Voltage  
DS30206 Rev. 3 - 2  
5 of 5  
BSS138W  
www.diodes.com  

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