BSS138WH6327XTSA1 [INFINEON]
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| 型号： | BSS138WH6327XTSA1 |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 |
| 文件： | 总9页 (文件大小：350K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS138W
SIPMOS® Small-Signal-Transistor
Features
Product Summary
V DS
60
V
Ω
A
• N-channel
R DS(on),max
I D
3.5
0.28
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
PG-SOT-323
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
Type
Package
Tape and Reel
Marking
SWs
BSS138W
BSS138W
PG-SOT-323
PG-SOT-323
H
6327: 3000
/
H
SWs
6433: 10000
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
T A=25 °C
Continuous drain current
0.28
0.22
1.12
A
I D,pulse
dv /dt
V GS
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
I D=0.28 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
V
±20
ESD class
0 (<250V)
(JESD22-A114-HBM)
P tot
T A=25 °C
Power dissipation
0.50
W
T j, T stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 ... 150
55/150/56
°C
Rev. 2.43
page 1
2011-07-12
BSS138W
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJA
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS V GS= 0 V, I D=250 µA
Drain-source breakdown voltage
Gate threshold voltage
60
0.6
-
-
1.0
-
-
V
V GS(th)
V GS=V DS, I D=26 µA
1.4
0.1
V DS=60 V,
I D (off)
Drain-source leakage current
µA
V GS=0 V, T j=25 °C
V DS=60 V,
-
-
5
V GS=0 V, T j=150 °C
I GSS
V GS=20 V, V DS=0 V
Gate-source leakage current
-
-
1
3
10
nA
R DS(on) V GS=4.5 V, I D=0.03 A
Drain-source on-state resistance
4.0
Ω
V GS=4.5 V, I D=0.16 A
V GS=10 V, I D=0.2 A
-
-
3.2
2.1
6
3.5
-
|V DS|>2|I D|R DS(on)max
I D=0.22 A
,
g fs
Transconductance
0.12
0.23
S
Rev. 2.43
page 2
2011-07-12
BSS138W
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
32
7.2
2.8
2.2
3.0
6.7
8.2
43
pF
ns
V
GS=0 V, V DS=25 V,
C oss
Crss
t d(on)
t r
10
4.2
3.3
4.5
10
f =1 MHz
V DD=30 V, V GS=10 V,
I D=0.2 A, R G=6 Ω
t d(off)
t f
Turn-off delay time
Fall time
12
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.10
0.3
1.0
3.2
0.13 nC
0.4
Q gd
V DD=48 V, I D=0.2 A,
V GS=0 to 10 V
Q g
1.5
V plateau
Gate plateau voltage
-
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.28
1.12
T A=25 °C
I S,pulse
V GS=0 V, I F=0.28 A,
T j=25 °C
V SD
Diode forward voltage
-
0.85
1.2
V
t rr
Reverse recovery time
-
-
8.3
3.3
12.4 ns
nC
V R=30 V, I F=0.28 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
5
Rev. 2.43
page 3
2011-07-12
BSS138W
1 Power dissipation
2 Drain current
P
tot=f(T A)
I D=f(T A); V GS≥10 V
0.3
0.25
0.2
0.5
0.4
0.3
0.2
0.1
0.15
0.1
0.05
0
0
0
40
80
120
160
0
40
80
120
160
T A [°C]
T A [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
103
101
limited by on-state
resistance
0.5
102
10 µs
100
10-1
10-2
0.2
0.1
100 µs
0.05
101
1 ms
0.02
10 ms
0.01
100 ms
DC
100
single pulse
10-1
10-2
10-3
1
10-6 10-5 10-4 10-3 10-2 10-1 100 101 102
10
100
t p [s]
V DS [V]
Rev. 2.43
page 4
2011-07-12
BSS138W
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.6
10
2.9 V
3.5 V
3.2 V
4 V
V 10
V 7
V 5
V 4.5
0.5
0.4
0.3
0.2
0.1
0
8
6
4
2
0
V 4
V 3.5
4.5 V
5 V
V 3.2
V 2.9
7 V
10 V
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
V DS [V]
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.6
0.5
0.4
0.3
0.2
0.1
0
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
1
2
3
4
5
0.00
0.10
0.20
ID [A]
0.30
0.40
V GS [V]
Rev. 2.43
page 5
2011-07-12
BSS138W
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=26 µA
parameter: I D
R
DS(on)=f(T j); I D=0.2 A; V GS=10 V
8
2
1.6
1.2
0.8
0.4
0
6
%98
typ
%98
4
typ
%2
2
0
-60
-20
20
60
100
140
-60
-20
20
60
T j [°C]
100
140
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I F=f(V SD
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
)
parameter: T j
102
100
150 °C, 98%
25 °C
25 °C, 98%
150 °C
Ciss
10-1
101
Coss
Crss
10-2
100
10-3
0
0
10
20
30
0.4
0.8
1.2
1.6
2
V SD [V]
V DS [V]
Rev. 2.43
page 6
2011-07-12
BSS138W
13 Typ. gate charge
GS=f(Q gate); I D=0.2 A pulsed
14 Drain-source breakdown voltage
V
V BR(DSS)=f(T j); I D=250 µA
parameter: V DD
70
65
60
55
50
12
30 V
10
8
48 V
12 V
6
4
2
0
0
-60
-20
20
60
100
140
180
0.2
0.4
0.6
0.8
1
Q gate [nC]
T j [°C]
Rev. 2.43
page 7
2011-07-12
BSS138W
Package Outline:
Footprint:
Packaging:
Rev. 2.43
page 8
2011-07-12
BSS138W
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.43
page 9
2011-07-12
相关型号：
BSS138WH6433XTMA1
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
INFINEON
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