BSS138_08 [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | BSS138_08 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总4页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
•
•
•
•
•
•
Low On-Resistance
•
•
Case: SOT-23
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 3 and 4)
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
•
•
•
•
•
•
•
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
•
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
D
Gate
S
G
TOP VIEW
Source
TOP VIEW
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
VDGR
VGSS
ID
Value
50
50
Units
V
V
Drain-Gate Voltage RGS ≤ 20KΩ
Gate-Source Voltage
Continuous
Continuous
V
±20
200
Drain Current
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 1)
Symbol
Pd
Rθ
Value
300
Units
mW
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
417
°C/W
°C
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol Min
Typ Max Unit
Test Condition
VGS = 0V, ID = 250μA
VDS = 50V, VGS = 0V
VGS = ±20V, VDS = 0V
50
⎯
⎯
75
⎯
⎯
V
µA
nA
BVDSS
IDSS
IGSS
⎯
0.5
±100
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
0.5
⎯
100
1.2
1.4
⎯
1.5
3.5
⎯
V
Ω
mS
VGS(th)
RDS (ON)
gFS
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.22A
VDS = 25V, ID = 0.2A, f = 1.0KHz
50
25
8.0
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance
pF VDS = 10V, VGS = 0V, f = 1.0MHz
pF
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
20
20
ns
ns
tD(ON)
tD(OFF)
⎯
⎯
⎯
⎯
VDD = 30V, ID = 0.2A, RGEN = 50Ω
Turn-Off Delay Time
Notes:
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
3. No purposefully added lead. Halogen and Antimony Free.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
1 of 4
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May 2008
© Diodes Incorporated
BSS138
Document number: DS30144 Rev. 13 - 2
BSS138
0.6
0.5
0.8
0.7
VGS = 3.5V
Tj = 25°C
-55°C
VDS = 1V
VGS = 3.25V
25°C
0.6
0.5
0.4
VGS = 3.0V
150°C
0.3
0.2
0.4
VGS = 2.75V
0.3
0.2
VGS = 2.5V
0.1
0
0.1
0
2
1
3
4
5
6
7
8
9
0
0.5
4.5
0
10
1
1.5
2
2.5
3.5
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
2
2.45
1.8
2.25
1.6
1.4
1.2
1
2.05
1.85
1.65
ID = 1.0mA
VGS = 10V
ID = 0.5A
1.45
1.25
1.05
0.85
0.65
0.8
VGS = 4.5V
0.6
0.4
0.2
0
ID = 0.075A
-25
Tj, JUNCTION TEMPERATURE (°C)
155
-55
5
35
65
95
125
-55
-5
45
145
95
Tj, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
Fig. 3 Drain-Source On-Resistance vs. Junction Temperature
8
9
8
150°C
VGS = 2.5V
7
V
= 2.75V
GS
7
6
5
6
5
150°C
25°C
4
4
3
2
3
2
25°C
-55°C
-55°C
1
0
1
0
0.06
0.1
ID, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
0
0.04
0.08
0.12 0.14 0.16
0.05
0.1
ID, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
0.15
0.02
0
0.25
0.2
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May 2008
© Diodes Incorporated
BSS138
Document number: DS30144 Rev. 13 - 2
BSS138
3.5
3
6
5
V
= 10V
GS
VGS = 4.5V
150°C
150°C
2.5
2
4
3
2
1.5
25°
C
25°C
1
0.5
0
-55°C
1
0
-55°C
0.1
0.3
0.5
0.2
0.4
0.1
0
0.3
ID, DRAIN-CURRENT (A)
Fig. 8 Drain-Source On Resistance vs. Drain-Current
0.5
0.2
0.4
0
ID, DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
1
100
10
1
V
= 0V
GS
f = 1MHz
C
0.1
iSS
150°C
-55°C
C
OSS
0.01
25°C
C
rSS
0.001
0
5
10
15
20
25
30
0
0.2
VSD, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
0.4
0.6
0.8
1
1.2
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
Ordering Information (Note 5)
Part Number
Case
Packaging
BSS138-7-F
SOT-23
3000/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K38
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004 2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
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May 2008
© Diodes Incorporated
BSS138
Document number: DS30144 Rev. 13 - 2
BSS138
Package Outline Dimensions
A
SOT-23
Min
Dim
A
B
C
D
F
G
H
J
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
C
B
TOP VIEW
G
H
K
L
M
K
J
M
α
L
F
D
All Dimensions in mm
Suggested Pad Layout
Dimensions Value (in mm)
Y
Z
G
X
Y
C
E
3.4
0.7
0.9
1.4
2.0
0.9
Z
G
C
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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May 2008
© Diodes Incorporated
BSS138
Document number: DS30144 Rev. 13 - 2
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