BSS138_1 [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | BSS138_1 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总5页 (文件大小：478K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: BSS138
BSS138
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
·
·
·
·
·
·
·
Low On-Resistance
A
Low Gate Threshold Voltage
D
SOT-23
Low Input Capacitance
Fast Switching Speed
B
Dim
A
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.013
0.903
0.45
0.085
0°
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
0.180
8°
C
Low Input/Output Leakage
TOP VIEW
G
S
Lead Free/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
D
B
E
G
C
H
Mechanical Data
D
K
M
·
Case: SOT-23
E
J
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
L
G
H
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
Drain
J
Terminals: Solderable per MIL-STD-202, Method 208
K
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
L
·
·
·
·
Terminal Connections: See Diagram
Marking (See Page 2): K38
M
Gate
a
Ordering & Date Code Information: See Page 2
Weight: 0.008 grams (approximate)
Source
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Symbol
Maximum Ratings
Characteristic
BSS138
50
Units
V
VDSS
VDGR
VGSS
ID
Drain-Source Voltage
Drain-Gate Voltage RGS £ 20KW
Gate-Source Voltage
Drain Current
50
V
Continuous
Continuous
±20
V
mA
mW
°C/W
°C
200
Pd
Power Dissipation (Note 1)
300
R
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
417
qJA
Tj, TSTG
-55 to +150
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BVDSS
IDSS
VGS = 0V, ID = 250mA
50
¾
¾
75
¾
¾
¾
V
VDS = 50V, VGS = 0V
µA
0.5
IGSS
VGS = ±20V, VDS = 0V
±100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
RDS (ON)
gFS
VDS = VGS, ID = 250mA
0.5
¾
1.2
1.4
¾
1.5
3.5
¾
V
W
VGS = 10V, ID = 0.22A
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
VDS = 25V, ID = 0.2A, f = 1.0KHz
100
mS
Ciss
Coss
Crss
¾
¾
¾
¾
¾
¾
50
25
pF
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
8.0
tD(ON)
¾
¾
¾
¾
20
20
ns
ns
VDD = 30V, ID = 0.2A,
RGEN = 50W
tD(OFF)
Turn-Off Delay Time
Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration test pulse used to minimize self-heating effect.
3. No purposefully added lead.
DS30144 Rev. 11 - 2
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BSS138
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ã Diodes Incorporated
(Note 4)
Ordering Information
Device
Packaging
Shipping
BSS138-7-F
SOT-23
3000/Tape & Reel
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K38
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
0.6
V
= 3.5V
GS
T = 25°C
j
0.5
V
GS
= 3.25V
0.4
V
GS
= 3.0V
0.3
V
GS
= 2.75V
0.2
V
GS
= 2.5V
0.1
0
2
9
5
6
7
10
1
3
4
8
0
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0.8
0.7
0.6
0.5
V
DS
= 1V
-55°C
25°C
150°C
0.4
0.3
0.2
0.1
0
0
1.5
3.5
4
4.5
0.5
1
2
2.5
3
V
, GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Transfer Characteristics
DS30144 Rev. 11 - 2
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BSS138
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2.45
2.25
2.05
VGS = 10V
ID = 0.5A
1.85
1.65
1.45
1.25
1.05
0.85
VGS = 4.5V
ID = 0.075A
0.65
-55
95
T, JUNCTION TEMPERATURE (°C)
145
-5
45
j
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
2
1.8
1.6
I
D
= 1.0mA
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-55
-40 -25 -10
5
20 35 50 65 80 95 110 125 140
T, JUNCTION TEMPERATURE (°C)
j
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
8
150°C
V
= 2.5V
7
6
5
GS
25°C
4
3
2
1
-55°C
0
0.1
0.08
0.12
0.14
0.16
0
0.02
0.04
0.06
I , DRAIN CURRENT (A)
D
Fig. 5 Drain-Source On Resistance vs. Drain Current
DS30144 Rev. 11 - 2
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BSS138
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9
8
V
GS
= 2.75V
7
150°C
6
5
4
3
2
1
25°C
-55°C
0
0
0.05
0.1
0.15
0.25
0.2
I , DRAIN CURRENT (A)
D
Fig. 6 Drain-Source On Resistance vs. Drain Current
6
V
GS
= 4.5V
5
150°C
4
3
2
1
0
25°C
-55°C
0.1
0.45
0.5
0.25 0.3 0.35
, DRAIN-SOURCE VOLTAGE (V)
0.05
0.15 0.2
0.4
0
V
DS
Fig. 7 Drain-Source On Resistance vs. Drain Current
3.5
V
GS
= 10V
3
150°C
2.5
2
1.5
25°C
1
-55°C
0.5
0
0.1
0.45
0.5
0.25 0.3 0.35
I , DRAIN CURRENT (A)
0.05
0.15 0.2
0.4
0
D
Fig. 8 Drain-Source On Resistance vs. Drain Current
DS30144 Rev. 11 - 2
4 of 5
BSS138
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1
0.1
150°C
-55°C
0.01
25°C
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V
, DIODE FORWARD VOLTAGE (V)
SD
Fig. 9 Body Diode Current vs. Body Diode Voltage
100
10
1
V
GS
= 0V
f = 1MHz
C
iSS
C
OSS
C
rSS
0
5
10
15
20
25
30
V
, DRAIN SOURCE VOLTAGE (V)
DS
Fig. 10 Capacitance vs. Drain Source Voltage
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
DS30144 Rev. 11 - 2
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BSS138
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