BSS138_14 [PANJIT]
50V N-Channel Enhancement Mode MOSFET - ESD Protected;
| 型号： | BSS138_14 |
| 厂家： | 
PAN JIT INTERNATIONAL INC. |
| 描述： | 50V N-Channel Enhancement Mode MOSFET - ESD Protected |
| 文件： | 总5页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS138
50V N-Channel Enhancement Mode MOSFET - ESD Protected
Unit：inch(mm)
SOT-23
FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• RDS(ON), VGS@2.5V,IDS@100mA=6Ω
0.120(3.04)
0.110(2.80)
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected
0.056(1.40)
0.047(1.20)
0.008(0.20)
0.003(0.08)
0.079(2.00)
0.070(1.80)
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
0.044(1.10)
0.035(0.90)
0.004(0.10)MAX.
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 138
0.020(0.50)
0.013(0.35)
• Apporx. Weight: 0.0003 ounces, 0.0084 grams
Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Drain-Source Voltage
Symbol
VDS
Limit
50
Units
V
Gate-Source Voltage
VGS
ID
+20
300
V
Continuous Drain Current
mA
mA
1)
Pulsed Drain Current
IDM
2000
TA=25OC
TA=75OC
350
210
Maximum Power Dissipation
PD
mW
Operating Junction and Storage Temperature
Range
TJ,TSTG
RθJA
-55 to + 150
357
OC
Junction-to Ambient Thermal Resistance(PCB mounted)2
OC/W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
October 26,2010-REV.00
PAGE . 1
BSS138
ELECTRICALCHARACTERISTICS
Parameter
Static
Symbol
Test Condition
Min.
Typ.
Max.
Units
Drain-Source Breakdown
Voltage
BVDSS
VGS(th)
RDS(on)
RDS(on)
VGS=0V , ID=10μA
VDS=VGS , ID=250μA
VGS=2.5V , I D=100mA
VGS=4.5V , I D=200mA
50
0.8
-
-
-
V
V
Gate Threshold Voltage
-
1.5
6.0
4.0
Drain-Source On-State
Resistance
2.8
1.8
Drain-Source On-State
Resistance
-
Ω
Drain-Source On-State
Resistance
RDS(on)
IDSS
VGS=10V , I D=500mA
VDS=50V , VGS=0V
-
1.6
3.0
1
Zero Gate Voltage Drain
Current
-
-
-
-
-
μA
μA
mS
Gate Body Leakage
Forward Transconductance
Dynamic
IGSS
VGS=+20V , VDS=0V
VDS=10V , ID=250mA
+10
-
gfS
100
VDS=25V, ID=250mA
VGS=4.5V
Total Gate Charge
Qg
-
-
1.0
nC
ns
Turn-On Time
ton
toff
-
-
-
-
-
-
-
-
-
-
40
150
50
10
VDD=30V , RL=100Ω
ID=300mA , VGEN=10V
RG=6Ω
Turn-Off Time
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
VDS=25V , VGS=0V
f=1.0MHZ
pF
Reverse Transfer
Capacitance
5
Source-Drain Diode
Diode Forward Voltage
VSD
IS
IS=250mA , VGS=0V
-
-
-
0.82
1.2
300
V
Continuous Diode Forward
Current
-
-
-
-
mA
mA
Pulse Diode Forward
Current
ISM
2000
V
DD
V
DD
Switching
Gate Charge
Test Circuit
Test Circuit
RL
RL
V
IN
VGS
V
OUT
1mA
RG
RG
October 26,2010-REV.00
PAGE . 2
BSS138
Typical CChhaarraacctteerriissttiiccss CCuurrvveess ((TTA==2255OCC,,uunnlleessss ootthheerrwwiissee nnootteedd))
1
0.8
0.6
0.4
0.2
0
1.2
VGS=10V~4.0V
VDS =10V
1.0
0.8
3.0V
0.6
TJ = 25oC
0.4
0.2
0
0
1
2
3
4
5
6
0
1
2
3
4
5
VDS- Drain-to-Source Voltage (V)
VGS- Gate-to-Source Voltage (V)
FIG.1-OOuuttppuuttCChhaarraacctteerriissttiicc
FIG.2- Transfer Characteristic
5
4
3
5
4
3
2
1
0
ID =200mA
VGS=4.5V
2
ID =500mA
VGS=10V
1
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
FIG.4- On Resistance vs Gate to Source Voltage
FIG.3- On Resistance vs Drain Current
1.8
VGS =10 V
1.6
1.4
1.2
1
ID =500mA
0.8
0.6
-50 -25
0
25 50 75 100 125 150
TJ - Junction Temperature (OC)
FIG.5- On Resistance vs Junction Temperature
October 26,2010-REV.00
PAGE . 3
BSS138
1
10
VGS= 0V
I
D =250mA
8
6
4
2
0
TJ = 125OC
TJ =25OC
0.1
TJ =-55OC
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD - Source-to-Drain Voltage (V)
Qg - Gate Charge (nC)
Fiigg..77 SSoouurrccee--DDrraaiinn DDiiooddee FFoorrwwaarrdd VVoollttaaggee
Fig.6 - Gate Charge Waveform
1.2
1.2
ID = 250mA
ID = 250mA
1.1
1.0
1.15
1.1
1.05
1
0.9
0.8
0.7
0.95
0.9
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
TJ - Junction Temperature (OC)
TJ - Junction Temperature (OC)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
October 26,2010-REV.00
PAGE . 4
BSS138
MOUNTING PAD LAYOUT
Unit：inch(mm)
SOT-23
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGALSTATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its produ cts for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
October 26,2010-REV.00
PAGE . 5
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