BSS138ZN3-0-T1-G [CYSTEKEC]
50V N-Channel Enhancement Mode MOSFET;
| 型号： | BSS138ZN3-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | 50V N-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：481K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C834N3
Issued Date : 2017.11.29
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
50V N-Channel Enhancement Mode MOSFET
BVDSS
ID
50V
380mA
BSS138ZN3
RDSON@VGS=10V, ID=220mA
RDSON@VGS=4.5V, ID=220mA
RDSON@VGS=2.5V,ID=220mA
RDSON@VGS=4V,ID=100mA
RDSON@VGS=2.5V,ID=80mA
1.1Ω(typ)
1.3Ω(typ)
1.7Ω(typ)
1.3Ω(typ)
1.6Ω(typ)
Features
• Simple drive requirement
• Small package outline
• Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-23
D
BSS138ZN3
S
G：Gate S：Source D：Drain
G
Ordering Information
Device
Package
SOT-23
Shipping
BSS138ZN3-0-T1-G
3000 pcs / tape & reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
BSS138ZN3
CYStek Product Specification
Spec. No. : C834N3
Issued Date : 2017.11.29
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDS
Limits
50
±20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
380
270
1.5
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Notes 1, 2)
ID
mA
A
IDM
TA=25℃
350
Maximum Power Dissipation
(Note 3)
PD
mW
TA=70℃
224
VESD
ESD susceptibility
Operating Junction and Storage Temperature
1500 (Note 4)
-55~+150
V
Tj, Tstg
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on FR-4 board.
4. Human body model, 1.5kΩ in series with 100pF
Thermal Performance
Parameter
Symbol
Rth,ja
Limit
357
Unit
Thermal Resistance, Junction-to-Ambient(PCB mounted)
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
IGSS
50
0.8
-
-
-
-
-
1.1
1.3
1.7
-
1.5
10
1
10
1.3
1.7
5
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
V
±
±
-
-
-
-
-
-
VGS= 20V, VDS=0V
μA
VDS=50V, VGS=0V
IDSS
VDS=40V, VGS=0V (Tj=70°C)
VGS=10V, ID=220mA
VGS=4.5V, ID=220mA
VGS=2.5V, ID=220mA
*RDS(ON)
Ω
-
-
1.3
1.6
0.6
3
5
-
VGS=4V, ID=100mA
VGS=2.5V, ID=80mA
VDS=10V, ID=220mA
*GFS
Dynamic
0.4
S
Ciss
Coss
Crss
-
-
-
43
7.2
4
-
-
-
pF
VDS=10V, VGS=0V, f=1MHz
BSS138ZN3
CYStek Product Specification
Spec. No. : C834N3
Issued Date : 2017.11.29
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
-
-
-
-
-
-
-
4
7
15
-
-
-
-
-
-
-
VDS=30V, ID=100mA, VGS=4.5V
ns
Ω
RG=10
15
0.76
0.085
0.26
nC
V
VDS=30V, ID=250mA, VGS=4.5V
Source-Drain Diode
*VSD
-
0.79
1.2
VGS=0V, IS=200mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
BSS138ZN3
CYStek Product Specification
Spec. No. : C834N3
Issued Date : 2017.11.29
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
1.4
1.2
1
VGS=10V
VGS=5V
μ
ID=250 A,
V
GS=0V
VGS=4.5V
VGS=4V
VGS=3.5V
VGS=3V
VGS=2.5V
0.8
0.6
VGS=1.8V
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
5
1
Tj=25°C
VGS=0V
4.5
4
0.8
3.5
3
VGS=1.8V
VGS=4.5V
VGS=2.5V
0.6
0.4
0.2
0
Tj=150°C
2.5
2
1.5
1
VGS=10V
0.5
0
0
0.2
0.4
0.6
0.8
1
0.001
0.01
0.1
1
D
IDR, Reverse Drain Current (A)
I , Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
5
4.5
2
VGS=4.5V, ID=220mA
VGS=2.5V, ID=220mA
1.8
1.6
1.4
1.2
1
4
3.5
3
2.5
2
ID=220mA
1.5
1
ID=100mA
0.8
0.6
VGS=1.8V, ID=100mA
0.5
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
BSS138ZN3
CYStek Product Specification
Spec. No. : C834N3
Issued Date : 2017.11.29
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
1.4
1.2
1
100
μ
ID=250 A
Ciss
C
10
oss
0.8
0.6
0.4
Crss
1
-75 -50 -25
0
25 50 75 100 125 150 175
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Gate Charge Characteristics
10
8
10
8
TJ(MAX)=150°C
TA=25°C
JA
θ
R
=357°C/W
6
6
4
4
VDS=30V
ID=250mA
2
2
0
0
0
0.5
1
1.5
2
0.001
0.01
0.1 1
Pulse Width(s)
10
100
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
10
1
0.45
0.4
10ms
1ms
100μs
RDS(ON)
Limited
0.35
0.3
0.25
0.2
0.1
100m
0.15
0.1
TA=25°C, Tj=150°C,
θ
GS=4.5V, R JA=357°C/W
1s
0.01
V
DC
10
JA357
θ
TA=25°C, VGS=4.5V, R
°C/W
Single Pulse
0.05
0
0.001
0.01
0.1
1
100
25
50
75
100
Tj, Junction Temperature(°C)
125
150
175
VDS, Drain-Source Voltage(V)
BSS138ZN3
CYStek Product Specification
Spec. No. : C834N3
Issued Date : 2017.11.29
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Typical Transfer Characteristics
2
10
1
VDS=10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.1
0.01
VDS=5V
Ta=25°C
Pulsed
0
2
4
6
8
0.001
0.01
0.1
1
VGS, Gate-Source Voltage(V)
ID, Drain Current(A)
Power Derating Curve
0.4
0.35
0.3
Mounted on FR-4 board
0.25
0.2
0.15
0.1
0.05
0
0
20
40
60
80 100 120 140 160
TA, Ambient Temperature(℃)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
0.1
0.1
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
0.05
=357
4.RθJA
°C/W
0.02
0.01
0.01
Single Pulse
1.E-02
0.001
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
BSS138ZN3
CYStek Product Specification
Spec. No. : C834N3
Issued Date : 2017.11.29
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
BSS138ZN3
CYStek Product Specification
Spec. No. : C834N3
Issued Date : 2017.11.29
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
8 minutes max.
6 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
BSS138ZN3
CYStek Product Specification
Spec. No. : C834N3
Issued Date : 2017.11.29
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOT-23 Dimension
Marking:
SS
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Gate 2.Source 3.Drain
*:Typical
Inches
DIM
Millimeters
Inches
Min. Max.
Millimeters
Min. Max.
DIM
Min.
Max.
Min.
Max.
3.04
1.40
1.30
0.50
2.30
0.10
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0551
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
2.80
1.20
0.89
0.30
1.70
0.00
J
K
L
S
V
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1004
0.0098 0.0256
0.0118 0.0197
0.08
0.30
0.85
2.10
0.25
0.30
0.20
0.67
1.15
2.55
0.65
0.50
L1
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BSS138ZN3
CYStek Product Specification
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