BSS138W-7-F [DIODES]

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
BSS138W-7-F
型号: BSS138W-7-F
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N沟道增强型网络场效晶体管

晶体 小信号场效应晶体管 开关 光电二极管
文件: 总6页 (文件大小:107K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SPICE MODELS: BSS138W  
BSS138W  
Lead-free Green  
N-CHANNEL ENHANCEMENT  
MODE FIELD EFFECT TRANSISTOR  
Features  
·
·
·
·
·
·
Low On-Resistance  
A
D
SOT-323  
Low Gate Threshold Voltage  
Low Input Capacitance  
Dim  
A
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
Fast Switching Speed  
C
B
Lead Free/RoHS Compliant (Note 4)  
"Green" Device (Note 5 and 6)  
B
G
S
C
G
H
Mechanical Data  
·
·
D
0.65 Nominal  
Case: SOT-323  
E
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
K
J
Case Material: Molded Plastic, "Green" Molding  
Compound, Note 6. UL Flammability Classification Rating  
94V-0  
M
G
H
L
D
E
J
·
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Terminal Connections: See Diagram  
Drain  
K
0.90  
0.25  
0.10  
0°  
L
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
M
Gate  
a
·
·
·
Marking Code (See Page 2): K38  
All Dimensions in mm  
Ordering & Date Code Information: See Page 2  
Weight: 0.006 grams (approximate)  
Source  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
BSS138W  
Units  
V
VDSS  
VDGR  
VGSS  
ID  
50  
50  
Drain-Source Voltage  
V
Drain-Gate Voltage (Note 1)  
Gate-Source Voltage  
Continuous  
Continuous  
±20  
V
mA  
mW  
°C/W  
°C  
Drain Current (Note 2)  
200  
Pd  
Total Power Dissipation (Note 2)  
Thermal Resistance, Junction to Ambient  
Operating and Storage Temperature Range  
200  
RqJA  
Tj, TSTG  
625  
-55 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
OFF CHARACTERISTICS (Note 3)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
BVDSS  
IDSS  
VGS = 0V, ID = 250mA  
50  
¾
¾
75  
¾
¾
¾
V
VDS = 50V, VGS = 0V  
µA  
0.5  
IGSS  
VGS = ±20V, VDS = 0V  
±100  
nA  
ON CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
VGS(th)  
RDS (ON)  
gFS  
V
DS = VGS, ID = 250mA  
0.5  
¾
1.2  
1.4  
¾
1.5  
3.5  
¾
V
W
VGS = 10V, ID = 0.22A  
Static Drain-Source On-Resistance  
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
VDS =25V, ID = 0.2A, f = 1.0KHz  
100  
mS  
Ciss  
Coss  
Crss  
¾
¾
¾
¾
¾
¾
50  
25  
pF  
pF  
pF  
VDS = 10V, VGS = 0V  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
8.0  
tD(ON)  
¾
¾
¾
¾
20  
20  
ns  
ns  
VDD = 30V, ID = 0.2A,  
R
GEN = 50W  
tD(OFF)  
Turn-Off Delay Time  
Note: 1.  
R
£ 20KW.  
GS  
2. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout  
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Short duration test pulse used to minimize self-heating effect.  
4. No purposefully added lead.  
DS30206 Rev. 7 - 2  
1 of 6  
BSS138W  
www.diodes.com  
ã Diodes Incorporated  
Ordering Information (Note 5 & 7)  
Device  
Packaging  
Shipping  
BSS138W-7-F  
SOT-323  
3000/Tape & Reel  
Notes: 5. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
6. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product  
manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
7. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K38 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: N = 2002  
K38  
M = Month ex: 9 = September  
Date Code Key  
Year  
1998  
1999  
2000  
2001  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
Code  
J
K
L
M
N
P
R
S
T
U
V
W
Month  
Code  
Jan  
Feb  
March  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
0.6  
VGS = 3.5V  
Tj = 25°C  
0.5  
0.4  
VGS = 3.25V  
VGS = 3.0V  
0.3  
0.2  
VGS = 2.75V  
VGS = 2.5V  
0.1  
0
2
5
6
7
9
10  
1
3
4
8
0
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 1 Drain-Source Current vs. Drain-Source Voltage  
0.8  
VDS = 1V  
-55°C  
0.7  
0.6  
0.5  
25°C  
150°C  
0.4  
0.3  
0.2  
0.1  
0
0
1.5  
3.5  
4
4.5  
0.5  
1
2
2.5  
3
VGS, GATE-SOURCE VOLTAGE (V)  
Fig. 2 Transfer Characteristics  
2 of 6  
DS30206 Rev. 7 - 2  
BSS138W  
www.diodes.com  
2.45  
2.25  
2.05  
VGS = 10V  
ID = 0.5A  
1.85  
1.65  
1.45  
1.25  
1.05  
0.85  
VGS = 4.5V  
ID = 0.075A  
0.65  
-55  
95  
Tj, JUNCTION TEMPERATURE (°C)  
145  
-5  
45  
Fig. 3 Drain-Source On Resistance vs. Junction Temperature  
2
1.8  
1.6  
ID = 1.0mA  
1.4  
1.2  
1
0.8  
0.6  
0.4  
0.2  
0
-40  
110 125  
140  
-25  
5
20 35 50 65 80 95  
-55  
-10  
Tj, JUNCTION TEMPERATURE (°C)  
Fig. 4 Gate Threshold Voltage vs. Junction Temperature  
8
150°C  
VGS = 2.5V  
7
6
5
25°C  
4
3
2
1
-55°C  
0
0.1  
0.08  
0.12  
0.14  
0.16  
0
0.02  
0.04  
0.06  
ID, DRAIN CURRENT (A)  
Fig. 5 Drain-Source On Resistance vs. Drain Current  
DS30206 Rev. 7 - 2  
3 of 6  
BSS138W  
www.diodes.com  
9
8
VGS = 2.75V  
7
150°C  
6
5
4
3
2
1
25°C  
-55°C  
0
0
0.05  
0.1  
0.15  
0.25  
0.2  
ID, DRAIN CURRENT (A)  
Fig. 6 Drain-Source On Resistance vs. Drain Current  
6
5
VGS = 4.5V  
150°C  
4
3
2
1
0
25°C  
-55°C  
0.1  
0.45  
0.5  
0.25 0.3 0.35  
0.05  
0.15 0.2  
0.4  
0
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 7 Drain-Source On Resistance vs. Drain Current  
3.5  
3
VGS = 10V  
150°C  
2.5  
2
1.5  
1
25°C  
-55°C  
0.5  
0
0.1  
0.45  
0.5  
0.25 0.3 0.35  
ID, DRAIN CURRENT (A)  
0.05  
0.15 0.2  
0.4  
0
Fig. 8 Drain-Source On Resistance vs. Drain Current  
DS30206 Rev. 7 - 2  
4 of 6  
BSS138W  
www.diodes.com  
1
0.1  
150°C  
-55°C  
0.01  
25°C  
0.001  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
VSD, DIODE FORWARD VOLTAGE (V)  
Fig. 9 Body Diode Current vs. Body Diode Voltage  
100  
VGS = 0V  
f = 1MHz  
CiSS  
10  
COSS  
CrSS  
1
0
5
10  
15  
20  
25  
30  
VDS, DRAIN SOURCE VOLTAGE (V)  
Fig. 10 Capacitance vs. Drain Source Voltage  
DS30206 Rev. 7 - 2  
5 of 6  
BSS138W  
www.diodes.com  
IMPORTANT NOTICE  
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance-  
ments, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;  
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such  
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.  
LIFE SUPPORT  
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the  
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.  
DS30206 Rev. 7 - 2  
6 of 6  
BSS138W  
www.diodes.com  

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