MTB13N03Q8 [CYSTEKEC]
N-Channel Logic Level Enhancement Mode Power MOSFET; N沟道逻辑电平增强型功率MOSFET型号: | MTB13N03Q8 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | N-Channel Logic Level Enhancement Mode Power MOSFET |
文件: | 总8页 (文件大小:326K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C728Q8
Issued Date : 2009.07.01
Revised Date :
CYStech Electronics Corp.
Page No. : 1/8
N-Channel Logic Level Enhancement Mode Power MOSFET
BVDSS
ID
RDSON(max)
30V
11A
12.5mΩ
MTB13N03Q8
Description
The MTB13N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free and Halogen-free package
Symbol
Outline
MTB13N03Q8
SOP-8
Pin 1
G:Gate
D:Drain
S:Source
MTB13N03Q8
CYStek Product Specification
Spec. No. : C728Q8
Issued Date : 2009.07.01
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
11
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
ID
9
A
IDM
IAS
44 *1
11
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=11A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
EAS
EAR
6
mJ
3 *2
3 *3
1.5
TA=25℃
Total Power Dissipation
PD
W
TA=100℃
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
25
50 *3
Unit
°C/W
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
30
1
-
-
-
-
11
-
-
1.5
36
-
-
-
-
11
14
-
3
-
100
1
25
-
12.5
20
V
V
S
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=11A
*1
nA
±
±
IGSS
VGS= 20
VDS =24V, VGS =0
IDSS
μA
VDS =20V, VGS =0, TJ=125°C
VDS =10V, VGS =10V
VGS =10V, ID=11A
ID(ON) *1
A
Ω
m
m
RDS(ON) *1
Ω
-
VGS =4.5V, ID=9A
Dynamic
Ciss
Coss
Crss
-
-
-
1930
255
150
-
-
-
pF
VGS=0V, VDS=15V, f=1MHz
MTB13N03Q8
CYStek Product Specification
Spec. No. : C728Q8
Issued Date : 2009.07.01
Revised Date :
CYStech Electronics Corp.
Page No. : 3/8
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Qg (VGS=10V)
Qg (VGS=4.5V)
-
-
-
-
-
-
-
-
-
22
13
4.5
7.2
10
8
28
5
2
-
-
-
-
-
-
-
-
-
*1, 2
*1, 2
nC
VDS=15V, VGS=10V, ID=11A
Qgs
*1, 2
Qgd
*1, 2
td(ON) *1, 2
VDS=15V, ID=1A, VGS=10V,
tr
*1, 2
ns
td(OFF) *1, 2
RGS=2.7Ω
tf
*1, 2
VGS=15mV, VDS=0V, f=1MHz
Ω
Rg
Source-Drain Diode
-
-
-
-
-
-
IS
ISM *3
VSD *1
trr
Qrr
2.5
10
1.2
-
-
*1
A
V
ns
nC
IF=IS, VGS=0V
-
-
20
10
IF=IS, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
Package
SOP-8
Shipping
Marking
MTB13N03Q8
2500 pcs / Tape & Reel B13N03
(Pb-free & Halogen-free package)
MTB13N03Q8
CYStek Product Specification
Spec. No. : C728Q8
Issued Date : 2009.07.01
Revised Date :
CYStech Electronics Corp.
Page No. : 4/8
Characteristic Curves
MTB13N03Q8
CYStek Product Specificatio
Spec. No. : C728Q8
Issued Date : 2009.07.01
Revised Date :
CYStech Electronics Corp.
Page No. : 5/8
Characteristic Curves(Cont.)
MTB13N03Q8
CYStek Product Specification
Spec. No. : C728Q8
Issued Date : 2009.07.01
Revised Date :
CYStech Electronics Corp.
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTB13N03Q8
CYStek Product Specification
Spec. No. : C728Q8
Issued Date : 2009.07.01
Revised Date :
CYStech Electronics Corp.
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB13N03Q8
CYStek Product Specification
Spec. No. : C728Q8
Issued Date : 2009.07.01
Revised Date :
CYStech Electronics Corp.
Page No. : 8/8
SOP-8 Dimension
Right side View
Top View
A
Marking:
G
I
C
B
H
J
Device Name
Date Code
D
Front View
Part A
E
K
Part A
L
N
M
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
O
F
*: Typical
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
0.2007
Min.
Max.
5.10
4.10
6.20
Min.
Max.
Min.
Max.
0.28
0.83
0.26
0.52
0.50
0.13
0.15
A
B
C
D
E
F
0.1850
0.1457
0.2283
4.70
3.70
5.80
I
J
0.0031
0.0157
0.0074
0.0145
0.0118
0.0031
0.0000
0.0110
0.0323
0.0102
0.0204
0.0197
0.0051
0.0059
0.08
0.40
0.19
0.37
0.30
0.08
0.00
0.1614
0.2441
K
L
M
N
O
0.0500*
1.27*
0.0130
0.1472
0.0472
0.1889
0.0201
0.1527
0.0638
0.2007
0.33
3.74
1.20
4.80
0.51
3.88
1.62
5.10
G
H
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB13N03Q8
CYStek Product Specification
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