MTB13N03Q8 [CYSTEKEC]

N-Channel Logic Level Enhancement Mode Power MOSFET; N沟道逻辑电平增强型功率MOSFET
MTB13N03Q8
型号: MTB13N03Q8
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

N-Channel Logic Level Enhancement Mode Power MOSFET
N沟道逻辑电平增强型功率MOSFET

文件: 总8页 (文件大小:326K)
中文:  中文翻译
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Spec. No. : C728Q8  
Issued Date : 2009.07.01  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/8  
N-Channel Logic Level Enhancement Mode Power MOSFET  
BVDSS  
ID  
RDSON(max)  
30V  
11A  
12.5mΩ  
MTB13N03Q8  
Description  
The MTB13N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best  
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.  
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications  
and suited for low voltage applications such as DC/DC converters.  
Features  
Single Drive Requirement  
Low On-resistance  
Fast Switching Characteristic  
Dynamic dv/dt rating  
Repetitive Avalanche Rated  
Pb-free and Halogen-free package  
Symbol  
Outline  
MTB13N03Q8  
SOP-8  
Pin 1  
GGate  
DDrain  
SSource  
MTB13N03Q8  
CYStek Product Specification  
Spec. No. : C728Q8  
Issued Date : 2009.07.01  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/8  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
±20  
11  
Continuous Drain Current @ TC=25°C  
Continuous Drain Current @ TC=100°C  
Pulsed Drain Current  
ID  
9
A
IDM  
IAS  
44 *1  
11  
Avalanche Current  
Avalanche Energy @ L=0.1mH, ID=11A, RG=25Ω  
Repetitive Avalanche Energy @ L=0.05mH  
EAS  
EAR  
6
mJ  
3 *2  
3 *3  
1.5  
TA=25℃  
Total Power Dissipation  
PD  
W
TA=100℃  
Operating Junction and Storage Temperature Range  
Tj, Tstg  
-55~+175  
°C  
Thermal Data  
Parameter  
Thermal Resistance, Junction-to-case, max  
Thermal Resistance, Junction-to-ambient, max  
Symbol  
Rth,j-c  
Rth,j-a  
Value  
25  
50 *3  
Unit  
°C/W  
°C/W  
Note : 1. Pulse width limited by maximum junction temperature  
2. Duty cycle1%  
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad  
Characteristics (TC=25°C, unless otherwise specified)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Static  
BVDSS  
VGS(th)  
GFS  
30  
1
-
-
-
-
11  
-
-
1.5  
36  
-
-
-
-
11  
14  
-
3
-
100  
1
25  
-
12.5  
20  
V
V
S
VGS=0, ID=250μA  
VDS = VGS, ID=250μA  
VDS =5V, ID=11A  
*1  
nA  
±
±
IGSS  
VGS= 20  
VDS =24V, VGS =0  
IDSS  
μA  
VDS =20V, VGS =0, TJ=125°C  
VDS =10V, VGS =10V  
VGS =10V, ID=11A  
ID(ON) *1  
A
Ω
m
m
RDS(ON) *1  
Ω
-
VGS =4.5V, ID=9A  
Dynamic  
Ciss  
Coss  
Crss  
-
-
-
1930  
255  
150  
-
-
-
pF  
VGS=0V, VDS=15V, f=1MHz  
MTB13N03Q8  
CYStek Product Specification  
Spec. No. : C728Q8  
Issued Date : 2009.07.01  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/8  
Characteristics (TC=25°C, unless otherwise specified)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Qg (VGS=10V)  
Qg (VGS=4.5V)  
-
-
-
-
-
-
-
-
-
22  
13  
4.5  
7.2  
10  
8
28  
5
2
-
-
-
-
-
-
-
-
-
*1, 2  
*1, 2  
nC  
VDS=15V, VGS=10V, ID=11A  
Qgs  
*1, 2  
Qgd  
*1, 2  
td(ON) *1, 2  
VDS=15V, ID=1A, VGS=10V,  
tr  
*1, 2  
ns  
td(OFF) *1, 2  
RGS=2.7Ω  
tf  
*1, 2  
VGS=15mV, VDS=0V, f=1MHz  
Ω
Rg  
Source-Drain Diode  
-
-
-
-
-
-
IS  
ISM *3  
VSD *1  
trr  
Qrr  
2.5  
10  
1.2  
-
-
*1  
A
V
ns  
nC  
IF=IS, VGS=0V  
-
-
20  
10  
IF=IS, dIF/dt=100A/μs  
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%  
*2.Independent of operating temperature  
*3.Pulse width limited by maximum junction temperature.  
Ordering Information  
Device  
Package  
SOP-8  
Shipping  
Marking  
MTB13N03Q8  
2500 pcs / Tape & Reel B13N03  
(Pb-free & Halogen-free package)  
MTB13N03Q8  
CYStek Product Specification  
Spec. No. : C728Q8  
Issued Date : 2009.07.01  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/8  
Characteristic Curves  
MTB13N03Q8  
CYStek Product Specificatio
Spec. No. : C728Q8  
Issued Date : 2009.07.01  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/8  
Characteristic Curves(Cont.)  
MTB13N03Q8  
CYStek Product Specification  
Spec. No. : C728Q8  
Issued Date : 2009.07.01  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 6/8  
Reel Dimension  
Carrier Tape Dimension  
MTB13N03Q8  
CYStek Product Specification  
Spec. No. : C728Q8  
Issued Date : 2009.07.01  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 7/8  
Recommended wave soldering condition  
Product  
Peak Temperature  
Soldering Time  
5 +1/-1 seconds  
Pb-free devices  
260 +0/-5 °C  
Recommended temperature profile for IR reflow  
Profile feature  
Average ramp-up rate  
(Tsmax to Tp)  
Sn-Pb eutectic Assembly  
Pb-free Assembly  
3°C/second max.  
3°C/second max.  
Preheat  
Temperature Min(TS min)  
Temperature Max(TS max)  
Time(ts min to ts max)  
100°C  
150°C  
60-120 seconds  
150°C  
200°C  
60-180 seconds  
Time maintained above:  
Temperature (TL)  
Time (tL)  
183°C  
60-150 seconds  
240 +0/-5 °C  
217°C  
60-150 seconds  
260 +0/-5 °C  
Peak Temperature(TP)  
Time within 5°C of actual peak  
temperature(tp)  
10-30 seconds  
20-40 seconds  
Ramp down rate  
6°C/second max.  
6°C/second max.  
6 minutes max.  
8 minutes max.  
Time 25 °C to peak temperature  
Note : All temperatures refer to topside of the package, measured on the package body surface.  
MTB13N03Q8  
CYStek Product Specification  
Spec. No. : C728Q8  
Issued Date : 2009.07.01  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 8/8  
SOP-8 Dimension  
Right side View  
Top View  
A
Marking:  
G
I
C
B
H
J
Device Name  
Date Code  
D
Front View  
Part A  
E
K
Part A  
L
N
M
8-Lead SOP-8 Plastic Package  
CYStek Package Code: Q8  
O
F
*: Typical  
Inches  
DIM  
Millimeters  
Inches  
Millimeters  
DIM  
Min.  
Max.  
0.2007  
Min.  
Max.  
5.10  
4.10  
6.20  
Min.  
Max.  
Min.  
Max.  
0.28  
0.83  
0.26  
0.52  
0.50  
0.13  
0.15  
A
B
C
D
E
F
0.1850  
0.1457  
0.2283  
4.70  
3.70  
5.80  
I
J
0.0031  
0.0157  
0.0074  
0.0145  
0.0118  
0.0031  
0.0000  
0.0110  
0.0323  
0.0102  
0.0204  
0.0197  
0.0051  
0.0059  
0.08  
0.40  
0.19  
0.37  
0.30  
0.08  
0.00  
0.1614  
0.2441  
K
L
M
N
O
0.0500*  
1.27*  
0.0130  
0.1472  
0.0472  
0.1889  
0.0201  
0.1527  
0.0638  
0.2007  
0.33  
3.74  
1.20  
4.80  
0.51  
3.88  
1.62  
5.10  
G
H
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: pure tin plated  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
MTB13N03Q8  
CYStek Product Specification  

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