MTB15A04Q8-0-T3-G [CYSTEKEC]
Dual N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB15A04Q8-0-T3-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | Dual N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
Dual N-Channel Enhancement Mode Power MOSFET
BVDSS
40V
14.5A
8.8A
MTB15A04Q8
ID@ VGS=10V, TC=25°C
ID@ VGS=10V, TA=25°C
RDSON@VGS=10V, ID=8A
12.3mΩ(typ)
15.4mΩ(typ)
RDSON@VGS=4.5V, ID=4A
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Dual N-ch MOSFET package
• Pb-free lead plating & halogen-free package
Equivalent Circuit
Outline
SOP-8
MTB15A04Q8
D2
D2
D1
D1
G：Gate S：Source D：Drain
G2
S2
G1
S1
Pin 1
Ordering Information
Device
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
MTB15A04Q8-0-T3-G
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB15A04Q8
CYStek Product Specification
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
V
±20
14.5
10.3
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
ID
A
8.8 (Note 2)
7.4 (Note 2)
60 (Note 1)
3
IDM
PD
Power Dissipation for Dual Operation
W
2.4 (Note 2)
1.2 (Note 3)
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Symbol
RθJC
Value
23
Unit
50
°C/W
Thermal Resistance, Junction-to-ambient, max
RθJA
62.5 (Note 2)
125 (Note 3)
Note : 1. Pulse width limited by maximum junction temperature
2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3. Surface mounted on minimum copper pad, pulse width≤10s.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
40
1.0
-
-
2.5
-
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
VDS =10V, ID=5A
V
-
10.2
-
-
-
-
-
-
-
-
-
S
nA
*1
±
100
1
±
IGSS
VGS= 20V, VDS=0V
VDS =32V, VGS =0V
IDSS
μA
25
16
22
VDS =32V, VGS =0V, Tj=125°C
12.3
15.4
VGS =10V, ID=8A
VGS =4.5V, ID=4A
mΩ
RDS(ON) *1
Dynamic
Qg
Qgs
Qgd
td(ON) *1, 2
tr
-
-
-
-
-
-
-
15.3
2.4
3.0
-
-
-
-
-
-
-
*1, 2
*1, 2
*1, 2
nC
ns
VDS=20V, ID=8A, VGS=10V
VDS=20V, ID=8A, VGS=10V,
7.8
14.4
27.6
7.6
*1, 2
Ω
RG=3
td(OFF) *1, 2
tf
*1, 2
MTB15A04Q8
CYStek Product Specification
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Ciss
Coss
Crss
-
-
-
697
107
60
-
-
-
pF
VGS=0V, VDS=20V, f=1MHz
Source-Drain Diode
IS
-
-
-
-
-
-
-
8
24
1
-
-
*1
A
ISM *3
VSD *1
trr
0.72
8.7
3.7
V
ns
nC
IS=1A, VGS=0V
IF=8A, dIF/dt=100A/μs
Qrr
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTB15A04Q8
CYStek Product Specification
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
30
25
20
15
10
5
3.5
V
10V,9V,8V,7V,6V,5V,4.5V,4V
0.8
0.6
0.4
3V
ID=250μA,
VGS=0V
VGS=2.5V
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
VGS=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
Tj=150°C
VGS=10V
VGS=4.5V
10
0.01
0
2
4
6
8
10
0.1
1
10
100
ID, Drain Current(A)
I
DR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
80
60
40
20
0
2.8
ID=8A
2.4
2
VGS=10V, ID=8A
1.6
1.2
0.8
0.4
0
RDS(ON)@Tj=25°C : 12.3mΩ
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB15A04Q8
CYStek Product Specification
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=1mA
1000
C
oss
0.8
0.6
0.4
100
10
ID=250μA
Crss
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
10
1
10
8
6
4
2
0
VDS=15V
0.1
Ta=25°C
Pulsed
VDS=20V
ID=8A
0.01
0
4
8
12
16
20
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
10
9
8
7
6
5
4
3
2
1
0
100
RDSON
Limited
10
1
100μs
1ms
10ms
100ms
1s
0.1
TA=25°C, Tj=175°C
θ
TA=25°C, VGS=10V,
JA
DC
VGS=10V, R JA=62.5°C/W
θ
R
=62.5°C/W
Single Pulse
0.01
25
50
75
100
125
150 175
200
0.01
0.1
1
DS, Drain-Source Voltage(V)
10
100
V
Tj, Junction Temperature(°C)
MTB15A04Q8
CYStek Product Specification
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
30
300
250
200
150
100
50
VDS=10V
25
TJ(MAX)=175°C
TA=25°C
θ
R
JA=62.5°C/W
20
15
10
5
0
0
0.0001 0.001 0.01
0.1 1
Pulse Width(s)
10
100 1000
0
1
2
3
GS, Gate-Source Voltage(V)
4
5
V
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
JA
θ
θ
1.R JA(t)=r(t)*R
0.05
0.02
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
JA=62.5°C/W
θ
4.R
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB15A04Q8
CYStek Product Specification
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB15A04Q8
CYStek Product Specification
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB15A04Q8
CYStek Product Specification
Spec. No. : C055Q8
Issued Date : 2017.01.04
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOP-8 Dimension
Marking:
Device Name
Date Code
B15
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2
nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D
May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
3rd and 4th codes : prodcution serial number, 01~99
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
DIM
Inches
Min.
Millimeters
Inches
DIM
Min.
Max.
Max.
0.069
0.010
0.061
0.020
0.010
0.200
Min.
3.800
5.800
Max.
4.000
6.200
Min.
0.150
0.228
Max.
0.157
0.244
A
A1
A2
b
1.350
0.100
1.350
0.330
0.170
4.700
1.750
0.250
1.550
0.510
0.250
5.100
0.053
0.004
0.053
0.013
0.006
0.185
E
E1
e
L
θ
1.270 (BSC)
0.050 (BSC)
0.400
0
1.270
8°
0.016
0
0.050
8°
c
D
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB15A04Q8
CYStek Product Specification
相关型号：
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