MTB14P03Q8 [CYSTEKEC]

P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET


型号：	MTB14P03Q8
厂家：	CYSTECH ELECTONICS CORP.
描述：	P-CHANNEL ENHANCEMENT MODE POWER MOSFET P沟道增强型功率MOSFET
文件：	总6页 (文件大小：178K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C452Q8

Issued Date : 2009.05.13

Revised Date :

CYStech Electronics Corp.

Page No. : 1/6

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS

RDSON(max)

-30V

-12A

14mΩ

MTB14P03Q8

Description

The MTB14P03Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications

and suited for low voltage applications such as DC/DC converters.

Features

• R_DS(ON)=14m @V_GS=-10V, I_D=-12A

R_DS(ON)=21m @V_GS=-5V, I_D=-9A

• Simple drive requirement

• Low on-resistance

• Fast switching speed

• Pb-free and Halogen-free package

Equivalent Circuit

Outline

MTB14P03Q8

SOP-8

G：Gate

S：Source

D：Drain

MTB14P03Q8

CYStek Product Specification

Spec. No. : C452Q8

Issued Date : 2009.05.13

Revised Date :

CYStech Electronics Corp.

Page No. : 2/6

Absolute Maximum Ratings (TC=25°C, unless otherwise noted)

Parameter

Drain-Source Breakdown Voltage

Gate-Source Voltage

Symbol

BVDSS

VGS

Limits

Unit

-30

±25

-12

Continuous Drain Current @TC=25 °C

Continuous Drain Current @TC=100 °C

Pulsed Drain Current (Note 1)

-9

IDM

-48

Avalanche Current

IAS

-20

Avalanche Energy @ L=0.1mH, ID=-20A, RG=25Ω

EAS

°C

TA=25 °C

Power Dissipation

1.5

TA=100 °C

Operating Junction and Storage Temperature Range

Tj ; Tstg

-55~+175

Note : 1.Pulse width limited by maximum junction temperature.

Electrical Characteristics (Tc=25°C, unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

V_GS(th)

I_GSS

I_DSS

-30

-1

-12

-1.5

-3

±100

-1

-10

μA

V_GS=0, I_D=-250μA

V_DS=V_GS, I_D=-250μA

V_GS=±25V, V_DS=0

V_DS=-24V, V_GS=0

V_DS=-20V, V_GS=0, Tj=125°C

V_DS=-5V, V_GS=-10V

I_D=-12A, V_GS=-10V

I_D=-9A, V_GS=-5V

I_D(ON)

(Note 1)

R_DS(ON)

G_FS

mΩ

V_DS=-5V, I_D=-12A

(Note 1)

Dynamic

Ciss

Coss

Crss

t_d(ON)

t_r

6375

1612

1481

V_DS=-15V, V_GS=0, f=1MHz

V_DS=-15V, I_D=-1A,

(Note 1&2)

V_GS=-10V, R_G=2.7

t_d(OFF)

t_f

Qg(V_GS=10V) _{(Note 1&2)}

Qg(V_GS=5V)

V_DS=-15V, I_D=-10A,

V_GS=-10V,

(Note 1&2)

Qgs

Qgd

(Note 1&2)

MTB14P03Q8

CYStek Product Specification

Spec. No. : C452Q8

Issued Date : 2009.05.13

Revised Date :

CYStech Electronics Corp.

Page No. : 3/6

Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Source-Drain Diode

I_S

-3.6

-14.4

-1.2

I_{SM(Note 3)}

V_{SD(Note 1)}

trr

I_F=I_S, V_GS=0V

I_F=I_S, dI_F/dt=100A/μs

Qrr

Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

2.Independent of operating temperature

3.Pulse width limited by maximum junction temperature

Thermal Resistance Ratings

Thermal Resistance

Symbol

R_θJC

Typical

Maximum

Unit

Junction-to-Case

°C / W

Junction-to-Ambient (Note)

R_θJA

Note : 50°C / W when mounted on a 1 in²pad of 2 oz copper.

MTB14P03Q8

CYStek Product Specification

Spec. No. : C452Q8

Issued Date : 2009.05.13

Revised Date :

CYStech Electronics Corp.

Page No. : 4/6

Characteristic Curves

On-Region Characteristics

On-Resistance Variation with Drain Current and Gate Voltage

V_GS= - 3.5 V

2.4

V = - 10V

- 4.5V

- 6.0V

2.2

2.0

1.8

1.6

1.4

- 4.0V

- 4.0 V

- 4.5 V

- 3.5V

- 3.0V

- 5 V

- 6 V

1.2

- 7 V

- 10 V

0.8

-V - Drain-to-Source Voltage(V)

- I - Drain Current(A)

On-Resistance Variation with Temperature

I _D= - 12 A

On-Resistance Variation with Gate-to-Source Voltage

I_D=- 6 A

1.6

0.06

= - 10V

0.05

0.04

1.4

1.2

1.0

0.03

T = 125°C

0.02

0.01

0.8

0.6

T^A= 25°C

-50

-25

75 100 125

T_J- Junction Temperature (°C)

150 175

- V_GS- Gate-to-Source Voltage(V)

Transfer Characteristics

Body Diode Forward Voltage Variation with Source Current and Temperature

100

V_DS= - 5V

V_GS= 0V

25°C

- 55°C

T = 125°C

T_A= 125°C

25°C

0.1

-55°C

0.01

0.001

0.0001

1.5

2.5

3.5

0.2

0.4

0.6

0.8

1.0

1.2

-V_GS- Gate-to-Source Voltage(V)

-V - Body Diode Forward Voltage(V)

MTB14P03Q8

CYStek Product Specification

Spec. No. : C452Q8

Issued Date : 2009.05.13

Revised Date :

CYStech Electronics Corp.

Page No. : 5/6

Characteristic Curves(Cont.)

Gate Charge Characteristics

Capacitance Characteristics

7500

I_D= - 12A

f =1MHz

V^GS= 0 V

Ciss

= - 5V

- 10V

6000

4500

- 15V

3000

1500

Coss

Cr ss

Q _g- Gat e Char ge(nC)

- V_DS, Drain-t o-Source Volt age(V)

Maximum Safe OperatingArea

Single Pulse Maximum Power Dissipation

Single Pulse

100

100μs

R^DS(ON)Limit

R_θJA= 125°C/W

1ms

10ms

T = 25°C

100ms

10s

0.1

V_GS= - 10 V

Si n gl e Pu l se

_θJA= 125°C/ W

T_A= 25°C

0.01

0.1

0.001

0.01

0.1

1000

100

t ₁,Time (sec)

-V , Drain - Source Voltage(V)

Transient Thermal Response Curve

Duty Cycle = 0.5

0.2

0.1

0.05

Notes:

0.02

0.01

P_DM

0.01

1.Duty Cycle,D =

2.R_θJA=125°C/W

3.T - T = P* R_θJA(t)

Single Pulse

4.R (t)=r(t) +R

θJA

0.001

-2

-1

10^-3

100

10 ^-4

1000

t ,Time (sec)

MTB14P03Q8

CYStek Product Specification

Spec. No. : C452Q8

Issued Date : 2009.05.13

Revised Date :

CYStech Electronics Corp.

Page No. : 6/6

SOP-8 Dimension

Right side View

Top View

Marking:

Device Name

Date Code

Front View

Part A

8-Lead SOP-8 Plastic Package

CYStek Package Code: Q8

*: Typical

Inches

DIM

Millimeters

Inches

Millimeters

DIM

Min.

Max.

0.2007

Min.

Max.

5.10

3.95

6.20

1.32

0.47

3.88

1.65

5.10

Min.

Max.

Min.

Max.

0.20

0.70

0.25

0.52

0.50

0.13

0.15

0.1909

0.1515

0.2283

0.0480

0.0145

0.1472

0.0570

0.1889

4.85

3.85

5.80

1.22

0.37

3.74

1.45

4.80

0.0019

0.0118

0.0074

0.0145

0.0118

0.0031

0.0000

0.0078

0.0275

0.0098

0.0204

0.0197

0.0051

0.0059

0.05

0.30

0.19

0.37

0.30

0.08

0.00

0.1555

0.2441

0.0519

0.0185

0.1527

0.0649

0.2007

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: pure tin plated

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

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MTB14P03Q8

CYStek Product Specification

MTB14P03Q8 [CYSTEKEC]

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