MTB15A04DH8-0-T6-G [CYSTEKEC]
Dual N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB15A04DH8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | Dual N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总11页 (文件大小：704K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 1/ 11
CYStech Electronics Corp.
Dual N-Channel Enhancement Mode Power MOSFET
BVDSS
MTB15A04DH8
ID@VGS=10V, TC=25°C
40V
26A
16.4A
7.0A
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
5.6A
ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=8A
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
11.3mΩ(typ)
14.2mΩ(typ)
RDS(ON)@VGS=4.5V, ID=4A
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package
Equivalent Circuit
Outline
DFN5×6
MTB15A04DH8
Pin 1
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
Package
Shipping
DFN 5 ×6
MTB15A04DH8-0-T6-G
3000 pcs / tape & reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 2/ 11
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
±20
26
14.4
7.0
5.6
104
20
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Continuous Drain Current @TA=25°C, VGS=10V
Continuous Drain Current @TA=70°C, VGS=10V
Pulsed Drain Current @ VGS=10V
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
ID
IDSM
A
IDM
IAS
Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy @ L=2mH, ID=14Amps,
VDD=50V
Repetitive Avalanche Energy
EAS
EAR
PD
196
(Note 5)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
mJ
2.1
21
8.4
1.5
1.0
TC=25°C
TC=100°C
TA=25°C
Power Dissipation
W
PDSM
TA=70°C
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
Tj, Tstg -55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 4)
Symbol
RθJC
RθJA
Value
6
85
Unit
°C/W
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The value in any given application depends on the user’s specific board design. The
°
power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150 C.
°
.
3 Ratings are based on low frequency and low duty cycles to keep initial TJ=25 C.
4. When mounted on1 in² copper pad of FR-4 board ; 125°C/W when mounted on minimum copper pad.
5. 100% tested by conditions of L=0.1mH, IAS=15A, VGS=10V, VDD=25V.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
∆BVDSS/∆Tj
VGS(th)
40
-
-
-
2.5
-
V
V/°C
V
VGS=0V, ID=250μA
-
1.0
-
0.03
-
10.5
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=5A
*GFS
S
nA
±
±
IGSS
-
-
-
-
-
-
100
1
VGS= 20V
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=85°C
IDSS
μA
25
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 3/ 11
CYStech Electronics Corp.
-
-
11.3
14.2
15
20
VGS =10V, ID=8A
VGS =4.5V, ID=4A
Ω
m
*RDS(ON)
Dynamic
*Qg
-
-
-
-
-
-
-
-
-
-
-
14.7
2.5
2.8
7.6
16
27.6
7
656
97
22.1
-
-
11.4
24
41.4
10.5
984
146
74
nC
VDS=20V, ID=8A, VGS=10V
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Ω
ns
VDS=15V, ID=8A, VGS=10V, RG=1
pF
VGS=0V, VDS=30V, f=1MHz
f=1MHz
49
2.5
Ω
Rg
-
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
26
104
1
-
-
A
0.72
8.2
3.2
V
ns
nC
IS=1A, VGS=0V
VGS=0V, IF=8A, dIF/dt=100A/μs
*Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
unit : mm
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 4/ 11
CYStech Electronics Corp.
Recommended Stencil Design
Note : 1. Stencil thickness 5 mil (0.127mm)
2. May need to be adjusted to specific requirements.
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 5/ 11
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
100
10V, 9V, 8V,7V,6V
5V
80
60
40
20
0
4.5V
4
V
3.5
V
I =250 A,
μ
GS=0V
D
VGS=2.5V
3
V
V
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
10
1
1.2
1.0
0.8
0.6
0.4
0.2
Tj=25°C
VGS=4.5V
VGS=10V
Tj=150°C
0
4
8
12
16
20
0.01
0.1
1
10
100
IDR, Reverse Drain Current(A)
ID, Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=10V, ID=8A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ID=8A
80
60
40
20
0
RDS(ON)@Tj=25°C : 11.3mΩ typ
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
2
4
6
VGS, Gate-Source Voltage(V)
8
10
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 6/ 11
CYStech Electronics Corp.
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1000
1.4
1.2
1
Ciss
ID=1mA
C
oss
100
0.8
0.6
0.4
I =250 A
μ
D
Crss
10
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
VDS, Drain-Source Voltage(V)
25
30
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
8
6
4
2
0
10
1
VDS=15V
VDS=20V
VDS=10V
Pulsed
0.1
0.01
Ta=25°C
ID=8A
0
2
4
6
8
10
12
14
16
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
8
7
6
5
4
3
2
1
0
1000
100
10
RDS(ON)
Limited
s
100
μ
1ms
1
10ms
100ms
1s
TA=25°C, Tj=150°C,
JA
0.1
0.01
JA
θ
VGS=10V, R =85°C/W
θ
VGS=10V,R =85°C/W,
Single Pulse
DC
25
50
75
100
125
150
175
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 7/ 11
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Maximum Power Dissipation
200
180
160
140
120
100
80
100
80
60
40
20
0
VDS=10V
TJ(MAX)=150°C
TA=25°C
θ
R
JA=85°C/W
60
40
20
0
0
2
4
6
GS, Gate-Source Voltage(V)
8
10
0.0001
0.001
0.01
0.1
1
10
V
Pulse Width(s)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
30
25
20
15
10
5
1000
100
10
RDSON
Limited
100μs
1ms
10ms
1
100ms
JC
θ
VGS=-10V, R =6°C/W
TC=25°C, VGS=10V,Tj=150°
C
DC
0
0.1
25
50
75
100
125
150
175
0.01
0.1
1
10
100
TC, Case Temperature(°C)
VDS, Drain-Source Voltage(V)
Single Pulse Maximum Power Dissipation
400
350
300
250
200
150
100
50
TJ(MAX)=150°C
TC=25°C
θ
R
JC=6°C/W
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 8/ 11
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
D=0.5
0.2
JA
θ
θ
1.R JA(t)=r(t)*R
0.1
0.1
1
2
2.Duty Factor, D=t /t
0.05
JM
A
DM
JA
3.T -T =P *Rθ (t)
JA=85 C/W
θ
4.R
°
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
JC
θ
1.RθJC(t)=r(t)*R
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.05
0.02
0.01
JC
θ
4.R =6 °C/W
0.1
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 9/ 11
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
Pin #1
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 10/ 11
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
Time 25 °C to peak temperature
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTB15A04DH8
CYStek Product Specification
Spec. No. : C450H8
Issued Date : 2017.01.16
Revised Date : 2017.02.10
Page No. : 11/ 11
CYStech Electronics Corp.
DFN5×6 Dimension
Marking:
Device Name
Date Code
B15
A04
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
DIM
Inches
Millimeters
Inches
Min.
0.223
0.047
0.014
DIM
Min.
Max.
Min.
Max.
Min.
Max.
5.826
1.390
0.450
Max.
0.229
0.055
0.018
A
0.900
1.000
0.035
0.039
E2
k
b
e
L
L1
H
θ
5.674
1.190
0.350
A3
D
E
D1
D2
E1
D3
0.254 REF
0.010 REF
4.944
5.974
1.470
0.470
3.375
4.824
5.096
6.126
1.870
0.870
3.575
4.976
0.195
0.235
0.058
0.019
0.133
0.190
0.201
0.241
0.074
0.034
0.141
0.196
1.270 TYP
0.050 TYP
0.559
0.424
0.574
10°
0.711
0.576
0.726
12°
0.022
0.017
0.023
10°
0.028
0.023
0.029
12°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB15A04DH8
CYStek Product Specification
相关型号：
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